1. Features
•Low-voltage and Standard-voltage Operation
–2.7(V
CC =2.7Vto5.5V)
–1.8(V
CC =1.8Vto5.5V)
•User-selectable Internal Organization
– 2K:256x8or128x16
– 4K:512x8or256x16
•Three-wire Serial Interface
•Sequential Read Operation
•2 MHz Clock Rate (5V)
•Self-timed Write Cycle (10 ms Max)
•High Reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
•Automotive Devices Available
•8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead Ultra Thin mini-MAP
(MLP 2x3), 8-lead Ultra Lead Frame Land Grid Array (ULA), 8-lead TSSOP and 8-ball
dBGA2 Packages
2. Description
The AT93C56A/66A provides 2048/4096 bits of serial electrically erasable program-
mable read-only memory (EEPROM) organized as 128/256 words of 16 bits each
(when the ORG pin is connected to VCC) and 256/512 words of 8 bits each (when the
ORG pin is tied to ground). The device is optimized for use in many industrial and
commercial applications where low-power and low-voltage operations are essential.
The AT93C56A/66A is available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-
lead EIAJ SOIC, 8-lead Ultra Thin mini-MAP (MLP 2x3), 8-lead Ultra Lead Frame Land
Grid Array (ULA), 8-lead TSSOP, and 8-ball dBGA2 packages.
The AT93C56A/66A is enabled through the Chip Select pin (CS) and accessed via a
three-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift
Clock (SK). Upon receiving a read instruction at DI, the address is decoded and the
data is clocked out serially on the data output pin DO. The write cycle is completely
self-timed and no separate erase cycle is required before write. The write cycle is only
enabled when the part is in the Erase/Write Enable State. When CS is brought “high”
following the initiation of a write cycle, the DO pin outputs the Ready/Busy status of
the part.
The AT93C56A/66A is available in 2.7V to 5.5V and 1.8V to 5.5V versions.
Three-wire
Serial
EEPROM
2K (256 x 8 or 128 x 16)
4K (512 x 8 or 256 x 16)
AT93C56A
AT93C66A
Not Recommended
for New Design.
Replaced by
AT93C56B or
AT93C66B.
3378O–SEEPR–11/09
2
3378O–SEEPR–11/09
AT93C56A/66A
Table 2-1. Pin Configurations
Pin Name Function
CS Chip Select
SK Serial Data Clock
DI Serial Data Input
DO Serial Data Output
GND Ground
VCC Power Supply
ORG Internal Organization
NC No Connect
3. Absolute Maximum Ratings*
Operating Temperature 55C to +125C*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only, and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature 65C to +150C
Voltage on Any Pin
with Respect to Ground 1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
VCC
NC
ORG
GND
CS
SK
DI
DO
1
2
3
4
8
7
6
5
8-ball dBGA2
Bottom view
1
2
3
4
8
7
6
5
CS
SK
DI
DO
VCC
NC
ORG
GND
8-lead SOIC
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
CS
SK
DI
DO
8-lead Ultra Thin mini-MAP (MLP 2x3)
Bottom view
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
CS
SK
DI
DO
8-lead Ultra Lead Frame
Land Grid Array (ULA)
Bottom view
1
2
3
4
8
7
6
5
CS
SK
DI
DO
VCC
NC
ORG
GND
8-lead PDIP
1
2
3
4
8
7
6
5
CS
SK
DI
DO
VCC
NC
ORG
GND
8-lead TSSOP
3
3378O–SEEPR–11/09
AT93C56A/66A
Figure 3-1. Block Diagram
Note: When the ORG pin is connected to VCC, the x 16 organization is selected. When it is connected to ground, the x 8 organization
is selected. If the ORG pin is left unconnected and the application does not load the input beyond the capability of the internal 1
Meg ohm pullup, then the x 16 organization is selected.
4
3378O–SEEPR–11/09
AT93C56A/66A
Note: 1. This parameter is characterized and is not 100% tested.
Note: 1. VIL min and VIH max are reference only and are not tested.
Table 3-1. Pin Capacitance(Note:)
Applicable over recommended operating range from TA=25C,f=1.0MHz, VCC = +5.0V (unless otherwise noted)
Symbol Test Conditions Max Units Conditions
COUT Output Capacitance (DO) 5 pF VOUT =0V
CIN Input Capacitance (CS, SK, DI) 5 pF VIN =0V
Table 3-2. DC Characteristics
Applicable over recommended operating range from: TAI =40Cto+85C, VCC = +1.8V to +5.5V,
VCC = +1.8V to +5.5V (unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
VCC1 Supply Voltage 1.8 5.5 V
VCC2 Supply Voltage 2.7 5.5 V
VCC3 Supply Voltage 4.5 5.5 V
ICC Supply Current VCC = 5.0V READ at 1.0 MHz 0.5 2.0 mA
WRITE at 1.0 MHz 0.5 2.0 mA
ISB1 Standby Current VCC = 1.8V CS = 0V 0.4 1.0 µA
ISB2 Standby Current VCC = 2.7V CS = 0V 6.0 10.0 µA
ISB3 Standby Current VCC = 5.0V CS = 0V 10.0 15.0 µA
IIL Input Leakage VIN =0VtoV
CC 0.1 3.0 µA
IOL Output Leakage VIN =0VtoV
CC 0.1 3.0 µA
VIL1(Note:)
VIH1(Note:) Input Low Voltage
Input High Voltage 2.7V VCC 5.5V 0.6
2.0
0.8
VCC +1 V
VIL2(Note:)
VIH2(Note:) Input Low Voltage
Input High Voltage 1.8V VCC 2.7V 0.6
VCC x0.7
VCC x0.3
VCC +1 V
VOL1
VOH1
Output Low Voltage
Output High Voltage 2.7V VCC 5.5V IOL = 2.1 mA 0.4 V
IOH =0.4 mA 2.4 V
VOL2
VOH2
Output Low Voltage
Output High Voltage 1.8V VCC 2.7V IOL = 0.15 mA 0.2 V
IOH =100 µA VCC 0.2 V
5
3378O–SEEPR–11/09
AT93C56A/66A
Note: 1. This parameter is characterized and is not 100% tested.
Table 3-3. AC Characteristics
Applicable over recommended operating range from TAI =40°C to + 85°C, VCC = As Specified,
CL = 1 TTL Gate and 100 pF (unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Units
fSK
SK Clock
Frequency
4.5V VCC 5.5V
2.7V VCC 5.5V
1.8V VCC 5.5V
0
0
0
2
1
0.25
MHz
tSKH SK High Time 2.7V VCC 5.5V
1.8V VCC 5.5V
250
1000 ns
tSKL SK Low Time 2.7V VCC 5.5V
1.8V VCC 5.5V
250
1000 ns
tCS
Minimum CS
Low Time
2.7V VCC 5.5V
1.8V VCC 5.5V
250
1000 ns
tCSS CS Setup Time Relative to SK 2.7V VCC 5.5V
1.8V VCC 5.5V
50
200 ns
tDIS DI Setup Time Relative to SK 2.7V VCC 5.5V
1.8V VCC 5.5V
100
400 ns
tCSH CS Hold Time Relative to SK 0 ns
tDIH DI Hold Time Relative to SK 2.7V VCC 5.5V
1.8V VCC 5.5V
100
400 ns
tPD1 Output Delay to “1” AC Test 2.7V VCC 5.5V
1.8V VCC 5.5V
250
1000 ns
tPD0 Output Delay to “0” AC Test 2.7V VCC 5.5V
1.8V VCC 5.5V
250
1000 ns
tSV CS to Status Valid AC Test 2.7V VCC 5.5V
1.8V VCC 5.5V
250
1000 ns
tDF
CS to DO in High
Impedance
AC Test
CS = VIL
2.7V VCC 5.5V
1.8V VCC 5.5V
150
400 ns
tWP Write Cycle Time 1.8V VCC 5.5V 0.1 3 10 ms
Endurance(Note:) 5.0V, 25°C 1M Write Cycles
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3378O–SEEPR–11/09
AT93C56A/66A
Note: The X’s in the address field represent don’t care values and must be clocked.
Table 3-4. Instruction Set for the AT93C56A and AT93C66A
Instruction SB
Op
Code
Address Data
Commentsx8 x16 x8 x16
READ 1 10 A8–A
0A7–A
0
Reads data stored in memory, at
specified address.
EWEN 1 00 11XXXXXXX 11XXXXXX Write enable must precede all
programming modes.
ERASE 1 11 A8–A
0A7–A
0Erases memory location An–A
0.
WRITE 1 01 A8–A
0A7–A
0D7–D
0D15 –D
0Writes memory location An–A
0.
ERAL 1 00 10XXXXXXX 10XXXXXX Erases all memory locations. Valid
only at VCC =4.5Vto5.5V.
WRAL 1 00 01XXXXXXX 01XXXXXX D7–D
0D15 –D
0
Writes all memory locations. Valid
only at VCC = 5.0V ±10% and Disable
Register cleared.
EWDS 1 00 00XXXXXXX 00XXXXXX Disables all programming instructions.
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3378O–SEEPR–11/09
AT93C56A/66A
4. Functional Description
The AT93C56A/66A is accessed via a simple and versatile three-wire serial communication
interface. Device operation is controlled by seven instructions issued by the host processor. A
valid instruction starts with a rising edge of CS and consists of a Start Bit (logic “1”) followed
by the appropriate Op Code and the desired memory address location.
READ (READ): The Read (READ) instruction contains the address code for the memory loca-
tion to be read. After the instruction and address are decoded, data from the selected memory
location is available at the serial output pin DO. Output data changes are synchronized with the
rising edges of serial clock SK. It should be noted that a dummy bit (logic “0”) precedes the 8- or
16-bit data output string. The AT93C56A/66A supports sequential read operations. The device
will automatically increment the internal address pointer and clock out the next memory location
as long as Chip Select (CS) is held high. In this case, the dummy bit (logic “0”) will not be
clocked out between memory locations, thus allowing for a continuous stream of data to be read.
ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the
Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable (EWEN)
instruction must be executed first before any programming instructions can be carried out.
Please note that once in the EWEN state, programming remains enabled until an EWDS instruc-
tion is executed or VCC power is removed from the part.
ERASE (ERASE): The Erase instruction programs all bits in the specified memory location to
the logical “1” state. The self-timed erase cycle starts once the ERASE instruction and address
are decoded. The DO pin outputs the Ready/Busy status of the part if CS is brought high after
being kept low for a minimum of 250 ns (tCS). A logic “1” at pin DO indicates that the selected
memory location has been erased, and the part is ready for another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be written
into the specified memory location. The self-timed programming cycle tWP starts after the last bit
of data is received at serial data input pin DI. The DO pin outputs the Ready/Busy status of the
part if CS is brought high after being kept low for a minimum of 250 ns (tCS). A logic “0” at DO
indicates that programming is still in progress. A logic “1” indicates that the memory location at
the specified address has been written with the data pattern contained in the instruction and the
part is ready for further instructions. A READY/BUSY status cannot be obtained if the CS is
brought high after the end of the self-timed programming cycle tWP.
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array
to the logic “1” state and is primarily used for testing purposes. The DO pin outputs the
Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns
(tCS). The ERAL instruction is valid only at VCC = 5.0V 10%.
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the
data patterns specified in the instruction. The DO pin outputs the Ready/Busy status of the part if
CS is brought high after being kept low for a minimum of 250 ns (tCS). The WRAL instruction is
valid only at VCC =5.0V±10%.
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write
Disable (EWDS) instruction disables all programming modes and should be executed after all
programming operations. The operation of the READ instruction is independent of both the
EWEN and EWDS instructions and can be executed at any time.
8
3378O–SEEPR–11/09
AT93C56A/66A
5. Timing Diagrams
Figure 5-1. Synchronous Data Timing
Note: 1. This is the minimum SK period.
Notes: 1. A8is a DON’T CARE value, but the extra clock is required.
2. A7is a DON’T CARE value, but the extra clock is required.
Figure 5-2. READ Timing
Table 5-1. Organization Key for Timing Diagrams
I/O
AT93C56A (2K) AT93C66A (4K)
x8 x16 x8 x16
ANA8(1) A7(2) A8A7
DND7D15 D7D15
High Impedance
t
CS
CS
SK
DI
DO
9
3378O–SEEPR–11/09
AT93C56A/66A
Figure 5-3. EWEN Timing
Figure 5-4. EWDS Timing
Figure 5-5. WRITE Timing
CS
11 ...
001
SK
DI
t
CS
CS t
CS
SK
DI 1 0 000 ...
SK
CS t
CS
t
WP
11
A
N
D
N
0A0D0
... ...
DI
DO HIGH IMPEDANCE BUSY READY
12
3378O–SEEPR–11/09
AT93C56A/66A
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics table.
2. “U” designates Green package + RoHS compliant.
3. “H” designates Green package + RoHS compliant, with NiPdAu Lead Finish.
4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial Marketing.
6. AT93C56A Ordering Information(1)
Ordering Code Package Operation Range
AT93C56A-10PU-2.7(2)
AT93C56A-10PU-1.8(2)
AT93C56A-10SU-2.7(2)
AT93C56A-10SU-1.8(2)
AT93C56AW-10SU-2.7(2)
AT93C56AW-10SU-1.8(2)
AT93C56A-10TU-2.7(2)
AT93C56A-10TU-1.8(2)
AT93C56AU3-10UU-1.8(2)
AT93C56AD3-10DH-1.8(3)
AT93C56AY1-10YU-1.8(2) (Not recommended for new design)
AT93C56AY6-10YH-1.8(3)
8P3
8P3
8S1
8S1
8S2
8S2
8A2
8A2
8U3-1
8D3
8Y1
8Y6
Lead-free/Halogen-free/
Industrial Temperature
(40Cto85C)
AT93C56A-W1.8-11(4) Die Sales Industrial Temperature
(40Cto85C)
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8S2 8-lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC)
8A2 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
8U3-1 8-ball, die Ball Grid Array Package (dBGA2)
8Y1 8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8Y6 8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead package (DFN), (MLP 2x3 mm)
8D3 8-lead, 1.80 mm x 2.20 mm Body, Ultra Lead Frame Land Grid Array (ULA)
Options
2.7 Low-voltage (2.7V to 5.5V)
1.8 Low-voltage (1.8V to 5.5V)
13
3378O–SEEPR–11/09
AT93C56A/66A
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics table.
2. “U” designates Green package + RoHS compliant.
3. “H” designates Green package + RoHS compliant, with NiPdAu Lead Finish.
4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
7. AT93C66A Ordering Information(1)
Ordering Code Package Operation Range
AT93C66A-10PU-2.7(2)
AT93C66A-10PU-1.8(2)
AT93C66A-10SU-2.7(2)
AT93C66A-10SU-1.8(2)
AT93C66AW-10SU-2.7(2)
AT93C66AW-10SU-1.8(2)
AT93C66A-10TU-2.7(2)
AT93C66A-10TU-1.8(2)
AT93C66AU3-10UU-1.8(2)
AT93C66AD3-10DH-1.8(3)
AT93C66AY1-10YU-1.8(2) (Not recommended for new design)
AT93C66AY6-10YH-1.8(3)
8P3
8P3
8S1
8S1
8S2
8S2
8A2
8A2
8U3-1
8D3
8Y1
8Y6
Lead-free/Halogen-free/
Industrial Temperature
(40Cto85C)
AT93C66A-W1.8-11(4) Die Sale Industrial Temperature
(40Cto85C)
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8S2 8-lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC)
8A2 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
8U3-1 8-ball, die Ball Grid Array Package (dBGA2)
8Y1 8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8Y6 8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead package (DFN), (MLP 2x3 mm)
8D3 8-lead, 1.80 mm x 2.20 mm Body, Ultra Lead Frame Land Grid Array (ULA)
Options
2.7 Low-voltage (2.7V to 5.5V)
1.8 Low-voltage (1.8V to 5.5V)
14
3378O–SEEPR–11/09
AT93C56A/66A
8. Packaging Information
8.1 8P3 – PDIP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
01/09/02
8P3 B
D
D1
E
E1
e
L
b2
b
A2 A
1
N
eA
c
b3
4 PLCS
Top View
Side View
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
SYMBOL MIN NOM MAX NOTE
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
A 0.210 2
A2 0.115 0.130 0.195
b 0.014 0.018 0.022 5
b2 0.045 0.060 0.070 6
b3 0.030 0.039 0.045 6
c 0.008 0.010 0.014
D 0.355 0.365 0.400 3
D1 0.005 3
E 0.300 0.310 0.325 4
E1 0.240 0.250 0.280 3
e 0.100 BSC
eA 0.300 BSC 4
L 0.115 0.130 0.150 2
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3378O–SEEPR–11/09
AT93C56A/66A
8.2 8S1 – JEDEC SOIC
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE DRAWING NO.
R
REV.
Note:
10/7/03
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC) 8S1 B
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A1 0.10 – 0.25
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
A 1.35 – 1.75
b 0.31 – 0.51
C 0.17 – 0.25
D 4.80 – 5.00
E1 3.81 – 3.99
E 5.79 – 6.20
e 1.27 BSC
L 0.40 – 1.27
∅ 0˚ – 8˚
∅
Top View
End View
Side View
eB
D
A
A1
N
E
1
C
E1
L
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3378O–SEEPR–11/09
AT93C56A/66A
8.3 8S2 – EIAJ SOIC
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
10/7/03
8S2 C
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs are not included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b and C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/−0.005 mm.
A 1.70 2.16
A1 0.05 0.25
b 0.35 0.48 5
C 0.15 0.35 5
D 5.13 5.35
E1 5.18 5.40 2, 3
E 7.70 8.26
L 0.51 0.85
∅
0˚ 8˚
e 1.27 BSC 4
End View
Side View
eb
A
A1
D
E
N
1
C
E1
∅
L
Top View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
θ
θ
1
1
N
E
C
C
E1
E
A
b
L
A1
e
D
TOP VIEW
END VIEW
SIDE VIEW
A
A1
b
C
D
E1
E
L
θ
e
1.70
0.05
0.35
0.15
5.13
5.18
7.70
0.51
0˚
2.16
0.25
0.48
0.35
5.35
5.40
8.26
0.85
8˚
5
5
2, 3
4
1.27 BSC
DRAWING NO.
2325 Orchard Parkway
San Jose, CA 95131
R
REV.
8S2 D
04/07/06
TITLE
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
17
3378O–SEEPR–11/09
AT93C56A/66A
8.4 8Y6 – MiniMap (MLP 2x3)
TITLE DRAWING NO. GPC REV.
Package Drawing Contact:
packagedrawings@atmel.com 8Y6YNZ E
8Y6, 8-lead 2.0x3.0 mm Body, 0.50 mm Pitch,
UltraThin Mini-MAP, Dual No Lead Package
(Sawn)(UDFN)
11/21/08
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions,
tolerances, datums, etc.
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.
3. Soldering the large thermal pad is optional, but not recommended. No electrical connection is accomplished to the
device through this pad, so if soldered it should be tied to ground
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
D 2.00 BSC
E 3.00 BSC
D2 1.40 1.50 1.60
E2 - - 1.40
A - - 0.60
A1 0.0 0.02 0.05
A2 - - 0.55
A3 0.20 REF
L 0.20 0.30 0.40
e 0.50 BSC
b 0.20 0.25 0.30 2
A2
A2
b
(8X)
(8X)
Pin 1 ID
Pin 1 ID
Pin 1
Pin 1
Index
Index
Area
Area
A1
A1
A3
A3
D
E
A
L (8X)
L (8X)
e (6X)
e (6X)
1.50 REF.
1.50 REF.
D2
D2
E2
E2
18
3378O–SEEPR–11/09
AT93C56A/66A
8.5 8Y1 – Map
A – – 0.90
A1 0.00 – 0.05
D 4.70 4.90 5.10
E 2.80 3.00 3.20
D1 0.85 1.00 1.15
E1 0.85 1.00 1.15
b 0.25 0.30 0.35
e 0.65 TYP
L 0.50 0.60 0.70
PIN 1 INDEX AREA
D
E
A
A1 b
876
e
5
L
D1
E1
PIN 1 INDEX AREA
1234
A
Top V i ew End View Bottom View
Side View
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package
(MAP) Y1 C
8Y1
2/28/03
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN NOM MAX
NOTE
19
3378O–SEEPR–11/09
AT93C56A/66A
8.6 8A2 – TSSOP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
5/30/02
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
D 2.90 3.00 3.10 2, 5
E 6.40 BSC
E1 4.30 4.40 4.50 3, 5
A – – 1.20
A2 0.80 1.00 1.05
b 0.19 – 0.30 4
e 0.65 BSC
L 0.45 0.60 0.75
L1 1.00 REF
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
8A2 B
Side View
End View
Top View
A2
A
L
L1
D
123
E1
N
b
Pin 1 indicator
this corner
E
e
20
3378O–SEEPR–11/09
AT93C56A/66A
8.7 8U3-1 – dBGA2
TITLE DRAWING NO.
R
REV.
1150E Cheyenne Mt. Blvd
Colorado Springs, CO 80906 PO8U3-1 b
5/3/05
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A 0.713 0.79 0.85
A1 0.09 0.14 0.19
A2 0.40 0.45 0.50
b 0.20 0.25 0.30 2
D 1.50 BSC
E 2.00 BSC
e 0.50 BSC
e1 0.25 REF
d 1.00 BSC
d1 0.25 REF
8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
b
D
E
A
A
2
A
1
Bottom View
8 Solder Balls
Side View
Top View
PIN 1 BALL PAD CORNER
PIN 1 BALL PAD CORNER
1. This drawing is for general information only.
2. Dimension ‘b’ is measured at maximum solder ball diameter
4
5
31
e
2
67
8
d
(e1)
(d1)
1.
21
3378O–SEEPR–11/09
AT93C56A/66A
8.8 8D3 - ULA
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE DRAWING NO.
R
REV.
8D3, 8-lead (1.80 x 2.20 mm Body) Ultra Leadframe
Land Grid Array (ULLGA) D3 0
8D3
11/15/05
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN NOM MAX NOTE
A – – 0.40
A1 0.00 – 0.05
D 1.70 1.80 1.90
E 2.10 2.20 2.30
b 0.15 0.20 0.25
e 0.40 TYP
e1 1.20 REF
L 0.25 0.30 0.35
0.10
0.15
b
657
4
3
E
D
8
12
PIN #1 ID
TOP VIEW
L
b
A1
Ae
PIN #1 ID
SIDE VIEW BOTTOM VIEW
e1
22
3378O–SEEPR–11/09
AT93C56A/66A
9. Revision History
Revision No. Date Comments
3378O 07/2012 Not recommended for new design. Use AT93C56B/66B.
3378O 11/2009 Added 8S2 package drawing
3378N 1/2009 Updated 8Y6 package drawing
3378M 7/2008 Updated Ordering Codes
3378L 11/2007 Updated to new template
Added ULA package offering
3378K 12/2006
Removed DC/Don’t Connect and replaced with NC/No Conenct
Adjusted size of Block diagram on pg. 2
Made all diagrams on pages 6-9 consistently the same size
Corrected 8U3-1
3378O–SEEPR–11/09
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