SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
* Excellent hFE characteristics at IC=100mA
* Low saturation voltages
COMPLEMENTARY TYPE FMMT458
PARTMARKING DETAIL 558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -400 V
Collector-Emitter Voltage VCEO -400 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -500 mA
Continuous Collector Current IC-150 mA
Base Current IB-200 mA
Power Dissipation Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -400 V IC
=-100µA
Collector-Emitter Breakdown
Voltage
VBR(CEO) -400 V IC
=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA
Collector Cut-Off Current ICBO
; ICES -100 nA VCB
=-320V; V
CE
=320V
Emitter Cut-Off Current IEBO -100 nA VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat) -0.2
-0.5
V
V
IC
=-20mA, IB
=-2mA *
IC
=-50mA, IB
=-6mA *
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 V IC
=-50mA, IB
=-5mA *
Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE=-10V *
Static Forward Current Transfer
Ratio
hFE 100
100
15
300
IC
=-1mA, VCE =-10V
IC
=-50mA, VCE =-10V *
IC
=-100mA, VCE =-10V*
Transition Frequency fT50 MHz IC
=-10mA, VCE =-20V
f=20MHz
Collector-Base Breakdown
Voltage
Cobo 5pFV
CB
=-20V, f=1MHz
Switching times ton
toff
95
1600
ns
ns
IC
=-50mA, VCE =-100V
IB1=5mA, IB2=-10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FMMT558
3 - 134
C
B
E
3 - 133
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
-55°C
+25°C
+100°C
+175°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain
V - (Volts)
V - (Volts)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
h- Typical Gain
0.001 0.001
0.001 0.001
0.001
I
C
/I
B
=20
-55°C
+25°C
+100°C
+175°C
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V 100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0.01
1000V
0.001
FMMT558
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
* Excellent hFE characteristics at IC=100mA
* Low saturation voltages
COMPLEMENTARY TYPE FMMT458
PARTMARKING DETAIL 558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -400 V
Collector-Emitter Voltage VCEO -400 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -500 mA
Continuous Collector Current IC-150 mA
Base Current IB-200 mA
Power Dissipation Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -400 V IC
=-100µA
Collector-Emitter Breakdown
Voltage
VBR(CEO) -400 V IC
=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA
Collector Cut-Off Current ICBO
; ICES -100 nA VCB
=-320V; V
CE
=320V
Emitter Cut-Off Current IEBO -100 nA VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat) -0.2
-0.5
V
V
IC
=-20mA, IB
=-2mA *
IC
=-50mA, IB
=-6mA *
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 V IC
=-50mA, IB
=-5mA *
Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE=-10V *
Static Forward Current Transfer
Ratio
hFE 100
100
15
300
IC
=-1mA, VCE =-10V
IC
=-50mA, VCE =-10V *
IC
=-100mA, VCE =-10V*
Transition Frequency fT50 MHz IC
=-10mA, VCE =-20V
f=20MHz
Collector-Base Breakdown
Voltage
Cobo 5pFV
CB
=-20V, f=1MHz
Switching times ton
toff
95
1600
ns
ns
IC
=-50mA, VCE =-100V
IB1=5mA, IB2=-10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FMMT558
3 - 134
C
B
E
3 - 133
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
-55°C
+25°C
+100°C
+175°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain
V - (Volts)
V - (Volts)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
h- Typical Gain
0.001 0.001
0.001 0.001
0.001
I
C
/I
B
=20
-55°C
+25°C
+100°C
+175°C
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V 100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0.01
1000V
0.001
FMMT558
