(SEE REVERSE SIDE)
R0
BF457
BF458
BF459
NPN SILICON
HIGH VOLTAGE POWER TRANSISTORS
JEDEC TO-126 CASE
DATA SHEE
T
DESCRIPTION: The CENTRAL SEMICONDUCTOR BF457 series types are silicon NPN plastic transistors manufactured
by the epitaxial planar process designed for horizontal driver, high voltage amplifier, and switching circuits.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL BF457 BF458 BF459 UNITS
Collector-Base Voltage VCBO 160 250 300 V
Collector-Emitter Voltage VCEO 160 250 300 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 100 mA
Peak Collector Current ICM 300 mA
Base Current IB 50 mA
Peak Base Current IBM 100 mA
Power Dissipation (TC=45°C) PD
10 W
Power Dissipation PD 1.2 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance ΘJC 10 °C/W
Thermal Resistance ΘJA 104 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
BF457 BF458 BF459
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICBO V
CB=100V 50 nA
ICBO V
CB=200V 50 nA
ICBO V
CB=250V 50 nA
IEBO V
EB=3.0V 50 50 50 nA
BVCBO I C=100µA 160 250 300 V
BVCEO I C=10mA 160 250 300 V
BVEBO IC=1.0mA 5.0 5.0 5.0 V
VCE(SAT) IC=30mA, IB=6.0mA 1.0 1.0 1.0 V
hFE V
CE=10V, IC=30mA 25 25 25
fT V
CE=10V, IC=15mA, f=100MHz 90 TYP 90 TYP 90 TYP MHz
Cob V
CB=30V, IE=0, f=1.0MHz 5.5 TYP 5.5 TYP 5.5 TYP pF
Cre V
CE=30V, IC=1.0mA, f=1.0MHz 4.2 TYP 4.2 TYP 4.2 TYP pF
BF457 SERIES NPN HIGH VOLTAGE TRANSISTORS
TO-126 PACKAGE - MECHANICAL OUTLINE
D
G
H
L
K
F
E
J
A
B
C
BACKSIDE
R2
123
N
M
Lead Code
1) Emitter
2) Collector
3) Base
Mounting Pad is common to Pin 2.
MINMAXMINMAX
A 0.094 0.106 2.40 2.70
B
C 0.015 0.030 0.38 0.75
D 0.291 0.307 7.40 7.80
E
F 0.118 0.126 3.00 3.20
G 0.413 0.435 10.50 11.05
H
J 0.025 0.035 0.64 0.90
K
L
M 0.045 0.055 1.14 1.39
N
TO-126 (REV:R2)
2.100.083
DIMENSIONS
SYMBOL
INCHES MILLIMETERS
1.270.050
3.750.148
15.700.618
2.25
4.50
0.089
0.177
