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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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QSE113 / QSE114 — Plastic Silicon Infrared Phototransistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE113 / QSE114 Rev. 2.1 1
May 2015
QSE113 / QSE114
Plastic Silicon Infrared Phototransistor
Features
• NPN Silicon Phototransistor
• Package Type: Sidelooker
• Medium Wide Recept ion Angle, 50°
• Package Ma terial and Color: Black Epoxy
• Matched Emitter: QEE113
• Daylight Filter
• High Sensitivity
• Blue dot marking on the top side
Package Dimensions(1, 2)
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
Schematic
Collector
Emitter
0.175 (4.44)
0.200 (5.08)0.050 (1.27)
0.020 (0.51) SQ.
(2X)
0.500 (12.70)
MIN
Ø 0.065 (1.65)
Ø 0.095 (2.41)
0.100 (2.54)
0.100 (2.54)
NOM
0.030 (0.76)
0.087 (2.22)
EMITTER COLLECTOR
Description
The QSE113/114 is a silicon phototransistor encapsu-
lated in a wide angle, infrared transparent, black plastic
sidelooker package.
QSE113 / QSE114 — Plastic Silicon Infrared Phototransistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE113 / QSE114 Rev. 2.1 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
3. Derate power dissipation linearly 1.33 mW/°C above 25°C.
4. RMA flux is recommended.
5. Methanol or isopropyl alcohols are recommended as cleaning agents.
6. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
7. λ = 880 nm (AlGaAs)
Symbol Parameter Value Unit
TOPR Operating Temperature -40 to +100 °C
TSTG Storage Temperature -40 to +100 °C
TSOL-I Soldering Temperature (Iron)(4, 5, 6) 240 for 5 sec °C
TSOL-F Solderi ng Temp erat ure (Flow)(4, 5) 260 for 10 sec °C
VCE Collector Emitter Voltage 30 V
VEC Emitter Collector Voltage 5 V
PDPower Dissipation(3) 100 mW
Symbol Parameter Conditions Min. Typ. Max. Unit
λPS Peak Sensitivity 880 nm
ΘReception An gle ±25 °
lCEO Collector Emitter Dark Current VCE = 10 V, Ee = 0 100 nA
BVCEO Collector-Emitter Breakdown IC = 1 mA 30 V
BVECO Emitter-Collector Breakdown IE = 100 μA5 V
IC(ON)
On-State Collector Current(7)
QSE113 Ee = 0.5 mW/cm2, VCE = 5 V 0.25 1.50 mA
On-State Collector Current(7)
QSE114 1.00
VCE(SAT) Saturation Voltage(7) Ee = 0.5 mW/cm2, IC = 0.1 mA 0.4 V
trRise Time IC = 1 mA, VCC = 5 V,
RL = 100 Ω
8μs
tfFall Time 8 μs
QSE113 / QSE114 — Plastic Silicon Infrared Phototransistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE113 / QSE114 Rev. 2.1 3
Typical Performance Characteristics
Figure 1. Light Current vs. Radiant Intensity Figure 2. Angular Response Curve
Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Ee - Radiant Intensity (mW/cm2)
0.1 1
I
C(ON)
- Light Current (mA)
10-1
100
101
VCE = 5V
GaAs Light Source
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
VCE - Collector-Emitter Voltage (V)
0 5 10 15 20 25 30
I
CEO
- Dark Current (nA)
10-3
10-2
10-1
100
101
VCE - Collector-Emitter Voltage (V)
0.1 1 10
I
L
- Normalized Light Current
10-2
10-1
100
101
Normalized to:
VCE = 5V
Ie = 0.5mW/cm2
TA= 25°C
Ie = 0.5mW/cm 2
Ie = 0.2mW/cm 2
Ie = 0.1mW/cm 2
Ie = 1mW/cm 2
TA - Ambient Temperature (°C)
25 50 75 100
I
CEO
- Normalized Dark Current
10-1
100
101
102
103
104
Normalized to:
V
CE
= 25V
T
A
= 25°C
V
CE
= 25V
V
CE
= 10V
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I74
®
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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