Document Number: 93943 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 25-Jun-08 1
Schottky Rectifier, 10 A
10TQ...S
Vishay High Power Products
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
DESCRIPTION
The 10TQ...S Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
IF(AV) 10 A
VR35/45 V
D2PAK Anode
13
Base
cathode
2
N/C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 10 A
VRRM 35/45 V
IFSM tp = 5 µs sine 1050 A
VF10 Apk, TJ = 125 °C 0.49 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 10TQ035S 10TQ045S UNITS
Maximum DC reverse voltage VR35 45 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 151 °C, rectangular waveform 10 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated
load condition and with
rated VRRM applied
1050
A
10 ms sine or 6 ms rect. pulse 280
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 6.5 mH 13 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2A
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2Revision: 25-Jun-08
10TQ...S
Vishay High Power Products Schottky Rectifier, 10 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
10 A TJ = 25 °C 0.57
V
20 A 0.67
10 A TJ = 125 °C 0.49
20 A 0.61
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
2mA
TJ = 125 °C 15
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 900 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to case RthJC
DC operation
See fig. 4 2.0
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D2PAK 10TQ035S
10TQ045S
Document Number: 93943 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 25-Jun-08 3
10TQ...S
Schottky Rectifier, 10 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
100
10
0.1
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward
Current (A)
0 0.2 0.6 1.0 1.4 1.8
TJ = 25 °C
TJ = 175 °C
TJ = 125 °C
0.4 0.8 1.2 1.6
1
1000
VR - Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.0001
0.001
0.01
0.1
1
05 15 25 35 40 45
10
1000
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10 20 30
100
1000
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
0
100
20 40 5010 30
TJ = 25 °C
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
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4Revision: 25-Jun-08
10TQ...S
Vishay High Power Products Schottky Rectifier, 10 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
IF(AV) - Average Forward Current (A)
Allowable Case Temperature (°C)
155
160
165
170
175
180
051015
10TQ
RthJC (DC) = 2.0 °C/W
DC
IF(AV) - Average Forward Current (A)
Average Power Loss (W)
051015
0
1
2
4
3
8
DC
RMS limit
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
5
6
7
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Surge Current (A)
10 100 1000 10 000
100
1000
At any rated load condition and
with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
Document Number: 93943 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 25-Jun-08 5
10TQ...S
Schottky Rectifier, 10 A Vishay High Power Products
ORDERING INFORMATION TABLE
1- Current rating (10 A)
2- Circuit configuration:
T = TO-220
3- Schottky “Q” series
4- Voltage ratings
5- S = D
2
PAK
6- None = Tube (50 pieces)
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
7- None = Standard production
PbF = Lead (Pb)-free
035 = 35 V
045 = 45 V
Device code
51324
67
10 T Q 045 S TRL -
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95014
Part marking information http://www.vishay.com/doc?95008
Packaging information http://www.vishay.com/doc?95032
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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therein, which apply to these products.
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