TEXAS INSTR {fOPTO} be DE J atb172b g03b724 Q | I oO TO-220AB PACKAGE MT2 GATE MAIN TERMINAL 2 MAIN TERMINAL 1 MT1 MAIN TERMINAL 2 IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) Tic226A | TIC226B TIG226C | TIC226D on-state current at (see Note 2} on-state surge current, on-state surge current case temperature gate current, gate power (pulse duration < 200 ps} gate power {see Note 5} case temperature range case temperature case temperature temperature range mm case NOTES: . These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. . This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 120 mA/C, . . This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. . This valus applies for one 50-Hz haif-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge gate contra! may be lost. 5. This value applies for a maximum averaging time of 20 ms. No > ww TEXAS wy . 4-35 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 76265 8967726 TEXAS INSTR {OPTO) ; 62C 36724 . D TE, - TIC226A, TIC226B, TIC226C, TIC226D, TIC216E, TIC226M, TIC226S, TIC226N SILICON TRIACS REVISED OCTOBER 1984 @ Sensitive-Gate Triacs ; T-2 S75 @ 100Vto800V . @ S8ARMS, 70 A Peak @ Max IGT of 5 mA (Quadrant 1-3) device schematic TIC DevicesTEXAS INSTR {LOPTOF 8961726 TEXAS INSTR COPTO) TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226S, TIC226N SILICON TRIACS be DE Bp ocb72 0036725 1 I 62C 36725 OD y T2531 . , absolute maximum ratings at 25C case temperature (unless otherwise noted) : on-state current at case temperature i (see Note 2) . on-state surge current, on-state surge cursent | gate current, gate power at case temperature (pulse duration < 200 gate power (av): at case temperature (see Note 5) case temperature range temperature range 1,6mm case - temperature at the rate of 120 mA/C, ~ 5. This value applies for a maximum averaging time of 20 ms. 0 OIL S9DIA9 NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive Joad. Above 85C derate linearly to 110C case 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate controi may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge gate contro! may be lost. TIC226M | TIC226S | TIC226N to to es 4-36 . TEXAS INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 er renter ret ernireTEXAS INSTR TOPTOF ke Dey 84b17?2b OO3b7?eb 3 i 62C 36726 =D | 8961726 TEXAS INSTR OPTO) ; _ tah Me SLT i a > . TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226S, TIC226N | SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) - t =? 5 -{ Ss . | PARAMETER TEST CONDITIONS MIN TYP MAX] UNIT i lpRM Repetitive Peak VDRM = RatedVprm, iG = 0. Toe = 110C +2| mA Off-State Current ! - Veupply = + 12Vt, AL = 108, twig) > 20 u8 2 50 iom Peak Gate Veupply = + 12Vt, RL = 109, twig) 2 20 zs ~12 -50] 7, Trigger Current, Veupply = 12, RL = 109, twig) > 20 xs -9 -50 Veupply = 12V1, RL = 109, twig) > 20 us 20 Veupply = +12V7, Rt = 108, twig) 204s 0.7 2 Verm Peek Gate Vsupply = + 12Vt, Ri = 102, twig) 2 20p8 08 -21 , . Trigger Voltage Veupply = 12Vt. RL = 102, tw(g) 2 20 us -08 -2 - Veupply = 12VT, RL = 102, twig) > 20 ns 0.9 2 vim Peak On-State _ ITM = 124, ig = 5OMA, See Note 6 #16 221] V Voltage - - - : Vv = t, =0, tears Ia 100mA 53 ly Holding Current $M = mA Vsupply = ~ 121, Ig = 0, _9 ~30 initiating IT = 100mA = +12Vvt, 7 6 IL Latching Current Vsupply = +12 See Note 0 mA Vsupply = 127, See Note 7 ~50 dv/idt Critical Rate of Rise Vorm = RatedVprm, 'g = 0, Te = 110C 100 Vins of Off-State Voltage iti H Vv; = Rated V Iyam = +4.2A, Te = dvidt(cy titicel Rise of DAM = RatedVpRm, TRAM = 85C 5 Vins Commutation Voltage See Figure 9 T All voltages are with respect to Main Terminal 1. 7) NOTES: 6. These parameters must be measured using pulse techniques, tw < 1 ms, duty cycle < 2 %. Voltage-sensing contacts, a separate from the current-carrying contacts, are located within 3,2 mm (1/8 inch) from the device body. 2 7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: > RG = 1002, ty = 20ys, tp <15 ns, t-<150ns, f = 1 kHz. . @- . a thermal characteristics oO PARAMETER MIN TYP MAX] UNIT - Resc 1.8 C, Rea 62.5 WwW me we TEXAS 4-37 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 ae - - a eee ee re sree we i er we eeTEXAS INSTR LOPTO} be vey Bobl?eb OOSb7e7 5 Tt - 9617 EXAS INSTR OPTO) TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226S, TIC226N SILICON TRIACS y 62C 36727) D- T2535 1S IgT Gate Trigger Current mA -40 -20 TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE GATE TRIGGER CURRENT vs CASE TEMPERATURE Vaa=2i2V RL = 102 twig) = 20 uss supply |@TM 0 40 60 8680100 Tc Case Temperature C FIGURE 1 vs CASE TEMPERATURE a 0 > @ | < = a & : ; & = & Qo Vsupply |GTM L ; oe Vaatt12V S nee RL= 102 - + twlg) = 20 us 0.1 ~40 -20 0 20 40 60 80 100 Tc Case Temperature c FIGURE 2 te 4 438 TEXAS INSTRUMENTS POST OFFi ICE BOX 226012 DALLAS, TEXAS 76265 ?TEXAS INSTR {0PTO} EXA b2 DE BJ ade172b Oo3b728 ? I : j OPTO) 62c 36728 0 | TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226S, TIC226N Ot SILICON TRIACS IH Holding Current mA | Vsupply |GTM + + -40 -20 0 20 40 60 80 6100 To Case Temperature C TYPICAL CHARACTERISTICS T-29 ~ / Ss HOLDING CURRENT vs CASE TEMPERATURE Vaa=212V - Ig=0 - Initiating =100mA FIGURE 3 GATE FORWARD VOLTAGE 5 , vs ok GATE FORWARD CURRENT w 10 o 2 > 4 > ! a @ 3 2 Eo s ! 3 . re 2 @ 91 1 0,04 s ta =0 QUADRANT 1 Te=25 0.01 - ~ "9.0001 0.0004 0.001 0.004 0.01 0.04 0.1 04 1 IGE Gate Forward Current A FIGURE 4 i . TEXAS xp 4-39 INSTRUMENTS POST OFFICE BOX 226012 @ DALLAS, TEXAS 75265 +TEXAS INSTR {OPTOF be DEP ase17eb ooae729 9 9 B861726 TEXAS INSTR COPTO) 62C 36729 DB TIC226A, TIC226B, TIC226C, TIC226D, 7T-2500U75 TIC226E, TIC226M, TIC226S, TIC226N SILICON TRIACS ae - TYPICAL CHARACTERISTICS LATCHING CURRENT vs CASE TEMPERATURE Vsupply GTM + + 400 + ame -_+ =a Q o IL Latching Current mA 3 & pS . -40 -20 0 20 #40 60 80 = 100 ~ Te Case Temperature C FIGURE 5 THERMAL INFORMATION SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION To <5" See Note 8 100 d DIL 40 S9DIAB 10 itsm Peak Full-Sine-Wave Current A 1 4 10 40 100 400 1k Consecutive 50-Hz Half-Sine-Wave Cycles s FIGURE 6 NOTES: 8. The dashed curve shows the maximum number of cycles of surge current recommended for safe operation provided the device is initially operating at, or below, the rated value of on-state current; however, during the surge peridd gate control of the device is initially at nonoperating thermal equilibrium. . 9. The solid curve shows the maximum number of cycles of surge current for which gate contro! is guaranteed provided the device is initially at nonoperating thermal equilibrium. i TEXAS INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 4-40 !TEXAS INSTR {fOPTO} be DE 84b17?2eb OO3b7320 5 Bs561726 TEXAS INSTR COPTO) : 62C 36730 D y TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226S, TIC226N SILICON TRIACS vs - CASE TEMPERATURE _ eo IT(RMS) Maximum On-State Current A o = NH a a a uu eo 6 Q 25 50 7 100 FIGURE 7 T=11 Conduction Angle = 360 See Note 10 RB OR 8 Play) ~ Maximum Average Power Dissipated -W > o RN & 0 2 4 6 8B 10 IT(RMS) RMS On-State Current -A ~- FIGURE 8 NOTE 10: For operation at current greater than 8 amps rms, see Figure 6. THERMAL INFORMATION MAXIMUM RMS ON-STATE CURRENT To Case Temperature C , MAXIMUM AVERAGE POWER DISSIPATED vs RMS ON-STATE CURRENT T2545 125 = 150 at 2 Tic Devices 12 4 16 , | bes f, TEXAS 441 . INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 qo