1. Product profile
1.1 General description
30 W LDMOS 2-stage power MMIC for base station applica tions at frequencies from
2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead
(SOT834-1).
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz:
Average output power = 2 W
Power gain = 30 dB (typ)
Efficiency = 9 %
IMD3 = −48 dBc
ACPR = −50 dBc
Integrated temperature compensated bias
Excellent thermal stability
Biasing of individual stages is externally accessible
Integrated ESD protection
Small component size, very suitable for PA size reduction
On-chip matching (input matched to 50 Ohm, ou tput partially matched)
High power gain
Designed for broadband operation (2100 MHz to 2200 MHz)
Compliant to Directive 2002/95/EC, rega rd in g Re str ictio n of Haza rd ous Sub s tances
(RoHS)
BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
Rev. 4 — 7 March 2011 Product data sheet
Table 1. Typical performance
Ty pical RF performance at Th = 25
°
C.
Mode of operation f VDS PL(AV) GpηDIMD3 ACPR
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA 2110 to 2170 28 2 29.5 9 −48[1] −50[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 2 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
2. Pinning information
2.1 Pinning
2.2 Pin description
3. Ordering information
Transparent top view.
Fig 1. Pin configuration
BLM6G22-30
BLM6G22-30G
GND GND
VDS1
n.c. n.c.
n.c.
n.c.
RF_INPUT RF_OUTPUT/VDS2
n.c.
n.c.
VGS1 n.c.
VGS2
GND GND
001aae321
1
2
3
4
5
6
7
8
9
10
11 12
13
14
15
16
Table 2. Pin descripti on
Symbol Pin Description
GND 1, 11, 12, 16 ground
VDS1 2 first stage drain-source voltage
n.c. 3, 4, 5, 7, 8, 13, 15 not connected
RF_INPUT 6 RF input
VGS1 9 first stage gate-source voltage
VGS2 10 second stage gate-source voltage
RF_OUT/VDS2 14 RF output or second stage drain-source voltage
RF_GND flange RF ground
Table 3. Ordering i nformation
Type number Package
Name Description Version
BLM6G22-30 HSOP16F plastic, heatsink small outline package; 16 leads (flat) SOT834-1
BLM6G22-30G HSOP16 plastic, heatsink small outline package; 16 leads SOT822-1
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 3 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
4. Block diagram
5. Limiting values
6. Thermal characteristics
[1] Thermal resistance is determined under specific RF operating conditions.
Fig 2. Block diagr am of BLM6G22-30 and BLM6G22-30G
001aah621
2
V
DS1
14 RF_OUTPUT/V
DS2
6
RF_INPUT
9
V
GS1
10
V
GS2
TEMPERATURE
COMPENSATED BIAS
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-sourc e voltage - 65 V
VGS gate-source voltage 0.5 +13 V
ID1 first stage drain current - 3 A
ID2 second stage drain current - 9 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-c)1 first stage thermal resistance
from junction to case Tcase = 25 °C; PL=2W;
2-carrier W-CDMA [1] 3.9 K/W
Rth(j-c)2 second stage thermal resistance
from junction to case Tcase = 25 °C; PL=2W;
2-carrier W-CDMA [1] 2.1 K/W
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 4 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
7. Characteristics
8. Application information
8.1 Ruggedness
The BLM6G22-30 and BLM6G22-30G are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
VDS =28V; I
Dq1 = 270 mA; IDq2 = 280 mA ; PL = 2 W; 2-carrier W-CDMA.
8.2 Impedance information
[1] Device input impedance as measured from gate to ground.
[2] Test circuit impedance as measured from drain to ground.
Table 6. Characteristics
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF;
3GPP test model 1; 1-64 PDPCH; f1= 2112.5 MHz; f2= 2122.5 MHz; f3= 2157.5 MHz;
f4= 216 7.5 MHz; VDS = 28 V; IDq1 = 270 mA; IDq2 =280mA; T
h = 25
°
C unless otherwise specified;
in a production test circuit as described in Section 9 “Test information”.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 2 W 27.5 30 32.5 dB
RLin input return loss PL(AV) = 2 W - −14 −10 dB
ηDdrain efficiency PL(AV) = 2 W 7.5 9 - %
IMD3 third-order intermodulation distortio n PL(AV) = 2 W - −48 −44.5 dBc
ACPR adjacent channel power ratio PL(AV) = 2 W - −50 −47 dBc
Table 7. Typical impedance
f Zi[1] ZL[2]
MHz Ω Ω
2075 40.9 + j22.8 18.0 − j5.5
2085 41.2 + j23.2 17.8 − j5.6
2095 41.6 + j23.3 17.7 − j5.7
2105 41.9 + j23.3 17.7 − j5.9
2115 42.1 + j23.3 17.6 − j6.0
2125 42.2 + j23.2 17.4 − j6.0
2135 42.4 + j23.1 17.3 − j6.1
2145 42.3 + j22.9 17.2 − j6.1
2155 42.5 + j22.8 17.0 − j6.2
2165 42.6 + j22.8 16.8 − j6.3
2175 42.7 + j22.8 16.6 − j6.4
2185 43.0 + j23.0 16.4 − j6.6
2195 43.6 + j23.1 16.3 − j6.9
2205 44.2 + j23.3 16.1 − j7.2
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 5 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
8.3 Performance curves
Performance curves are measured in a BLM6G22-30G application circuit.
Tcase = 25 °C; VDS = 28 V; PL(AV) =2W; I
Dq1 = 270 mA;
IDq2 = 280 mA; carrier spacing = 10 MHz. Tcase = 25 °C; VDS = 28 V; PL(AV) =2W; I
Dq1 =270mA;
IDq2 = 280 mA; carrier spacing = 10 MHz.
Fig 3. 2-carrier W-CDMA power gain and drain
efficiency as functions of frequency ;
typical values
Fig 4. 2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as functions of frequency; typical values
VDS = 28 V; IDq1 =270mA; I
Dq2 = 280 mA;
carrier spacing = 10 MHz.
(1) Tcase = −30 °C
(2) Tcase = 25 °C
(3) Tcase = 85 °C
VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA;
carrier spacing = 10 MHz.
(1) Tcase = −30 °C
(2) Tcase = 25 °C
(3) Tcase = 85 °C
Fig 5. 2-carrier W-CDMA power gain and drain
efficiency as functions of
average output power and temperature;
typical values
Fig 6. 2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as function s of av e r age output pow er and
temperature; typical values
f (MHz)
2050 225022002100 2150
001aah622
29
31
27
33
35
Gp
(dB)
25
9
11
7
13
15
ηD
(%)
5
Gp
ηD
f (MHz)
2050 225022002100 2150
001aah623
−49
−47
−45
IMD3,
ACPR
(dBc)
−51
IMD3
ACPR
001aah624
30
26
34
38
28
32
36
Gp
(dB)
24
15
5
25
35
10
20
30
ηD
(%)
0
PL(AV) (W)
10−1102
101
(1)
(1), (2), (3)
(2)
(3) Gp
Gp
Gp
ηD
001aah625
−40
−50
−30
−20
−45
−35
−25
IMD3,
ACPR
(dBc)
−55
PL(AV) (W)
10−1102
101
(1)
(1)
(2)
(2)
(3)
(3)
IMD3
ACPR
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 6 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
f = 2140 MHz; IDq1 = 270 mA; IDq2 = 280 mA.
(1) VDS = 24 V
(2) VDS = 28 V
(3) VDS = 32 V
IDq1 = 270 mA; IDq2 = 280 mA; f1= 2140 MHz;
f2= 2140.1 MHz.
Fig 7. One-tone CW power gain as function o f output
power and drain-source voltage; typical value Fig 8. Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
value
Test signal: IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on
the CCDF.
(1) Tcase = −30 °C
(2) Tcase = 25 °C
(3) Tcase = 85 °C
Fig 9. Single-carr ier peak output power as function of frequency and temperat ure; typical values
PL (W)
0403010 20
001aah626
28
26
30
32
Gp
(dB)
24
(1) (2) (3)
001aah627
−60
−80
−40
−20
−70
−50
−30
IMD
(dBc)
−90
PL(PEP) (W)
10−1102
101
IMD3
IMD5
IMD7
f (MHz)
2050 225022002100 2150
001aah628
23
27
19
31
35
PL(M)
(W)
15
(1)
(2)
(3)
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 7 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
9. Test information
[1] American Technical Ceramics (ATC) type 100A or capacitor of same quality.
Striplines are on a double copper-clad Rogers 4350B Printed-Circuit Board (PCB) with εr = 3.5; thickness = 0.76 mm.
See Table 8 for a list of components.
Fig 10. Component layout for 2110 MHz to 2170 MHz circuit for 2-carrier W-CDMA
001aah62
9
C3
C1
C4
R1
C2 C8
R2
C5
C7
C6
C10
C12
C9
C11
C15
C13 C14
Table 8. List of components
For test circuit see Figure 10.
Component Description Value Remarks
C1, C13 multilayer ceramic chip capacitor 0.3 pF [1]
C2, C4, C8, C11, C12 multilayer ceramic chip capacitor 4.7 μF; 50 V
C3, C15 electrolytic capacitor 220 μF; 35 V
C5, C9, C10, C14 multilayer ceramic chip capacitor 10 pF [1]
C6, C7 multilayer ceramic chip capacitor 100 nF
R1 SMD resistor 0805 1 kΩ
R2 SMD resistor 0805 3.9 kΩ
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 8 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
10. Package outline
Fig 11. Package outline SOT834-1 (HSOP16F)
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT834-1
sot834-1_po
03-10-22
10-10-20
Unit(1)
mm
max
nom
min
Dimensions
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
vA
y
w
w
bp (10×)
w
H
SOP16F: plastic, heatsink small outline package; 16 leads (flat) SOT834-
1
e3(2×)
1216
111
X
E
c
D
E2
e1
(6×)(2×)
e2(4×)
D2
Z
bp2
bp1 (5×)
D1
HE
E1
A
e
pin 1 index
0 5 10 mm
scale
0.43
0.28
0.32
0.23
16.0
15.8
13.0
12.6
1.1
0.9
11.1
10.9
6.2
5.8
2.9
2.5
1.02 1.37
16.2
15.8
1.7
1.5
A2bpbp1
1.09
0.94
5.87
5.72
3.5
3.2
bp2 cD
(1) D1
0.25
wyZD2E(1) E1E2ee
1e2
5.69
e3
3.81 0.1
2.5
2.0
HEQ1
0.25
v
detail X
Q1
A2
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 9 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
Fig 12. Package outline SOT822-1 (HSOP16)
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT822-1
sot822-1_po
07-02-08
10-10-20
Unit(1)
mm
max
nom
min
3.6
0.2
0
0.35
0.06
−0.06
0.43
0.28
1.09
0.94
5.87
5.72
0.32
0.23
16.0
15.8
13.0
12.6
1.1
0.9
11.1
10.9
1.02 1.37
A
Dimensions
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included
A1A2
3.5
3.2
A3A4bpbp1
3.81
e3HELp
bp2 cD
(1) D1D2E(1) E1
6.2
5.8
E2
2.9
2.5
14.5
13.9
1.1
0.8
ee
1
5.69
e2
SOT822-
1H
SOP16: plastic, heatsink small outline package; 16 leads
y
D
A
vA
X
E
c
E2
HE
bp (10×)
w
w
11
16
1
pin 1 index
E1
D2
e3(2×)
e1(2×)
e2(4×)
e(6×)
bp2
bp1 (5×)
D1
12
Z
0.1
2.5
2.0
8°
0°
yZθ
0.25
v
0.25
w
1.5
1.4
Q
w
0 5 10 mm
scale
detail X
Lp
Q
A
A4
(A3)
A1
A2
θ
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 10 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
11. Handling information
11.1 ESD protection
11.2 Moisture sensitivity
12. Abbreviations
Table 9. ESD protection characteristics
Test condition Class
Human Body Model (HBM) 1
Machine Model (MM) 1
Table 10. Moistu re sensitivity level
Test methodology Class
JESD-22-A113 3
Table 11. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
IS-95 Interim Standard 95
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MMIC Monolithic Microwave Integrated Circuit
PA Power Amplifier
PAR Peak-to-Average power Ratio
PDPCH transmission Power of the Dedicated Physical CHannel
RF Radio Frequency
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multipl e Access
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 11 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
13. Revision history
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLM6G22-30_BLM6G22-30G v.4 20110307 Product data sheet - BLM6G22-30_BLM6G22-30G
v.3
Modifications: •Data sheet status has been changed to “Product data sheet”
•Table 6 on page 4: the values of RLin have been depicted on a negative scale
BLM6G22-30_BLM6G22-30G v.3 20081121 Preliminary data sheet - BLM6G22-30_BLM6G22-30G
v.2
BLM6G22-30_BLM6G22-30G v.2 20080904 Prelimin ary data sheet - BLM6G22-30_BLM6G22-30G
v.1
BLM6G22-30_BLM6G22-30G v.1 20080303 Objective data sheet - -
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 12 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
14. Legal information
14.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat ion — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
14.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect , incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descripti ons, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-crit ical or
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malfunction of an NXP Semiconductors product can reasonably be expect ed
to result in perso nal injury, death or severe propert y or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associate d with t heir
applications and products.
NXP Semiconductors does not accept any liabil i ty related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the appl ication or use by customer’s
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testing for the customer’s applications and pro ducts using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
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Export control — This document as well as the item(s) described herein
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authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product develop ment.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] data sheet Production This document contains the product specification.
BLM6G22-30_BLM6G22-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 March 2011 13 of 14
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors prod uct is automotive qualified,
the product is not suitable for automotive use. It i s neit her qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such au tomotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y
liability, damages or failed produ ct claims result ing from custome r design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specif ications.
14.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 March 2011
Document identifier: BLM6G22- 30_BLM6G22-30G
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Application information. . . . . . . . . . . . . . . . . . . 4
8.1 Ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8.2 Impedance information. . . . . . . . . . . . . . . . . . . 4
8.3 Performance curves . . . . . . . . . . . . . . . . . . . . . 5
9 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Handling information. . . . . . . . . . . . . . . . . . . . 10
11.1 ESD protection . . . . . . . . . . . . . . . . . . . . . . . . 10
11 .2 Moisture sensitivity. . . . . . . . . . . . . . . . . . . . . 10
12 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
15 Contact information. . . . . . . . . . . . . . . . . . . . . 13
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
