2011-10-12
Rev 2.6 Page 1
SPD09P06PL G
SIPMOS
=
==
=Power-Transistor Product Summary
VDS
-60 V
RDS
(
on
)
0.25
ID-9.7 A
Feature
P-Channel
Enhancement mode
Logic Level prueb
175°C operating temperature
Avalanche rated
dv/dtrated
PG-TO252-3
Gate
pin1
Drain
pin 2
Source
pin 3
Type Package
SPD09P06PL G PG-TO252-3
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
TC=100°C
ID
-9.7
-6.8
A
Pulsed drain current
TC=25°C
ID puls -38.8
Avalanche energy, single pulse
ID=-9.7 A , VDD=-25V, RGS=25
EAS 70 mJ
Avalanche energy, periodic limited by T
j
max EAR 4.2
Reverse diode dv/dt
IS=-9.7A, VDS=-48, di/dt=200A/µs, Tjmax=175°C
dv/dt6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TC=25°C
Ptot 42 W
Operating and storage temperature T
j
,Tst
g
-55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Lead free
Yes
• P-channel
• Enhancement mode
• Logic Level
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
• Pb-free lead plating; RoHS compliant
° Qualified according to AEC Q101
2011-10-12
Rev 2.6 Page 2
SPD09P06PL G
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 3.6 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 100
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
-
-
75
50
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=-250µA
V(BR)DSS -60 - - V
Gate threshold voltage, VGS = VDS
ID=-250µA
VGS(th) -1 -1.5 -2
Zero gate voltage drain current
VDS=-60V, VGS=0V, Tj=25°C
VDS=-60V, VGS=0V, Tj=150°C
IDSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
VGS=-20V, VDS=0V
IGSS - -10 -100 nA
Drain-source on-state resistance
VGS=-4.5V, ID=-5.4A
RDS(on) - 0.3 0.4
Drain-source on-state resistance
VGS=-10V, ID=-6.8A
RDS(on) - 0.2 0.25
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2011-10-12
Rev 2.6 Page 3
SPD09P06PL G
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS
2*ID*RDS(on)max ,
ID=-5.4
1.8 3.5 - S
Input capacitance Ciss VGS=0V, VDS=-25V,
f=1MHz
- 360 450 pF
Output capacitance Coss - 103 130
Reverse transfer capacitance Crss - 40 50
Turn-on delay time td(on) VDD=-30V, VGS=-4.5V,
ID=-5.4, RG=6
- 11 17 ns
Rise time trVDD=-30V, VGS=-4.5V,
ID=-5.4A, RG=6
- 168 252
Turn-off delay time td(off) - 49 74
Fall time tf- 89 134
Gate Charge Characteristics
Gate to source charge Qgs VDD=-48V, ID=-9.7A - 1.3 2 nC
Gate to drain charge Qgd - 5.1 7.5
Gate charge total QgVDD=-48V, ID=-9.7A,
VGS=0 to -10V
- 14 21
Gate plateau voltage V
(p
lateau
)
VDD=-48V, ID=-9.7A - -4.1 - V
Reverse Diode
Inverse diode continuous
forward current
ISTC=25°C - - -9.7 A
Inverse diode direct current,
pulsed
ISM - - -38.8
Inverse diode forward voltage VSD VGS=0V, IF=-9.7A - -1.1 -1.4 V
Reverse recovery time trr VR=-30V, IF=lS,
diF/dt=100A/µs
- 52 76 ns
Reverse recovery charge Qrr - 64 96 nC
2011-10-12
Rev 2.6 Page 4
SPD09P06PL G
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 140 160 °C 190
TC
0
5
10
15
20
25
30
35
40
W
50 SPD09P06PL
P
tot
2 Drain current
ID=f(TC)
parameter: VGS
10 V
0 20 40 60 80 100 120 140 160 °C 190
TC
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
A
-11 SPD09P06PL
ID
3 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC = 25 °C
-10 -1 -10 0-10 1-10 2
V
VDS
-1
-10
0
-10
1
-10
2
-10
A
SPD09P06PL
ID
R
DS(on)
=V
DS
/I
D
DC
10 ms
1 ms
100 µs
tp = 11.0µs
4 Transient thermal impedance
ZthJC = f(tp)
parameter : D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD09P06PL
ZthJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2011-10-12
Rev 2.6 Page 5
SPD09P06PL G
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 80 µs
0 -2 -4 -6 -8 V-12
VDS
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
A
-24 SPD09P06PL
ID
VGS [V]
a
a -2.0
b
b -2.5
c
c -3.0
d
d -3.5
e
e -4.0
f
f -4.5
g
g -5.0
h
h -5.5
i
i -6.0
j
j -7.0
k
Ptot = 42W
k -8.0
6 Typ. drain-source on resistance
RDS(on) = f(ID)
parameter: VGS
0 -2 -4 -6 -8 -10 -12 -14 -16 A-20
ID
0
0.1
0.2
0.3
0.4
0.5
0.6
0.8 SPD09P06PL
RDS(on)
VGS [V] =
c
c
-3.0
d
d
-3.5
e
e
-4.0
f
f
-4.5
g
g
-5.0
h
h
-5.5
i
i
-6.0
j
j
-7.0
k
k
-8.0
7 Typ. transfer characteristics
ID= f ( VGS ); VDS
2 x ID x RDS(on)max
parameter: tp = 80 µs
0 1 2 3 4 5 6 V 8
VGS
0
5
10
15
A
25
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
0 1 2 3 4 5 6 7 8 V 10
ID
0
0.5
1
1.5
2
2.5
3
S
4
g
fs
2011-10-12
Rev 2.6 Page 6
SPD09P06PL G
9 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = -6.8 A, VGS = -10 V
-60 -20 20 60 100 140 °C 200
Tj
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.75
SPD09P06PL
RDS(on)
typ
98%
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS,ID = -250 µA
-60 -20 20 60 100 °C 180
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
VGS(th)
typ.
98 %
2 %
11 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 -5 -10 -15 -20 V -30
VDS
1
10
2
10
3
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
, tp= 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3
VSD
-1
-10
0
-10
1
-10
2
-10
A
SPD09P06PL
I
F
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 175 °C typ
Tj = 175 °C (98%)
2011-10-12
Rev 2.6 Page 7
SPD09P06PL G
13 Typ. avalanche energy
EAS = f(Tj)
par.: ID = -9.7 A , VDD = -25 V, RGS = 25
25 45 65 85 105 125 145 °C 185
Tj
0
10
20
30
40
50
60
mJ
80
EAS
14 Typ. gate charge
VGS =f (QGate)
parameter: ID = -9.7 A pulsed
0 4 8 12 16 20 nC 28
QGate
0
-2
-4
-6
-8
-10
-12
V
-16 SPD09P06PL
V
GS
0,8 VDS max
DS max
V
0,2
15 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 140 °C 200
Tj
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
SPD09P06PL
V
(BR)DSS
Rev 2.6 page 8 2011-10-12
SPD09P06PL G
Package outline: PG-TO252-3
2011-10-12
Rev 2.6 Page 8
SPD09P06PL G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
