PAGE . 2March 09,2011-REV.02
BC817 SERIES
ELECTRICAL CHARACTERISTICS ( TJ=25oC,unless otherwise notes )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 ) V
(BR)
CEO 45 - - V
Collector-Base Breakdown Voltage ( V
EB
=0V, Ic=10A ) V
(BR)
CBO 50 - - V
Emitter-Base Breakdown Voltage ( I
E
=1A, Ic=0 ) V
(BR)
EBO 5.0 - - V
Emitter-Base Cutoff Current ( V
EB
=5V ) I
EBO
- - 100 nA
Collector-Base Cutoff Current ( V
CB
=20V, I
E
=0 ) T
J
=25
o
C
T
J
=150
o
CI
CBO
-
-
-
-
100
5.0
nA
A
DC Current Gain ( Ic=100mA, V
CE
=1V )
DC Current Gain ( Ic=500mA, V
CE
=1V )
BC817-16
BC817-25
BC817-40 h
FE
100
160
250
40
-
-
-
-
250
400
600
-
-
Collector-Emitter Saturation Voltage ( Ic=500mA, I
B
=50mA ) V
CE(SAT)
--0.7V
Base-Emitte Voltage ( Ic=500mA, V
CE
=1.0V ) V
BE(ON)
--1.2V
Collector-Base Capacitance (V
CB
=10V, I
E
=0, f=1MHz) C
CBO
-7.0- pF
Current Gain-Bandwidth Product ( Ic=10mA, V
CE
=5V, f=100MHz ) f
T
100 - - MHz
Collector Current I,C()mA
hFE
V , V (V)
CB EB
C,C (F)
CB CB P
Collector Current I,C()mA
hFE
Collector Current I,C()mA
hFE
0
50
100
150
200
250
300
0.01 0.1 1 10 100 1000
VCE = 1V
10
100
CIB (EB)
COB(EB)
0
50
100
150
200
250
300
350
400
450
0.01 0.1 1 10 100 1000
VCE = 1V
0
100
200
300
400
500
600
700
0.01 0.1 1 10 100 1000
VCE = 1V
1
0.1 1 10 100
Fig.1 BC817-16 Typical h vs. I
FE C
Fig.1 BC817-16 Typical h vs. I
FE C Fig.2 BC817-25 Typical h vs. I
FE C
Fig.2 BC817-25 Typical h vs. I
FE C
Fig.4 Typical Capacitances
Fig.3 BC817-40 Typical h vs. I
FE C
Fig.3 BC817-40 Typical h vs. I
FE C