2011-10-13
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BCP54...-BCP56...
NPN Silicon AF Transistors
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP51...BCP53 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCP54
BCP54-16
BCP55
BCP55-16
BCP56-10
BCP56-16
*
*
*
*
*
*
1=B
1=B
1=B
1=B
1=B
1=B
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
4=C
4=C
4=C
4=C
4=C
4=C
-
-
-
-
-
-
-
-
-
-
-
-
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
* Marking is the same as the type-name
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BCP54...-BCP56...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCP54
BCP55
BCP56
VCEO
45
60
80
V
Collector-base voltage
BCP54
BCP55
BCP56
VCBO
45
60
100
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current, tp ≤ 10 ms ICM 1.5
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 120°C
Ptot 2 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 15 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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BCP54...-BCP56...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCP54...
IC = 10 mA, IB = 0 , BCP55...
IC = 10 mA, IB = 0 , BCP56-10, -16
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCP54...
IC = 100 µA, IE = 0 , BCP55...
IC = 100 µA, IE = 0 , BCP56-10, -16
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
DC current gain1)
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V, BCP54/BCP55
IC = 150 mA, VCE = 2 V, BCP56-10
IC = 150 mA, VCE = 2 V, BCP54-16...BCP56-16
IC = 500 mA, VCE = 2 V
hFE
25
40
63
100
25
-
-
100
160
-
-
250
160
250
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.5 V
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V
VBE(ON) - - 1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT- 100 - MHz
1Pulse test: t < 300µs; D < 2%
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BCP54...-BCP56...
DC current gain hFE = ƒ(IC)
VCE = 2 V
EHP00268BCP 54...56
3
10 mA
0
10
3
10
5
5
10
0
10
1
10
1
C
FE
h
Ι
2
10
2
10
C
100
5
25
C
-50
C
10
4
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
EHP00271BCP 54...56
CEsat
V
0.4 V 0.8
10
0
10
1
3
10
Ι
C
mA
C
2
10
0.2 0.6
10
4
100
25 C
C
-50
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00270BCP 54...56
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
C
100
25
C
-50
C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
0
10
EHP00269BCP 54...56
A
T
150
-1
4
10
Ι
CBO nA
50 100
0
10
1
10
3
10
C
102
max
typ
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BCP54...-BCP56...
Transition frequency fT = ƒ(IC)
VCE = 10 V
10
EHP00267BCP 54...56
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
55
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
0.4
0.8
1.2
1.6
W
2.4
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
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BCP54...-BCP56...
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2011-10-13
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BCP54...-BCP56...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
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