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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ISL9R30120G2 30 A, 1200 V STEALTHTM Diode Features Description * Stealth Recovery trr = 269 ns (@ IF = 30 A) The ISL9R30120G2 is a STEALTHTM diode optimized for low loss performance in high frequency hard switched applications. The STEALTHTM family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTHTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. * Max Forward Voltage, VF = 3.3 V (@ TC = 25C) * 1200 V Reverse Voltage and High Reliability * Avalanche Energy Rated * RoHS Compliant Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode Package Symbol JEDEC STYLE 2 LEAD TO-247 ANODE CATHODE K CATHODE (BOTTOM SIDE METAL) A Device Maximum Ratings TC = 25C unless otherwise noted Symbol VRRM VRWM VR Parameter Rating 1200 Repetitive Peak Reverse Voltage Unit V Working Peak Reverse Voltage 1200 V DC Blocking Voltage 1200 V A IF(AV) Average Rectified Forward Current (TC = 80oC) 30 IFRM Repetitive Peak Surge Current (20 kHz Square Wave) 70 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) 325 A Power Dissipation 166 W Avalanche Energy (1 A, 40 mH) 20 mJ -55 to 175 C 300 260 C C PD EAVL TJ, TSTG TL TPKG Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s Package Body for 10s, See Application Note AN-7528 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 1 www.fairchildsemi.com ISL9R30120G2 -- STEALTHTM Diode February 2014 Part Number ISL9R30120G2 Top Mark R30120G2 Packing Method Tube Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off State Characteristics IR Instantaneous Reverse Current VR = 1200 V TC = 25C - - 100 A TC = 125C - - 1.0 mA On State Characteristics VF Instantaneous Forward Voltage IF = 30 A TC = 25C - 2.8 3.3 V TC = 125C - 2.6 3.1 V - 115 - pF Dynamic Characteristics CJ Junction Capacitance VR = 10 V, IF = 0 A Switching Characteristics trr Reverse Recovery Time trr Reverse Recovery Time Irr Reverse Recovery Current Qrr Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) Irr Reverse Recovery Current Qrr Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) Irr Reverse Recovery Current Qrr Reverse Recovered Charge dIM/dt IF = 1 A, dI/dt = 100 A/s, VR = 15 V - 45 56 ns IF = 30 A, dI/dt = 100 A/s, VR = 15 V IF = 30 A, dIF/dt = 200 A/s, VR = 780 V, TC = 25C - 80 100 ns - 269 - ns - 7.5 - A - 930 - nC IF = 30 A, dIF/dt = 200 A/s, VR = 780 V, TC = 125C - 529 - ns - 6.2 - - - 11 - A - 3.0 - C IF = 30 A, dIF/dt = 1000 A/s, VR = 780 V, TC = 125C - 260 - ns - 4.8 - - - 30 - A Maximum di/dt during tb - 3.4 - C - 520 - A/s Thermal Characteristics RJC Thermal Resistance Junction to Case TO-247 - - 0.75 C/W RJA Thermal Resistance Junction to Ambient TO-247 - - 30 C/W (c)2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 2 www.fairchildsemi.com ISL9R30120G2 -- STEALTHTM Diode Package Marking and Ordering Information 60 1000 150oC 150oC 40 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 50 125oC 30 100oC 20 25oC 10 0 0.5 1 1.5 2 2.5 3 3.5 125oC 100 100oC 10 75oC 1 25oC 0.1 0.01 0.2 4 0.3 0.4 VF , FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 750 750 VR = 780V, TC = 125oC 0.7 0.8 0.9 1.0 1.1 1.2 VR = 780V, TC = 125oC 625 tb at dIF/dt = 200A/s, 500A/s, 800A/s t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 0.6 Figure 2. Reverse Current vs Reverse Voltage 625 500 375 250 125 0 10 20 30 40 50 tb at IF = 60A, 30A, 15A 500 375 250 125 ta at dIF/dt = 200A/s, 500A/s, 800A/s ta at IF = 60A, 30A, 15A 0 200 0 60 IF , FORWARD CURRENT (A) 40 40 IRR , MAX REVERSE RECOVERY CURRENT (A) dIF/dt = 800A/s dIF/dt = 500A/s 20 dIF/dt = 200A/s 10 0 0 10 20 30 40 50 60 IF , FORWARD CURRENT (A) 800 1000 1200 VR = 780V, TC = 125oC 35 30 25 IF = 60A 20 IF = 30A 15 10 200 IF = 15A 400 600 800 1000 1200 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Maximum Reverse Recovery Current vs Forward Current (c)2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 600 Figure 4. ta and tb Curves vs dIF /dt VR = 780V, TC = 125oC 30 400 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 3. ta and tb Curves vs Forward Current IRR, MAX REVERSE RECOVERY CURRENT (A) 0.5 VR , REVERSE VOLTAGE (KV) Figure 6. Maximum Reverse Recovery Current vs dIF /dt 3 www.fairchildsemi.com ISL9R30120G2 -- STEALTHTM Diode Typical Performance Curves QRR, REVERSE RECOVERED CHARGE (C) VR = 780V, TC = 125oC 8 IF = 60A 7 6 IF = 30A 5 IF = 15A 4 3 200 400 600 800 1000 VR = 780V, TC = 125oC 5.6 4.5 4.0 IF = 30A 3.5 3.0 dIF /dt, CURRENT RATE OF CHANGE (A/s) IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) CJ , JUNCTION CAPACITANCE (pF) f = 1MHZ 1200 1000 800 600 400 200 0.1 1 10 600 800 1000 1200 Figure 8. Reverse Recovery Charge vs dIF/dt 1400 0 0.03 400 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs dIF /dt 1600 IF = 15A 2.5 2.0 200 1200 IF = 60A 5.0 100 -14 400 IF = 30A, VR = 780V, dIF /dt = 500A/s IRM(REC) -16 350 -18 300 -20 250 t, RECOVERY TIMES (ns) S, REVERSE RECOVERY SOFTNESS FACTOR 6.0 9 tRR -22 25 VR , REVERSE VOLTAGE (V) 50 75 100 125 200 150 TC, CASE TEMPERATURE (oC) Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. Maximum Reverse Recovery Current and trr vs Case Temperature Average Forward Current, IF(AV) [A] 80 60 40 20 0 25 50 75 100 125 150 o Case temperature, TC [ C] 175 Figure 11. DC Current Derating Curve (c)2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 4 www.fairchildsemi.com ISL9R30120G2 -- STEALTHTM Diode Typical Performance Curves (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 ZJA, NORMALIZED THERMAL IMPEDANCE 1.0 PDM 0.1 t1 SINGLE PULSE 0.01 10-5 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 12. Normalized Maximum Transient Thermal Impedance Test Circuit and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG VGE CURRENT SENSE trr dt ta 0 tb + - MOSFET t1 dIF 0.25 IRM VDD IRM t2 Figure 13. trr Test Circuit Figure 14. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) Q1 L CURRENT SENSE VAVL R + VDD IL VDD DUT t0 Figure 15. Avalanche Energy Test Circuit (c)2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 IL I V t1 t2 t Figure 16. Avalanche Current and Voltage Waveforms 5 www.fairchildsemi.com ISL9R30120G2 -- STEALTHTM Diode Typical Performance Curves (Continued) ISL9R30120G2 -- STEALTHTM Diode Mechanical Dimensions TO-247 2L Figure 17. TO-247,Molded, 2LD, Jedec Option AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-002. (c)2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 6 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 7 www.fairchildsemi.com ISL9R30120G2 -- STEALTHTM Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-LockTM F-PFSTM AccuPowerTM (R) FRFET(R) AX-CAP(R)* (R)* (R) Global Power ResourceSM PowerTrench BitSiCTM GreenBridgeTM PowerXSTM Build it NowTM TinyBoost(R) Green FPSTM Programmable Active DroopTM CorePLUSTM TinyBuck(R) (R) Green FPSTM e-SeriesTM QFET CorePOWERTM TinyCalcTM QSTM GmaxTM CROSSVOLTTM TinyLogic(R) Quiet SeriesTM GTOTM CTLTM TINYOPTOTM RapidConfigureTM IntelliMAXTM Current Transfer LogicTM TinyPowerTM ISOPLANARTM DEUXPEED(R) TM TinyPWMTM Dual CoolTM Marking Small Speakers Sound Louder TinyWireTM Saving our world, 1mW/W/kW at a timeTM EcoSPARK(R) and BetterTM TranSiCTM EfficentMaxTM SignalWiseTM MegaBuckTM TriFault DetectTM ESBCTM SmartMaxTM MICROCOUPLERTM TRUECURRENT(R)* SMART STARTTM MicroFETTM (R) SerDesTM Solutions for Your SuccessTM MicroPakTM SPM(R) MicroPak2TM Fairchild(R) (R) STEALTHTM MillerDriveTM Fairchild Semiconductor UHC(R) SuperFET(R) MotionMaxTM FACT Quiet SeriesTM (R) Ultra FRFETTM (R) SuperSOTTM-3 mWSaver FACT UniFETTM OptoHiTTM SuperSOTTM-6 FAST(R) (R) VCXTM OPTOLOGIC SuperSOTTM-8 FastvCoreTM (R) (R) VisualMaxTM OPTOPLANAR SupreMOS FETBenchTM VoltagePlusTM SyncFETTM FPSTM XSTM ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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