DS13001 Rev. D-2 1 of 2 1N5817M/1N5818M/1N5819M
www.diodes.com ã Diodes Incorporated
·High Current Capability
·Low Forward Voltage Drop
·Guard Ring for Transient Protection
·Glass Package for High Reliability
·Packaged for Surface Mount Applications
Mechanical Data
·Case: MELF, Glass
·Terminals: Solderable per MIL-STD-202,
Method 208
·Polarity: Cathode band
·Approx Weight: 0.25 gram
·Mounting Position: Any
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
1N5817M / 1N5818M / 1N5819M
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIER
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Measured at VR = 4.0V, f = 1.0MHz.
Characteristic Symbol 1N5817M 1N5818M 1N5819M Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 30 40 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Maximum Average Forward Rectified Current
@TT = 90°C (Note 1) IO1.0 A
Maximum Forward Surge Current. Half Cycle @60Hz
Superimposed on rated load, JEDEC Method IFSM 25 A
Maximum Forward Voltage Drop @ IF = 1.0A
@ IF = 3.0A VF0.450
0.750 0.550
0.875
0.600
0.900 V
Maximum Reverse Leakage Current @ VRRM
@ TA = 25°C
@ TA = 100°C IR1.0
10 mA
Typical Thermal Resistance, Junction to Ambient (Note 1) RqJA 130 K/W
Typical Junction Capacitance (Note 2) Cj110 pF
Storage and Operating Temperature Range Tj,T
STG -60 to +125 °C
MELF
Dim Min Max
A4.80 5.20
B2.40 2.60
C0.55 Nominal
All Dimensions in mm
C
A
B
Features
SPICE MODELS: 1N5817M 1N5818M 1N5819M