DSS6-0025BS
preliminary
Low Loss and Soft Recovery
High Performance Schottky Diode
Single Diode
Schottky Diode
4
1
3
Part number
DSS6-0025BS
Marking on Product: 6Y025AS
Backside: cathode
FAV
F
VV0.3
RRM
6
25
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-252 (DPak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSS6-0025BS
preliminary
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.40
R3K/
W
R
min.
6
V
RSM
V
5T = 25°C
VJ
T = °C
VJ
m
A
40V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
140
P
tot
40
W
T = 25°C
C
RK/
W
6
25
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
0.47
T = 25°C
VJ
100
V
F0
V
0.18T = °C
VJ
150
r
F
15.9 m
Ω
V
0.30T = °C
VJ
I = A
F
V
6
0.40
I = A
F
12
I = A
F
12
threshold voltage
slope resistance for power loss calculation only
m
A
125
V
RRM
V
25
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
639
j
unction capacitance V = V5 T = 25°Cf = 1 MHz
RVJ
p
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
150
120
A
25
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
25
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSS6-0025BS
preliminary
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Ratings
Z Y Y WW
Logo
Part number
A
ssembly Line
abcdefg
P
r
odu
c
tM
a
r
ki
n
g
IXYS
Date Code
Package
T
op
°C
T
VJ
°C150
virt ua l j un ctio n temp eratu re -55
Weight g0.3
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 20 A
per terminal
125-55
TO-252
(
DPak
)
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSS6-0025BS 499064Tape & Reel 25006Y025ASStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.18
mΩ
V
0 max
R
0 max
slope resistance * 12.8
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSS6-0025BS
preliminary
4
1
3
Outlines TO-252 (DPak)
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved