MX0912B351Y,114 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of November 1994 1997 Feb 19

DISCRETE SEMICONDUCTORS

MX0912B351Y

NPN microwave power transistor

1997 Feb 19 2

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MX0912B351Y

FEATURES

•Interdigitated structure; high emitter efficiency

•Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

•Gold metallization realizes very stable characteristics

and excellent lifetime

•Multicell geometry gives good balance of dissipated

power and low thermal resistance

•Input and output matching cell allows an easier design

of circuits.

APPLICATIONS

Intended for use in common base class C broadband

pulse power amplifier from 960 to 1215 MHz for TACAN

application.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a SOT439A metal ceramic flange package, with base

connected to flange. It is mounted in common base

configuration and specified in class C.

PINNING - SOT439A

PIN DESCRIPTION

1 collector

2 emitter

3 base connected to ﬂange

Fig.1 Simplified outline and symbol.

lumns

MAM045

Top view

QUICK REFERENCE DATA

Microwave performance up to Tmb =25°C in a common base class C broadband ampliﬁer.

MODE OF

OPERATION f

(GHz) VCC

(V) PL

(W) Gpo

(dB) ηC

(%) Zi/ZL

(Ω)

Class C

tp=10µs; δ= 10% 0.960 to 1.215 50 >325 >7 >40 see Figs 7 and 8

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1997 Feb 19 3

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MX0912B351Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Up to 0.2 mm from ceramic.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −65 V

VCES collector-emitter voltage RBE =0Ω−60 V

VCEO collector-emitter voltage open base −20 V

VEBO emitter-base voltage open collector −3V

Ccollector current tp≤10 µs; δ≤10% −21 A

Ptot total power dissipation

(peak power) Tmb =75°C; tp≤10 µs; δ≤10% −960 W

Tstg storage temperature −65 +200 °C

Tjoperating junction temperature −200 °C

Tsld soldering temperature t ≤10 s; note 1 −235 °C

Fig.2 Maximum power dissipation derating as a

function of mounting base temperature.

tp=10µs; δ= 10%; Ptot max = 960 W.

handbook, halfpage

−50 200

1000

200

400

600

800

Ptot

(W)

100 Tmb (°C)

MGL054

1997 Feb 19 4

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MX0912B351Y

THERMAL CHARACTERISTICS

Tj= 125 °C unless otherwise speciﬁed.

Notes

1. See “

Mounting recommendations in the General part of handbook SC19a”

2. Equivalent thermal impedance under nominal pulse microwave operating conditions.

CHARACTERISTICS

Tmb =25°C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb =25°C measured in the test circuit as shown in Fig.6 and working in class C

broadband in pulse mode; note 1.

Notes

1. Operating conditions and performance for other pulse formats can be made available on request.

2. VCC during pulse.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Rth j-mb thermal resistance from junction to mounting base CW 1.7 K/W

Rth mb-h thermal resistance from mounting base to heatsink CW; note 1 0.2 K/W

Zth j-h thermal impedance from junction to heatsink tp=10µs; δ= 10%

notes 1 and 2 0.13 K/W

SYMBOL PARAMETER CONDITIONS MAX. UNIT

ICBO collector cut-off current VCB =65V; I

E= 0 140 mA

VCB =50V; I

E= 0 14 mA

ICES collector cut-off current VCE =60V; R

BE =0Ω140 mA

IEBO emitter cut-off current VEB = 1.5 V; IC= 0 1.4 mA

MODE OF OPERATION f

(GHz) VCC

(V)(2) PL

(W) Gpo

(dB) ηC

(%) Zi/ZL

(Ω)

Class C;

tp=10µs; δ= 10% 0.960 to 1.215 50 >325

typ. 375 >7

typ. 7.6 >40

typ. 47 see Figs 7 and 8

tp= 300 µs; δ= 10%;

see Fig.5 1.03 to 1.09 50 typ. 350 typ. 8 typ. 48

1997 Feb 19 5

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MX0912B351Y

Fig.3 Load power as a function of frequency.

(In broadband test circuit as shown in Fig.6)

VCC = 50 V; tp=10µs; δ= 10%.

handbook, halfpage

0.95 1.05 1.15 1.25

f (GHz)

(W)

450

350

400

MGL056

Fig.4 Collector efficiency as a function of

frequency. (In broadband test circuit as

shown in Fig.6)

handbook, halfpage

0.95 1.05 1.15 1.25

f (GHz)

ηC

(%)

MGL055

1997 Feb 19 6

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MX0912B351Y

List of components

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L1 0.65 mm diameter copper wire −total length = 12 mm;

height of loop = 9 mm −

L2 4 turns 0.65 mm diameter

copper wire −int. diameter. 3 mm;

L=5mm −

C1 DC block 100 pF ATC, ref. 100A101KP50X

C2 tantalum capacitor 10 µF; 50 V

C3 electrolytic capacitor 470 µF; 63 V

C4 feedthrough bypass capacitor Erie, ref. 1250-003

C5, C6 variable gigatrim capacitor 0.8 to 8 pF Tekelec, ref. 729.1

Fig.5 Pulse definition.

handbook, full pagewidth

MGK066

300 µs

1 µs

3 ms

1997 Feb 19 7

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MX0912B351Y

Fig.6 Broadband test circuit.

Dimensions in mm.

Substrate: Epsilam 10.

Thickness: 0.635 mm.

Permittivity: εr= 10.

handbook, full pagewidth

MLC085

3030

15 2535

0.635

1.55.5 5 3.5 7.5 3.5 1

2.5

3.2

50.7

21.5

4.5

handbook, full pagewidth

MLC086

C3 VCC

C5 C6

1997 Feb 19 8

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MX0912B351Y

Fig.7 Input impedance as a function of frequency associated with optimum load impedance.

VCC = 50 V; Zo=5Ω; PL= 325 W.

handbook, full pagewidth

MGL057

0.2

0.5

0.2

0.5

∞

00.2 0.5 1 2 5 10

+ j

− j

1.215 GHz

0.960 GHz

Fig.8 Optimum load impedance as a function of frequency associated with input impedance.

VCC = 50 V; Zo=5Ω; PL= 325 W.

handbook, full pagewidth

MGL058

0.2

0.5

0.2

0.5

∞

00.2 0.5 1 2 5 10

+ j

− j

1.215 GHz

0.960 GHz

1997 Feb 19 9

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MX0912B351Y

PACKAGE OUTLINE

Fig.9 SOT439A.

Dimensions in mm.

Torque on screws: max. 0.4 Nm.

Recommended screw: M3.

Recommended pitch for mounting screws: 19 mm.

handbook, full pagewidth

0.15 max

3.3

2.9

12.85 max

max

1.6 max

23 max3

seating plane

MBC881

3.7

max

2.7

min

10.3

10.0

9.85

max

2.7

min

8.25

16.5

3.3

1997 Feb 19 10

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MX0912B351Y

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1997 Feb 19 11

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MX0912B351Y

NOTES

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 19 Document order number: 9397 750 01694