4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 1 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
EL817-G Series
Features:
• Halogens free.
• Current transfer ratio
(CTR: 50~600% at IF =5mA, VCE =5V)
• High isolation voltage between input
and output (Viso=5000 V rms )
• Creepage distance >7.62 mm
• Operating temperature up to +110°C
• Compact small outline package
• Pb free and RoHS compliant.
• UL approved (No. E214129)
• VDE approved (No. 132249)
• SEMKO approved (No. 716108)
• NEMKO approved (No. P06206474)
• DEMKO approved (No. 313924)
• FIMKO approved (No. FI 22807)
• CSA approved (No. 1143601)
• CQC approved (No. 08001022762 /No. 08001022757)
Description
The EL817 series of devices each consist of an infrared
emitting diodes, optically coupled to a phototransistor
detector encapsulated with green compound.
The devices are in a 4-pin DIP package and available in
wide-lead spacing and SMD option.
Schematic
Applications
• Programmable controllers
• System appliances, measuring instruments
• Telecommunication equipments
• Home appliances, such as fan heaters, etc.
• Signal transmission between circuits of different potentials and impedances
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 2 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
EL817-G Series
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Rating Unit
Forward current IF 50 mA
Peak forward current (1us, pulse) IFP 1 A
Reverse voltage VR 6 V
Input
Power dissipation
No derating required up to Ta = 100°C PD 70 mW
150 mW
Power dissipation
Derating factor (above Ta = 80°C) PC 5.8 mW/°C
Collector current IC 50 mA
Collector-Emitter voltage VCEO 80 V
Output
Emitter-Collector voltage VECO 7 V
Total power dissipation PTOT 200 mW
Isolation voltage *1 V
ISO 5000 V rms
Operating temperature TOPR -55 ~ +110 °C
Storage temperature TSTG -55 ~ +125 °C
Soldering temperature *2 T
SOL 260 °C
Notes
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1 & 2 are shorted together, and pins 3 & 4
are shorted together.
*2 For 10 seconds.
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 3 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
EL817-G Series
Electrical Characteristics (Ta=25°C unless specified otherwise)
Input Parameter Symbol Min. Typ.* Max. Unit Condition
Forward voltage VF - 1.2 1.4 V
IF = 20mA
Reverse current IR - - 10 µA
VR = 4V
Input capacitance Cin - 30 250 pF V = 0, f = 1kHz
Output Parameter Symbol Min. Typ.* Max. Unit Condition
Collector-Emitter dark
current ICEO - - 100 µA
VCE = 20V, IF = 0mA
Collector-Emitter
breakdown voltage BVCEO 80 - - V IC = 0.1mA
Emitter-Collector
breakdown voltage BVECO 7 - - V
IE = 0.1mA
Transfer Characteristics (Ta=25°C unless specified otherwise)
Parameter Symbol Min. Typ.* Max. Unit Condition
EL817 50 - 600
EL817A 80 - 160
EL817B 130 - 260
EL817C 200 - 400
Current Transfer
ratio
EL817D
CTR
400 - 600
% IF = 5mA ,VCE = 5V
Collector-Emitter
saturation voltage VCE(sat) - 0.1 0.2 V IF = 1mA ,IC = 20mA
Isolation resistance RIO 5×1010 - -
Ω VIO = 500Vdc,
40~60% R.H.
Floating capacitance CIO - 0.6 1.0 pF
VIO = 0, f = 1MHz
Cut-off frequency fc - 80 - kHz VCE = 5V, IC = 2mA
RL = 100Ω, -3dB
Rise time tr - 6 18
µs
Fall time t
f
- 8 18
µ
s
VCE = 2V, IC = 2mA,
RL = 100Ω
* Typical values at Ta = 25°C
PIN DIP 4
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 4 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
PHOTOTRANSISTOR
EL817-G Series
Typical Performance Curves
PIN DIP 4
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 5 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
PHOTOTRANSISTOR
EL817-G Series
VCC
Figure 10. Switching Time Test Circuit & Waveforms
IF IC RL
RIN
Output
Input
Pulse
10%
Input Output
Pulse 90%
t t
r
f
ton tof
f
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 6 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
EL817-G Series
Order Information
Part Number
EL817(X)(Y)(Z)-FVG
Note
X = Lead form option (S, S1, M or none)
Y = CTR Rank (A, B, C, D or none)
Z = Tape and reel option (TA, TB ,TU, TD or none).
F = Lead frame option (F: Iron, None: copper)
V = VDE (option)
G = Halogens free
Option Description Packing quantity
None Standard DIP-4 100 units per tube
M Wide lead bend (0.4 inch spacing) 100 units per tube
S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel
S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel
S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel
S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel
S (TU) Surface mount lead form + TU tape & reel option 1500 units per reel
S (TD) Surface mount lead form + TD tape & reel option 1500 units per reel
S1 (TU) Surface mount lead form (low profile) + TU tape & reel option 1500 units per reel
S1 (TD) Surface mount lead form (low profile) + TD tape & reel option 1500 units per reel
4 PIN DIP PHOTOTRANSISTOR
Everlight Electronics Co., Ltd. 7 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
EL817-G Series
PHOTOCOUPLER
Package Drawing
(Dimensions in mm)
Standard DIP Type
Option M Type
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL817-G Series
Option S Type
Option S1 Type
Everlight Electronics Co., Ltd. 8 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 9 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
EL817-G Series
Recommended pad layout for surface mount leadform
Device Marking
817
EL
G R YWW V
Notes
EL denotes EVERLIGHT
817 denotes Device Number
F denotes Factory Code (None: China , G: China and Green part)
R denotes CTR Rank (A, B, C, D or none)
Y denotes 1 digit Year code
WW denotes 2 digit Week code
V denotes VDE
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 10 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
EL817-G Series
Tape & Reel Packing Specifications
Option TA Option TB
Direction of feed from reel Direction of feed from reel
Tape dimensions
Dimension No. A B Do D1 E F
Dimension(mm) 10.4±0.1 4.55±0.1 1.5±0.1 1.5±0.05 1.75±0.1 7.5±0.1
Dimension No. Po P1 P2 t W K
Dimension(mm) 4.0±0.1 12.0±0.1 2.0±0.1 0.33±0.1 16.0+0.3/
-0.1 4.55±0.1
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 11 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
EL817-G Series
Option TD
Direction of feed from reel
Option TU
Direction of feed from reel
Tape dimensions
Dimension No. A B C D E F
Dimension(mm) 16.00±0.3 7.5±0.1 1.75±0.1 8.0±0.1 2.0±0.1 4.0±0.1
Dimension No. G H I J K
Dimension(mm) 1.5+0.1/-0 10.4±0.1 0.4±0.05 4.55±0.1 5.1±0.1
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 12 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
EL817-G Series
Solder Reflow Temperature Profile
260 °C
(p
eak
)
1
50
°
C
1-
3
°
M
x
7
0
–
17
0
S
ec
2
00
°
C
217°
C
>255 °C
(
30s Min
)
1-
3
°
M
x
6
0
–
14
0
S
ec
TIME
(S)
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 13 http://www.everlight.com
Document No：PDS-ELST-817G Rev. 0 April ,18 2008
EL817-G Series
DISCLAIMER
1. The specifications in this datasheet may be changed without notice. EVERLIGHT reserves the authority
on material change for above specification.
2. When using this product, please observe the absolute maximum ratings and the instructions for use as
outlined in this datasheet. EVERLIGHT assumes no responsibility for any damage resulting from use of
the product which does not comply with the absolute maximum ratings and the instructions included in this
datasheet.
3. These specification sheets include materials protected under copyright of EVERLIGHT. Reproduction in
any form is prohibited without the specific consent of EVERLIGHT.