SST26VF016B 2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory Features * Single Voltage Read and Write Operations - 2.7-3.6V or 2.3-3.6V * Serial Interface Architecture - Nibble-wide multiplexed I/O's with SPI-like serial command structure - Mode 0 and Mode 3 - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol * High Speed Clock Frequency - 2.7-3.6V: 104 MHz max - 2.3-3.6V: 80 MHz max * Burst Modes - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around * Superior Reliability - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention * Low Power Consumption: - Active Read current: 15 mA (typical @ 104 MHz) - Standby Current: 15 A (typical) * Fast Erase Time - Sector/Block Erase: 18 ms (typ), 25 ms (max) - Chip Erase: 35 ms (typ), 50 ms (max) * Page-Program - 256 Bytes per page in x1 or x4 mode * End-of-Write Detection - Software polling the BUSY bit in status register * Flexible Erase Capability - Uniform 4 KByte sectors - Four 8 KByte top and bottom parameter overlay blocks - One 32 KByte top and bottom overlay blocks - Uniform 64 KByte overlay blocks * Write-Suspend - Suspend Program or Erase operation to access another block/sector * Software Reset (RST) mode * Software Write Protection - Individual-Block Write Protection with permanent lock-down capability - 64 KByte blocks, two 32 KByte blocks, and eight 8 KByte parameter blocks - Read Protection on top and bottom 8 KByte parameter blocks 2014-2017 Microchip Technology Inc. * Security ID - One-Time Programmable (OTP) 2 KByte, Secure ID - 64 bit unique, factory pre-programmed identifier - User-programmable area * Temperature Range - Industrial: -40C to +85C - Extended: -40C to +105C * Automotive AECQ-100 Grade 2 and Grade 3 * Packages Available - 8-contact WDFN (6mm x 5mm) - 8-lead SOIJ (5.28 mm) - 8-lead SOIC (3.90 mm) * All devices are RoHS compliant Product Description The Serial Quad I/OTM (SQITM) family of flash-memory devices features a six-wire, 4-bit I/O interface that allows for low-power, high-performance operation in a low pin-count package. SST26VF016B also supports full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. System designs using SQI flash devices occupy less board space and ultimately lower system costs. All members of the 26 Series, SQI family are manufactured with proprietary, high-performance CMOS SuperFlash(R) technology. The split-gate cell design and thickoxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. SST26VF016B significantly improves performance and reliability, while lowering power consumption. These devices write (Program or Erase) with a single power supply of 2.3-3.6V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. SST26VF016B is offered in 8-contact WDFN (6 mm x 5 mm), 8-lead SOIJ (5.28 mm), and 8-lead SOIC (3.90 mm). See Figures 2-1 through 2-3 for pin assignments. DS20005262D-page 1 SST26VF016B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via Email at docerrors@microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at: http://www.microchip.com You can determine the version of a data sheet by examining its literature number found on the bottom outside corner of any page. The last character of the literature number is the version number, (e.g., DS30000000A is version A of document DS30000000). Errata An errata sheet, describing minor operational differences from the data sheet and recommended workarounds, may exist for current devices. As device/documentation issues become known to us, we will publish an errata sheet. The errata will specify the revision of silicon and revision of document to which it applies. To determine if an errata sheet exists for a particular device, please check with one of the following: * Microchip's Worldwide Web site; http://www.microchip.com * Your local Microchip sales office (see last page) When contacting a sales office, please specify which device, revision of silicon and data sheet (include literature number) you are using. Customer Notification System Register on our web site at www.microchip.com to receive the most current information on all of our products. DS20005262D-page 2 2014-2017 Microchip Technology Inc. SST26VF016B 1.0 BLOCK DIAGRAM FIGURE 1-1: FUNCTIONAL BLOCK DIAGRAM OTP Address Buffers and Latches X - Decoder SuperFlash Memory Y - Decoder Page Buffer, I/O Buffers and Data Latches Control Logic Serial Interface WP# HOLD# SCK CE# SIO [3:0] 20005262 B1.0 2014-2017 Microchip Technology Inc. DS20005262D-page 3 SST26VF016B 2.0 PIN DESCRIPTION FIGURE 2-1: PIN DESCRIPTION FOR 8-LEAD SOIJ CE# 1 8 VDD SO/SIO1 2 7 HOLD/SIO3 WP#/SIO2 3 6 SCK VSS 4 5 SI/SIO0 Top View FIGURE 2-3: CE# 1 SO/SIO1 2 8 VDD 7 HOLD/SIO3 Top View WP#/SIO2 3 6 SCK VSS 4 5 SI/SIO0 20005262 08-soij S2A P1.0 FIGURE 2-2: PIN DESCRIPTION FOR 8LEAD SOIC 20005262 08-soic SA P1.0 PIN DESCRIPTION FOR 8-CONTACT WDFN CE# 1 SO/SIO1 2 8 VDD 7 HOLD/SIO3 Top View WP#/SIO2 3 6 SCK VSS 4 5 SI/SIO0 20005262 08-wson QA P1.0 TABLE 2-1: PIN DESCRIPTION Symbol Pin Name Functions SCK Serial Clock To provide the timing of the serial interface. Commands, addresses, or input data are latched on the rising edge of the clock input, while output data is shifted out on the falling edge of the clock input. SIO[3:0] Serial Data Input/Output To transfer commands, addresses, or data serially into the device or data out of the device. Inputs are latched on the rising edge of the serial clock. Data is shifted out on the falling edge of the serial clock. The Enable Quad I/O (EQIO) command instruction configures these pins for Quad I/O mode. SI Serial Data Input for SPI mode To transfer commands, addresses or data serially into the device. Inputs are latched on the rising edge of the serial clock. SI is the default state after a power on reset. SO Serial Data Output for SPI mode To transfer data serially out of the device. Data is shifted out on the falling edge of the serial clock. SO is the default state after a power on reset. CE# Chip Enable The device is enabled by a high to low transition on CE#. CE# must remain low for the duration of any command sequence; or in the case of Write operations, for the command/data input sequence. WP# Write Protect The WP# is used in conjunction with the WPEN and IOC bits in the Configuration register to prohibit write operations to the Block-Protection register. This pin only works in SPI, single-bit and dual-bit Read mode. HOLD# Hold Temporarily stops serial communication with the SPI Flash memory while the device is selected. This pin only works in SPI, single-bit and dual-bit Read mode and must be tied high when not in use. VDD Power Supply To provide power supply voltage. VSS Ground DS20005262D-page 4 2014-2017 Microchip Technology Inc. SST26VF016B 3.0 MEMORY ORGANIZATION The SST26VF016B SQI memory array is organized in uniform, 4 KByte erasable sectors with the following erasable blocks: eight 8 KByte parameter, two 32 KByte overlay, and thirty 64 KByte overlay blocks. See Figure 3-1. FIGURE 3-1: MEMORY MAP Top of Memory Block 8 KByte 8 KByte 8 KByte 8 KByte 32 KByte ... 64 KByte 2 Sectors for 8 KByte blocks 8 Sectors for 32 KByte blocks 16 Sectors for 64 KByte blocks 64 KByte ... 4 KByte 4 KByte 4 KByte 4 KByte 64 KByte 32 KByte 8 KByte 8 KByte 8 KByte 8 KByte Bottom of Memory Block 20005262 F41.0 2014-2017 Microchip Technology Inc. DS20005262D-page 5 SST26VF016B 4.0 DEVICE OPERATION SST26VF016B supports both Serial Peripheral Interface (SPI) bus protocol and a 4-bit multiplexed SQI bus protocol. To provide backward compatibility to traditional SPI Serial Flash devices, the device's initial state after a power-on reset is SPI mode which supports multi-I/O (x1/x2/x4) Read/Write commands. A command instruction configures the device to SQI mode. The dataflow in the SQI mode is similar to the SPI mode, except it uses four multiplexed I/O signals for command, address, and data sequence. bus master is in stand-by mode and no data is being transferred. The SCK signal is low for Mode 0 and SCK signal is high for Mode 3. For both modes, the Serial Data I/O (SIO[3:0]) is sampled at the rising edge of the SCK clock signal for input, and driven after the falling edge of the SCK clock signal for output. The traditional SPI protocol uses separate input (SI) and output (SO) data signals as shown in Figure 4-1. The SQI protocol uses four multiplexed signals, SIO[3:0], for both data in and data out, as shown in Figure 4-2. This means the SQI protocol quadruples the traditional bus transfer speed at the same clock frequency, without the need for more pins on the package. SQI Flash Memory supports both Mode 0 (0,0) and Mode 3 (1,1) bus operations. The difference between the two modes is the state of the SCK signal when the FIGURE 4-1: SPI PROTOCOL (TRADITIONAL 25 SERIES SPI DEVICE) CE# SCK MODE 3 MODE 3 MODE 0 MODE 0 Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 SI MSB SO HIGH IMPEDANCE DON'T CARE Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 MSB FIGURE 4-2: 20005262 F03.0 SQI SERIAL QUAD I/O PROTOCOL CE# MODE 3 MODE 3 CLK MODE 0 SIO(3:0) MODE 0 C1 C0 A5 A4 A3 A2 A1 A0 H0 L0 H1 L1 H2 L2 H3 L3 MSB 20005262 F04.0 4.1 Device Protection SST26VF016B offers a flexible memory protection scheme that allows the protection state of each individual block to be controlled separately. In addition, the Write-Protection Lock-Down register prevents any change of the lock status during device operation. To avoid inadvertent writes during power-up, the device is write-protected by default after a power-on reset cycle. A Global Block-Protection Unlock command offers a single command cycle that unlocks the entire memory array for faster manufacturing throughput. For extra protection, there is an additional non-volatile register that can permanently write-protect the BlockProtection register bits for each individual block. Each of the corresponding lock-down bits are one time programmable (OTP)--once written, they cannot be erased. Data that had been previously programmed into these blocks cannot be altered by programming or erase and is not reversible DS20005262D-page 6 4.1.1 INDIVIDUAL BLOCK PROTECTION SST26VF016B has a Block-Protection register which provides a software mechanism to write-lock the individual memory blocks and write-lock, and/or read-lock, the individual parameter blocks. The Block-Protection register is 48 bits wide: two bits each for the eight 8 KByte parameter blocks (write-lock and read-lock), and one bit each for the remaining 32 KByte and 64 KByte overlay blocks (write-lock). See Table 5-6 for address range protected per register bit. Each bit in the Block-Protection register (BPR) can be written to a `1' (protected) or `0' (unprotected). For the parameter blocks, the most significant bit is for readlock, and the least significant bit is for write-lock. Readlocking the parameter blocks provides additional security for sensitive data after retrieval (e.g., after initial boot). If a block is read-locked all reads to the block return data 00H. 2014-2017 Microchip Technology Inc. SST26VF016B The Write Block-Protection Register command is a two-cycle command which requires that Write-Enable (WREN) is executed prior to the Write Block-Protection Register command. The Global Block-Protection Unlock command clears all write protection bits in the Block-Protection register. 4.1.2 Writing a `0' in any location in the nVWLDR has no effect on either the nVWLDR or the corresponding Write-Lock bit in the BPR. Note that if the Block-Protection register had been previously locked down, see "Write-Protection Lock-Down (Volatile)", the device must be power cycled before using the nVWLDR. If the Block-Protection register is locked down and the Write nVWLDR command is accessed, the command will be ignored. WRITE-PROTECTION LOCK-DOWN (VOLATILE) To prevent changes to the Block-Protection register, use the Lock-Down Block-Protection Register (LBPR) command to enable Write-Protection Lock-Down. Once Write-Protection Lock-Down is enabled, the Block-Protection register can not be changed. To avoid inadvertent lock down, the WREN command must be executed prior to the LBPR command. 4.2 To reset Write-Protection Lock-Down, performing a power cycle on the device is required. The Write-Protection LockDown status may be read from the Status register. 4.1.3 WRITE-LOCK LOCK-DOWN (NONVOLATILE) The non-Volatile Write-Lock Lock-Down register is an alternate register that permanently prevents changes to the block-protect bits. The non-Volatile Write-Lock Lock-Down register (nVWLDR) is 40 bits wide per device: one bit each for the eight 8-KByte parameter blocks, and one bit each for the remaining 32 KByte and 64 KByte overlay blocks. See Table 5-6 for address range protected per register bit. The hardware Write Protection pin (WP#) is used in conjunction with the WPEN and IOC bits in the configuration register to prohibit write operations to the Block-Protection and Configuration registers. The WP# pin function only works in SPI single-bit and dual-bit read mode when the IOC bit in the configuration register is set to `0'. The WP# pin function is disabled when the WPEN bit in the configuration register is `0'. This allows installation of SST26VF016B in a system with a grounded WP# pin while still enabling Write to the Block-Protection register. The Lock-Down function of the Block-Protection Register supersedes the WP# pin, see Table 41 for Write Protection Lock-Down states. The factory default setting at power-up of the WPEN bit is `0', disabling the Write Protect function of the WP# after power-up. WPEN is a non-volatile bit; once the bit is set to `1', the Write Protect function of the WP# pin continues to be enabled after power-up. The WP# pin only protects the Block-Protection Register and Configuration Register from changes. Therefore, if the WP# pin is set to low before or after a Program or Erase command, or while an internal Write is in progress, it will have no effect on the Write command. Writing `1' to any or all of the nVWLDR bits disables the change mechanism for the corresponding Write-Lock bit in the BPR, and permanently sets this bit to a `1' (protected) state. After this change, both bits will be set to `1', regardless of the data entered in subsequent writes to either the nVWLDR or the BPR. Subsequent writes to the nVWLDR can only alter available locations that have not been previously written to a `1'. This method provides write-protection for the corresponding memory-array block by protecting it from future program or erase operations. TABLE 4-1: Hardware Write Protection The IOC bit takes priority over the WPEN bit in the configuration register. When the IOC bit is `1', the function of the WP# pin is disabled and the WPEN bit serves no function. When the IOC bit is `0' and WPEN is `1', setting the WP# pin active low prohibits Write operations to the Block Protection Register. WRITE PROTECTION LOCK-DOWN STATES WP# IOC WPEN WPLD Execute WBPR Instruction Configuration Register L 0 1 1 Not Allowed Protected L 0 0 1 Not Allowed Writable L 0 1 0 Not Allowed Protected L 01 02 0 Allowed Writable H 0 X 1 Not Allowed Writable H 0 X 0 Allowed Writable X 1 X 1 Not Allowed Writable 1 2 0 Allowed Writable X 0 1. Default at power-up Register settings 2. Factory default setting is `0'. This is a non-volatile bit; default at power-up is the value set prior to power-down. 2014-2017 Microchip Technology Inc. DS20005262D-page 7 SST26VF016B 4.3 Security ID SST26VF016B offers a 2 KByte Security ID (Sec ID) feature. The Security ID space is divided into two parts - one factory-programmed, 64-bit segment and one user-programmable segment. The factory-programmed segment is programmed during part manufacture with a unique number and cannot be changed. The user-programmable segment is left unprogrammed for the customer to program as desired. Use the Program Security ID (PSID) command to program the Security ID using the address shown in Table 5-5. The Security ID can be locked using the Lockout Security ID (LSID) command. This prevents any future write operations to the Security ID. The factory-programmed portion of the Security ID can't be programmed by the user; neither the factoryprogrammed nor user-programmable areas can be erased. 4.4 Hold Operation The HOLD# pin pauses active serial sequences without resetting the clocking sequence. This pin is active after every power up and only operates during SPI single-bit and dual-bit modes. SST26VF016B ships FIGURE 4-3: with the IOC bit set to `0' and the HOLD# pin function enabled. The HOLD# pin is always disabled in SQI mode and only works in SPI single-bit and dual-bit read mode. To activate the Hold mode, CE# must be in active low state. The Hold mode begins when the SCK active low state coincides with the falling edge of the HOLD# signal. The Hold mode ends when the HOLD# signal's rising edge coincides with the SCK active low state. If the falling edge of the HOLD# signal does not coincide with the SCK active low state, then the device enters Hold mode when the SCK next reaches the active low state. Similarly, if the rising edge of the HOLD# signal does not coincide with the SCK active low state, then the device exits Hold mode when the SCK next reaches the active low state. See Figure 4-3. Once the device enters Hold mode, SO will be in high impedance state while SI and SCK can be VIL or VIH. If CE# is driven active high during a Hold condition, it resets the internal logic of the device. As long as HOLD# signal is low, the memory remains in the Hold condition. To resume communication with the device, HOLD# must be driven active high, and CE# must be driven active low. HOLD CONDITION WAVEFORM. SCK HOLD# Active Hold Active Hold Active 20005262 F46.0 DS20005262D-page 8 2014-2017 Microchip Technology Inc. SST26VF016B 4.5 Status Register The Status register is a read-only register that provides the following status information: whether the flash memory array is available for any Read or Write operation, if the device is write-enabled, whether an erase or program operation is suspended, and if the Block- TABLE 4-2: Protection register and/or Security ID are locked down. During an internal Erase or Program operation, the Status register may be read to determine the completion of an operation in progress. Table 4-2 describes the function of each bit in the Status register. STATUS REGISTER Default at Power-up Read/Write (R/W) Write operation status 1 = Internal Write operation is in progress 0 = No internal Write operation is in progress 0 R WEL Write-Enable Latch status 1 = Device is write-enabled 0 = Device is not write-enabled 0 R 2 WSE Write Suspend-Erase status 1 = Erase suspended 0 = Erase is not suspended 0 R 3 WSP Write Suspend-Program status 1 = Program suspended 0 = Program is not suspended 0 R 4 WPLD Write Protection Lock-Down status 1 = Write Protection Lock-Down enabled 0 = Write Protection Lock-Down disabled 0 R 5 SEC1 Security ID status 1 = Security ID space locked 0 = Security ID space not locked 01 R 6 RES Reserved for future use 0 R 7 BUSY Write operation status 1 = Internal Write operation is in progress 0 = No internal Write operation is in progress 0 R Bit Name Function 0 BUSY 1 1. The Security ID status will always be `1' at power-up after a successful execution of the Lockout Security ID instruction, otherwise default at power-up is `0'. 2014-2017 Microchip Technology Inc. DS20005262D-page 9 SST26VF016B 4.5.1 WRITE-ENABLE LATCH (WEL) The Write-Enable Latch (WEL) bit indicates the status of the internal memory's Write-Enable Latch. If the WEL bit is set to `1', the device is write enabled. If the bit is set to `0' (reset), the device is not write enabled and does not accept any memory Program or Erase, Protection Register Write, or Lock-Down commands. The Write-Enable Latch bit is automatically reset under the following conditions: * * * * * * * * * * * * * * Power-up Reset Write-Disable (WRDI) instruction Page-Program instruction completion Sector-Erase instruction completion Block-Erase instruction completion Chip-Erase instruction completion Write-Block-Protection register instruction Lock-Down Block-Protection register instruction Program Security ID instruction completion Lockout Security ID instruction completion Write-Suspend instruction SPI Quad Page program instruction completion Write Status Register 4.5.2 WRITE SUSPEND ERASE STATUS (WSE) The Write Suspend-Erase status (WSE) indicates when an Erase operation has been suspended. The WSE bit is `1' after the host issues a suspend command during an Erase operation. Once the suspended Erase resumes, the WSE bit is reset to `0'. TABLE 4-3: Bit 0 IOC 2 RES 3 BPNV 4 5 6 RES RES RES 7 WPEN WRITE SUSPEND PROGRAM STATUS (WSP) The Write Suspend-Program status (WSP) bit indicates when a Program operation has been suspended. The WSP is `1' after the host issues a suspend command during the Program operation. Once the suspended Program resumes, the WSP bit is reset to `0'. 4.5.4 WRITE PROTECTION LOCK-DOWN STATUS (WPLD) The Write Protection Lock-Down status (WPLD) bit indicates when the Block-Protection register is lockeddown to prevent changes to the protection settings. The WPLD is `1' after the host issues a Lock-Down Block-Protection command. After a power cycle, the WPLD bit is reset to `0'. 4.5.5 SECURITY ID STATUS (SEC) The Security ID Status (SEC) bit indicates when the Security ID space is locked to prevent a Write command. The SEC is `1' after the host issues a Lockout SID command. Once the host issues a Lockout SID command, the SEC bit can never be reset to `0.' 4.5.6 BUSY The Busy bit determines whether there is an internal Erase or Program operation in progress. If the BUSY bit is `1', the device is busy with an internal Erase or Program operation. If the bit is `0', no Erase or Program operation is in progress. 4.6 Configuration Register The Configuration register is a Read/Write register that stores a variety of configuration information. See Table 4-3 for the function of each bit in the register. CONFIGURATION REGISTER Name RES 1 4.5.3 Function Default at Power-up Reserved 0 I/O Configuration for SPI Mode 1 = WP# and HOLD# pins disabled 01 0 = WP# and HOLD# pins enabled Reserved 0 Block-Protection Volatility State 1 = No memory block has been permanently locked 1 0 = Any block has been permanently locked Reserved 0 Reserved 0 Reserved 0 Write-Protection Pin (WP#) Enable 1 = WP# enabled 02 0 = WP# disabled Read/Write (R/W) R R/W R R R R R R/W 1. Default at Power-up is `0' 2. Factory default setting. This is a non-volatile bit; default at power-up will be the setting prior to power-down. DS20005262D-page 10 2014-2017 Microchip Technology Inc. SST26VF016B 4.6.1 I/O CONFIGURATION (IOC) The I/O Configuration (IOC) bit re-configures the I/O pins. The IOC bit is set by writing a `1' to Bit 1 of the Configuration register. When IOC bit is `0' the WP# pin and HOLD# pin are enabled (SPI or Dual Configuration setup). When IOC bit is set to `1' the SIO2 pin and SIO3 pin are enabled (SPI Quad I/O Configuration setup). The IOC bit must be set to `1' before issuing the following SPI commands: SQOR (6BH), SQIOR (EBH), RBSPI (ECH), and SPI Quad page program (32H). Without setting the IOC bit to `1', those SPI commands are not valid. The I/O configuration bit does not apply when in SQI mode. The default at power-up is `0'. 4.6.2 BLOCK-PROTECTION VOLATILITY STATE (BPNV) The Block-Protection Volatility State bit indicates whether any block has been permanently locked with the non-Volatile Write-Lock Lock-Down register (nVWLDR). When no bits in the nVWLDR have been set, the BPNV is `1'; this is the default state from the factory. When one or more bits in the nVWLDR are set to `1', the BPNV bit will be `0' from that point forward, even after power-up. 4.6.3 WRITE-PROTECT ENABLE (WPEN) The Write-Protect Enable (WPEN) bit is a non-volatile bit that enables the WP# pin. The Write-Protect (WP#) pin and the Write-Protect Enable (WPEN) bit control the programmable hardware write-protect feature. Setting the WP# pin to low, and the WPEN bit to `1', enables Hardware write-protection. To disable Hardware write protection, set either the WP# pin to high or the WPEN bit to `0'. There is latency associated with writing to the WPEN bit. Poll the BUSY bit in the Status register, or wait TWPEN, for the completion of the internal, self-timed Write operation. When the chip is hardware write protected, only Write operations to Block-Protection and Configuration registers are disabled. See "Hardware Write Protection" on page 7 and Table 4-1 on page 7 for more information about the functionality of the WPEN bit. 2014-2017 Microchip Technology Inc. DS20005262D-page 11 SST26VF016B 5.0 INSTRUCTIONS Instructions are used to read, write (erase and program), and configure the SST26VF016B. The complete list of the instructions is provided in Table 5-1. TABLE 5-1: DEVICE OPERATION INSTRUCTIONS FOR SST26VF016B Mode Command Cycle1 SPI No Operation 00H RSTEN Reset Enable RST5 Reset Memory Instruction Description SQI Address Cycle(s)2, 3 Dummy Cycle(s)3 Data Cycle(s)3 X X 0 0 0 66H X X 0 0 0 99H X X 0 0 0 0 0 0 0 0 0 0 0 1 to X 0 1 1 to X 0 0 2 0 0 1 to 0 1 1 to 3 0 1 to Max4 Freq Configuration NOP EQIO Enable Quad I/O 38H X RSTQIO6 Reset Quad I/O FFH X RDSR Read Status Register 05H X WRSR Write Status Register 01H X RDCR Read Configuration Register 35H X Read Read Memory 03H HighSpeed Read Read Memory at Higher Speed 0BH SQOR7 SPI Quad Output Read SQIOR8 SPI Quad I/O Read SDOR SPI Dual Output Read SDIOR10 X X 104 MHz / 80 MHz Read X 3 3 1 to X 3 1 1 to 6BH X 3 1 1 to EBH X 3 3 1 to 3BH X 3 1 1 to SPI Dual I/O Read BBH X 3 1 1 to SB Set Burst Length C0H X X 0 0 1 RBSQI SQI Read Burst with Wrap 0CH X 3 3 n to RBSPI8 SPI Read Burst with Wrap ECH X 3 3 n to JEDEC-ID JEDEC-ID Read 9FH X Quad J-ID Quad I/O J-ID Read AFH SFDP Serial Flash Discoverable Parameters 5AH X 9 X 40 MHz 104 MHz / 80 MHz Identification X 0 0 3 to 0 1 3 to 3 1 1 to 104 MHz / 80 MHz Write WREN Write Enable 06H X X 0 0 0 WRDI Write Disable 04H X X 0 0 0 11 SE Erase 4 KBytes of Memory Array 20H X X 3 0 0 BE12 Erase 64, 32 or 8 KBytes of Memory Array D8H X X 3 0 0 CE Erase Full Array C7H X X 0 0 0 X PP Page Program 02H X SPI Quad PP7 SQI Quad Page Program 32H X DS20005262D-page 12 3 0 1 to 256 3 0 1 to 256 104 MHz / 80 MHz 2014-2017 Microchip Technology Inc. SST26VF016B TABLE 5-1: DEVICE OPERATION INSTRUCTIONS FOR SST26VF016B Mode Dummy Cycle(s)3 Data Cycle(s)3 Max4 Freq 104 MHz / 80 MHz SPI SQI Address Cycle(s)2, 3 WRSU Suspends Program/Erase B0H X X 0 0 0 WRRE Resumes Program/Erase 30H X X 0 0 0 RBPR Read Block-Protection Register 72H X 0 0 1 to6 X 0 1 1 to6 WBPR Write Block-Protection Register 42H X X 0 0 1 to 6 LBPR Lock Down Block-Protection Register 8DH X X 0 0 0 nVWLDR non-Volatile Write LockDown Register E8H X X 0 0 1 to 6 ULBPR Global Block Protection Unlock 98H X X 0 0 0 RSID Read Security ID 88H X 2 1 1 to 2048 X 2 3 1 to 2048 Instruction Description Command Cycle1 Protection PSID Program User Security ID area A5H X X 2 0 1 to 256 LSID Lockout Security ID Programming 85H X X 0 0 0 104 MHz / 80 MHz Power Saving DPD Deep Power-down Mode B9H X X 0 0 0 RDPD Release from Deep Powerdown and Read ID ABH X X 3 0 1 to 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 104 MHz / 80 MHz Command cycle is two clock periods in SQI mode and eight clock periods in SPI mode. Address bits above the most significant bit of each density can be VIL or VIH. Address, Dummy/Mode bits, and Data cycles are two clock periods in SQI and eight clock periods in SPI mode. The max frequency for all instructions is up to 104 MHz from 2.7-3.6V and up to 80 MHz from 2.3-3.6V unless otherwise noted. RST command only executed if RSTEN command is executed first. Any intervening command will disable Reset. Device accepts eight-clock command in SPI mode, or two-clock command in SQI mode. Data cycles are two clock periods. IOC bit must be set to `1' before issuing the command. Address, Dummy/Mode bits, and data cycles are two clock periods. IOC bit must be set to `1' before issuing the command. Data cycles are four clock periods. Address, Dummy/Mode bits, and Data cycles are four clock periods. Sector Addresses: Use AMS - A12, remaining address are don't care, but must be set to VIL or VIH. Blocks are 64 KByte, 32 KByte, or 8KByte, depending on location. Block Erase Address: AMS - A16 for 64 KByte; AMS - A15 for 32 KByte; AMS - A13 for 8 KByte. Remaining addresses are don't care, but must be set to VIL or VIH. 2014-2017 Microchip Technology Inc. DS20005262D-page 13 SST26VF016B 5.1 No Operation (NOP) The Reset operation requires the Reset-Enable command followed by the Reset command. Any command other than the Reset command after the Reset-Enable command will disable the Reset-Enable. The No Operation command only cancels a Reset Enable command. NOP has no impact on any other command. 5.2 Once the Reset-Enable and Reset commands are successfully executed, the device returns to normal operation Read mode and then does the following: resets the protocol to SPI mode, resets the burst length to 8 Bytes, clears all the bits, except for bit 4 (WPLD) and bit 5 (SEC), in the Status register to their default states, and clears bit 1 (IOC) in the configuration register to its default state. A device reset during an active Program or Erase operation aborts the operation, which can cause the data of the targeted address range to be corrupted or lost. Depending on the prior operation, the reset timing may vary. Recovery from a Write operation requires more latency time than recovery from other operations. See Table 8-2 on page 46 for Rest timing parameters. Reset-Enable (RSTEN) and Reset (RST) The Reset operation is used as a system (software) reset that puts the device in normal operating Ready mode. This operation consists of two commands: Reset-Enable (RSTEN) followed by Reset (RST). To reset SST26VF016B, the host drives CE# low, sends the Reset-Enable command (66H), and drives CE# high. Next, the host drives CE# low again, sends the Reset command (99H), and drives CE# high, see Figure 5-1. FIGURE 5-1: RESET SEQUENCE TCPH CE# MODE 3 MODE 3 MODE 3 CLK MODE 0 SIO(3:0) MODE 0 MODE 0 C1 C0 C3 C2 2005262 F05.0 Note: C[1:0] = 66H; C[3:2] = 99H 5.3 Read (40 MHz) will automatically increment until the highest memory address is reached. Once the highest memory address is reached, the address pointer will automatically return to the beginning (wrap-around) of the address space. The Read instruction, 03H, is supported in SPI bus protocol only with clock frequencies up to 40 MHz. This command is not supported in SQI bus protocol. The device outputs the data starting from the specified address location, then continuously streams the data output through all addresses until terminated by a lowto-high transition on CE#. The internal address pointer FIGURE 5-2: Initiate the Read instruction by executing an 8-bit command, 03H, followed by address bits A[23:0]. CE# must remain active low for the duration of the Read cycle. See Figure 5-2 for Read Sequence. READ SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47 48 55 56 63 64 70 MODE 0 03 SI MSB SO ADD. MSB HIGH IMPEDANCE ADD. ADD. N DOUT MSB DS20005262D-page 14 N+1 DOUT N+2 DOUT N+3 DOUT N+4 DOUT 20005262 F29.0 2014-2017 Microchip Technology Inc. SST26VF016B 5.4 Enable Quad I/O (EQIO) The Enable Quad I/O (EQIO) instruction, 38H, enables the flash device for SQI bus operation. Upon completion of the instruction, all instructions thereafter are FIGURE 5-3: expected to be 4-bit multiplexed input/output (SQI mode) until a power cycle or a "Reset Quad I/O instruction" is executed. See Figure 5-3. ENABLE QUAD I/O SEQUENCE CE# MODE 3 SCK 0 2 1 3 4 5 6 7 MODE 0 SIO0 38 SIO[3:1] 20005262 F43.0 Note: SIO[3:1] must be driven VIH 5.5 Reset Quad I/O (RSTQIO) where it can accept new command instruction. An additional RSTQIO is required to reset the device to SPI mode. The Reset Quad I/O instruction, FFH, resets the device to 1-bit SPI protocol operation or exits the Set Mode configuration during a read sequence. This command allows the flash device to return to the default I/O state (SPI) without a power cycle, and executes in either 1bit or 4-bit mode. If the device is in the Set Mode configuration, while in SQI High-Speed Read mode, the RSTQIO command will only return the device to a state FIGURE 5-4: To execute a Reset Quad I/O operation, the host drives CE# low, sends the Reset Quad I/O command cycle (FFH) then, drives CE# high. Execute the instruction in either SPI (8 clocks) or SQI (2 clocks) command cycles. For SPI, SIO[3:1] are don't care for this command, but should be driven to VIH or VIL. See Figures 5-4 and 5-5. RESET QUAD I/O SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 FF SIO0 SIO[3:1] 20005262 F73.0 Note: SIO[3:1] FIGURE 5-5: RESET QUAD I/O SEQUENCE (SQI) CE# MODE 3 SCK SIO(3:0) 0 1 F F MODE 0 20005262 F74.0 2014-2017 Microchip Technology Inc. DS20005262D-page 15 SST26VF016B 5.6 High-Speed Read Initiate High-Speed Read by executing an 8-bit command, 0BH, followed by address bits A[23-0] and a dummy byte. CE# must remain active low for the duration of the High-Speed Read cycle. See Figure 5-6 for the High-Speed Read sequence for SPI bus protocol. The High-Speed Read instruction, 0BH, is supported in both SPI bus protocol and SQI protocol. This instruction supports frequencies of up to 104 MHz from 2.73.6V and up to 80 MHz from 2.3-3.6V. On power-up, the device is set to use SPI. FIGURE 5-6: HIGH-SPEED READ SEQUENCE (SPI) (C[1:0] = 0BH) CE# MODE 3 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47 48 55 56 63 64 80 71 72 SCK MODE 0 0B SI/SIO0 ADD. ADD. ADD. X N DOUT MSB HIGH IMPEDANCE SO/SIO1 N+1 DOUT N+2 DOUT N+3 DOUT N+4 DOUT 20005262 F31.0 In SQI protocol, the host drives CE# low then sends one High-Speed Read command cycle, 0BH, followed by three address cycles, a Set Mode Configuration cycle, and two dummy cycles. Each cycle is two nibbles (clocks) long, most significant nibble first. mand, 0BH, and does not require the op-code to be entered again. The host may initiate the next Read cycle by driving CE# low, then sending the four-bits input for address A[23:0], followed by the Set Mode configuration bits M[7:0], and two dummy cycles. After the two dummy cycles, the device outputs the data starting from the specified address location. There are no restrictions on address location access. After the dummy cycles, the device outputs data on the falling edge of the SCK signal starting from the specified address location. The device continually streams data output through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically increments until the highest memory address is reached, at which point the address pointer returns to address location 000000H. During this operation, blocks that are Read-locked will output data 00H. When M[7:0] is any value other than AXH, the device expects the next instruction initiated to be a command instruction. To reset/exit the Set Mode configuration, execute the Reset Quad I/O command, FFH. While in the Set Mode configuration, the RSTQIO command will only return the device to a state where it can accept new command instruction. An additional RSTQIO is required to reset the device to SPI mode. See Figure 510 for the SPI Quad I/O Mode Read sequence when M[7:0] = AXH. The Set Mode Configuration bit M[7:0] indicates if the next instruction cycle is another SQI High-Speed Read command. When M[7:0] = AXH, the device expects the next continuous instruction to be another Read com- FIGURE 5-7: HIGH-SPEED READ SEQUENCE (SQI) CE# 0 1 MODE 0 MSN LSN C0 C1 MODE 3 2 3 A5 A4 4 5 6 7 8 9 A3 A2 A1 A0 M1 M0 10 11 12 13 14 15 20 21 SCK SIO(3:0) Command Address Mode Note: MSN= Most Significant Nibble, LSN = Least Significant Nibble Hx = High Data Nibble, Lx = Low Data Nibble C[1:0]=0BH DS20005262D-page 16 X X X Dummy X H0 L0 Data Byte 0 H8 L8 Data Byte 7 20005262 F47.0 2014-2017 Microchip Technology Inc. SST26VF016B 5.7 SPI Quad-Output Read The SPI Quad-Output Read instruction supports frequencies of up to 104 MHz from 2.7-3.6V and up to 80 MHz from 2.3-3.6V. SST26VF016B requires the IOC bit in the configuration register to be set to `1' prior to executing the command. Initiate SPI Quad-Output Read by executing an 8-bit command, 6BH, followed by address bits A[23-0] and a dummy byte. CE# must remain active low for the duration of the SPI Quad Mode Read. See Figure 5-8 for the SPI Quad Output Read sequence. FIGURE 5-8: Following the dummy byte, the device outputs data from SIO[3:0] starting from the specified address location. The device continually streams data output through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically increments until the highest memory address is reached, at which point the address pointer returns to the beginning of the address space. SPI QUAD OUTPUT READ CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 41 MODE 0 6BH OP Code A[23:16] A[15:8] Address A[7:0] X b4 b0 b4 b0 Dummy Data Byte 0 Data Byte N SIO1 b5 b1 b5 b1 SIO2 b6 b2 b6 b2 SIO3 b7 b3 b7 b3 Note: MSN= Most Significant Nibble, LSN = Least Significant Nibble 2014-2017 Microchip Technology Inc. 20005262 F48.3 DS20005262D-page 17 SST26VF016B 5.8 SPI Quad I/O Read The SPI Quad I/O Read (SQIOR) instruction supports frequencies of up to 104 MHz from 2.7-3.6V and up to 80 MHz from 2.3-3.6V. SST26VF016B requires the IOC bit in the configuration register to be set to `1' prior to executing the command. Initiate SQIOR by executing an 8-bit command, EBH. The device then switches to 4-bit I/O mode for address bits A[23-0], followed by the Set Mode configuration bits M[7:0], and two dummy bytes.CE# must remain active low for the duration of the SPI Quad I/O Read. See Figure 5-9 for the SPI Quad I/O Read sequence. The Set Mode Configuration bit M[7:0] indicates if the next instruction cycle is another SPI Quad I/O Read command. When M[7:0] = AXH, the device expects the next continuous instruction to be another Read command, EBH, and does not require the op-code to be entered again. The host may set the next SQIOR cycle by driving CE# low, then sending the four-bit wide input for address A[23:0], followed by the Set Mode configuration bits M[7:0], and two dummy cycles. After the two dummy cycles, the device outputs the data starting from the specified address location. There are no restrictions on address location access. Following the dummy bytes, the device outputs data from the specified address location. The device continually streams data output through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically increments until the highest memory address is reached, at which point the address pointer returns to the beginning of the address space. FIGURE 5-9: When M[7:0] is any value other than AXH, the device expects the next instruction initiated to be a command instruction. To reset/exit the Set Mode configuration, execute the Reset Quad I/O command, FFH. See Figure 5-10 for the SPI Quad I/O Mode Read sequence when M[7:0] = AXH. SPI QUAD I/O READ SEQUENCE CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 MODE 0 SIO0 EBH A20 A16 A12 A8 A4 A0 M4 M0 X X X X b4 b0 b4 b0 SIO1 A21 A17 A13 A9 A5 A1 M5 M1 X X X X b5 b1 b5 b1 SIO2 A22 A18 A14 A10 A6 A2 M6 M2 X X X X b6 b2 b6 b2 SIO3 A23 A19 A15 A11 A7 A3 M7 M3 X X X X b7 b3 b7 b3 MSN LSN Address Note: MSN= Most Significant Nibble, LSN = Least Significant Nibble DS20005262D-page 18 Set Mode Dummy Data Data Byte 0 Byte 1 20005262 F49.2 2014-2017 Microchip Technology Inc. SST26VF016B FIGURE 5-10: BACK-TO-BACK SPI QUAD I/O READ SEQUENCES WHEN M[7:0] = AXH CE# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 SCK SIO0 b4 b0 b4 b0 A20 A16 A12 A8 A4 A0 M4 M0 X X X X b4 b0 SIO1 b5 b1 b5 b1 A21 A17 A13 A9 A5 A1 M5 M1 X X X X b5 b1 SIO2 b6 b2 b6 b2 A22 A18 A14 A10 A6 A2 M6 M2 X X X X b6 b2 MSN LSN SIO3 b7 b3 b7 b3 A23 A19 A15 A11 A7 A3 M7 M3 X X X X b7 b3 Data Data Byte Byte N+1 N Set Mode Address Dummy Data Byte 0 20005262 F50.2 Note: MSN= 5.9 Set Burst sends the Set Burst command cycle (C0H) and one data cycle, then drives CE# high. After power-up or reset, the burst length is set to eight Bytes (00H). See Table 5-2 for burst length data and Figures 5-11 and 512 for the sequences. The Set Burst command specifies the number of bytes to be output during a Read Burst command before the device wraps around. It supports both SPI and SQI protocols. To set the burst length the host drives CE# low, TABLE 5-2: BURST LENGTH DATA Burst Length High Nibble (H0) Low Nibble (L0) 8 Bytes 0h 0h 16 Bytes 0h 1h 32 Bytes 0h 2h 64 Bytes 0h 3h FIGURE 5-11: SET BURST LENGTH SEQUENCE (SQI) CE# MODE 3 SCK SIO(3:0) 0 1 2 3 MODE 0 C1 C0 H0 L0 MSN LSN 20005262 F32.0 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0]=C0H 2014-2017 Microchip Technology Inc. DS20005262D-page 19 SST26VF016B FIGURE 5-12: SET BURST LENGTH SEQUENCE (SPI) CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 MODE 0 C0 DIN SIO[3:1] 20005262 F51.0 Note: SIO[3:1] must 5.10 SQI Read Burst with Wrap (RBSQI) SQI Read Burst with wrap is similar to High Speed Read in SQI mode, except data will output continuously within the burst length until a low-to-high transition on CE#. To execute a SQI Read Burst operation, drive CE# low then send the Read Burst command cycle (0CH), followed by three address cycles, and then three dummy cycles. Each cycle is two nibbles (clocks) long, most significant nibble first. After the dummy cycles, the device outputs data on the falling edge of the SCK signal starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low-tohigh transition on CE#. During RBSQI, the internal address pointer automatically increments until the last byte of the burst is reached, then it wraps around to the first byte of the burst. All bursts are aligned to addresses within the burst length, see Table 5-3. For example, if the burst length is eight Bytes, and the start address is 06h, the burst sequence would be: 06h, 07h, 00h, 01h, 02h, 03h, 04h, 05h, 06h, etc. The pattern repeats until the command is terminated by a low-to-high transition on CE#. During this operation, blocks that are Read-locked will output data 00H. TABLE 5-3: 5.11 SPI Read Burst with Wrap (RBSPI) SPI Read Burst with Wrap (RBSPI) is similar to SPI Quad I/O Read except the data will output continuously within the burst length until a low-to-high transition on CE#. To execute a SPI Read Burst with Wrap operation, drive CE# low, then send the Read Burst command cycle (ECH), followed by three address cycles, and then three dummy cycles. After the dummy cycle, the device outputs data on the falling edge of the SCK signal starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low-tohigh transition on CE#. During RBSPI, the internal address pointer automatically increments until the last byte of the burst is reached, then it wraps around to the first byte of the burst. All bursts are aligned to addresses within the burst length, see Table 5-3. For example, if the burst length is eight Bytes, and the start address is 06h, the burst sequence would be: 06h, 07h, 00h, 01h, 02h, 03h, 04h, 05h, 06h, etc. The pattern repeats until the command is terminated by a low-to-high transition on CE#. During this operation, blocks that are Read-locked will output data 00H. BURST ADDRESS RANGES Burst Length Burst Address Ranges 8 Bytes 00-07H, 08-0FH, 10-17H, 18-1FH... 16 Bytes 00-0FH, 10-1FH, 20-2FH, 30-3FH... 32 Bytes 00-1FH, 20-3FH, 40-5FH, 60-7FH... 64 Bytes 00-3FH, 40-7FH, 80-BFH, C0-FFH 0 DS20005262D-page 20 2014-2017 Microchip Technology Inc. SST26VF016B 5.12 SPI Dual-Output Read Following the dummy byte, SST26VF016B outputs data from SIO[1:0] starting from the specified address location. The device continually streams data output through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically increments until the highest memory address is reached, at which point the address pointer returns to the beginning of the address space. The SPI Dual-Output Read instruction supports frequencies of up to 104 MHz from 2.7-3.6V and up to 80 MHz from 2.3-3.6V. Initiate SPI Dual-Output Read by executing an 8-bit command, 3BH, followed by address bits A[23-0] and a dummy byte. CE# must remain active low for the duration of the SPI Dual-Output Read operation. See Figure 5-13 for the SPI Quad Output Read sequence. FIGURE 5-13: FAST READ, DUAL-OUTPUT SEQUENCE CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 8 15 16 23 24 3BH A[23:16] A[15:8] SIO1 OP Code Address Note: MSB = Most Significant Bit. 5.13 39 40 41 31 32 MODE 0 SPI Dual I/O Read The SPI Dual I/O Read (SDIOR) instruction supports up to 80 MHz frequency. Initiate SDIOR by executing an 8-bit command, BBH. The device then switches to 2-bit I/O mode for address bits A[23-0], followed by the Set Mode configuration bits M[7:0].CE# must remain active low for the duration of the SPI Dual I/O Read. See Figure 5-14 for the SPI Dual I/O Read sequence. A[7:0] b6 b5 b3 b1 b6 b5 b3 b1 MSB b7 b4 b2 b0 b7 b4 b2 b0 X Dummy Data Byte 0 Data Byte N 20005262 F52.3 execute the Reset Quad I/O command, FFH. See Figure 5-15 for the SPI Dual I/O Read sequence when M[7:0] = AXH. Following the Set Mode configuration bits, the SST26VF016B outputs data from the specified address location. The device continually streams data output through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically increments until the highest memory address is reached, at which point the address pointer returns to the beginning of the address space. The Set Mode Configuration bit M[7:0] indicates if the next instruction cycle is another SPI Dual I/O Read command. When M[7:0] = AXH, the device expects the next continuous instruction to be another SDIOR command, BBH, and does not require the op-code to be entered again. The host may set the next SDIOR cycle by driving CE# low, then sending the two-bit wide input for address A[23:0], followed by the Set Mode configuration bits M[7:0]. After the Set Mode Configuration bits, the device outputs the data starting from the specified address location. There are no restrictions on address location access. When M[7:0] is any value other than AXH, the device expects the next instruction initiated to be a command instruction. To reset/exit the Set Mode configuration, 2014-2017 Microchip Technology Inc. DS20005262D-page 21 SST26VF016B FIGURE 5-14: SPI DUAL I/O READ SEQUENCE CE# MODE 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 MODE 0 SCK SIO0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 BBH SIO1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 A[23:16] A[7:0] A[15:8] M[7:0] CE#(cont') 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 SCK(cont') I/O Switches from Input to Output SIO0(cont') 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 MSB SIO1(cont') MSB MSB MSB 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte 0 Byte 2 Byte 1 Byte 3 20005262 F53.1 Note: MSB= Most Significant Bit, LSB = Least Significant Bit FIGURE 5-15: BACK-TO-BACK SPI DUAL I/O READ SEQUENCES WHEN M[7:0] = AXH CE# MODE 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 MODE 0 SCK I/O Switch SIO0 6 4 MSB SIO1 7 5 6 4 2 0 6 4 2 0 6 4 2 0 6 4 6 4 2 0 MSB 7 5 3 1 7 5 3 1 7 5 3 1 7 5 7 5 3 1 A[23:16] A[15:8] A[7:0] M[7:0] CE#(cont') 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SCK(cont') I/O Switches from Input to Output SIO0(cont') 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 MSB SIO1(cont') Byte 0 Note: MSB= Most DS20005262D-page 22 MSB MSB MSB 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte 1 Byte 2 Byte 3 20005262 F54.1 2014-2017 Microchip Technology Inc. SST26VF016B 5.14 JEDEC-ID Read (SPI Protocol) Immediately following the command cycle, SST26VF016B output data on the falling edge of the SCK signal. The data output stream is continuous until terminated by a low-to-high transition on CE#. The device outputs three bytes of data: manufacturer, device type, and device ID, see Table 5-4. See Figure 5-16 for instruction sequence. Using traditional SPI protocol, the JEDEC-ID Read instruction identifies the device as SST26VF016B and the manufacturer as Microchip(R). To execute a JECECID operation the host drives CE# low then sends the JEDEC-ID command cycle (9FH). TABLE 5-4: DEVICE ID DATA OUTPUT Device ID Product Manufacturer ID (Byte 1) Device Type (Byte 2) Device ID (Byte 3) SST26VF016B BFH 26H 41H FIGURE 5-16: JEDEC-ID SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 MODE 0 SI SO 9F HIGH IMPEDANCE 26 BF MSB Device ID MSB 20005262 F38.0 5.15 Read Quad J-ID Read (SQI Protocol) Immediately following the command cycle and one dummy cycle, SST26VF016B outputs data on the falling edge of the SCK signal. The data output stream is continuous until terminated by a low-to-high transition of CE#. The device outputs three bytes of data: manufacturer, device type, and device ID, see Table 5-4. See Figure 5-17 for instruction sequence. The Read Quad J-ID Read instruction identifies the device as SST26VF016B and manufacturer as Microchip. To execute a Quad J-ID operation the host drives CE# low and then sends the Quad J-ID command cycle (AFH). Each cycle is two nibbles (clocks) long, most significant nibble first. FIGURE 5-17: QUAD J-ID READ SEQUENCE CE# MODE 3 0 1 2 C0 C1 X 3 4 5 MSN LSN H0 L0 7 6 8 9 H2 L2 10 11 12 13 N SCK MODE 0 SIO(3:0) X Dummy BFH H1 L1 26H Device ID H0 L0 H1 BFH L1 26H HN LN N 20005262 F55.0 Note: MSN = Most significant Nibble; LSN= Least Significant Nibble. C{1:0]=AFH 2014-2017 Microchip Technology Inc. DS20005262D-page 23 SST26VF016B 5.16 Serial Flash Discoverable Parameters (SFDP) ware support for all future Serial Flash device families. See Table 11-1 on page 61 for address and data values. The Serial Flash Discoverable Parameters (SFDP) contain information describing the characteristics of the device. This allows device-independent, JEDEC IDindependent, and forward/backward compatible soft- FIGURE 5-18: Initiate SFDP by executing an 8-bit command, 5AH, followed by address bits A[23-0] and a dummy byte. CE# must remain active low for the duration of the SFDP cycle. For the SFDP sequence, see Figure 5-18. SERIAL FLASH DISCOVERABLE PARAMETERS SEQUENCE CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47 48 55 56 63 64 71 72 80 MODE 0 5A SI ADD. ADD. ADD. X N DOUT MSB HIGH IMPEDANCE SO N+1 DOUT N+2 DOUT N+3 DOUT N+4 DOUT 20005262 F56.0 5.17 Sector-Erase To execute a Sector-Erase operation, the host drives CE# low, then sends the Sector Erase command cycle (20H) and three address cycles, and then drives CE# high. Address bits [AMS:A12] (AMS = Most Significant Address) determine the sector address (SAX); the remaining address bits can be VIL or VIH. To identify the completion of the internal, self-timed, Write operation, poll the BUSY bit in the Status register, or wait TSE. See Figures 5-19 and 5-20 for the Sector-Erase sequence. The Sector-Erase instruction clears all bits in the selected 4 KByte sector to `1,' but it does not change a protected memory area. Prior to any write operation, the Write-Enable (WREN) instruction must be executed. FIGURE 5-19: 4 KBYTE SECTOR-ERASE SEQUENCE- SQI MODE CE# MODE 3 SCK 0 1 2 4 6 MODE 0 SIO(3:0) C1 C0 A5 A4 A3 A2 A1 A0 MSN LSN 20005262 F07.0 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = 20H FIGURE 5-20: 4 KBYTE SECTOR-ERASE SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 20 SI MSB SO 15 16 23 24 31 MODE 0 ADD. ADD. ADD. MSB HIGH IMPEDANCE 20005262 F57.0 DS20005262D-page 24 2014-2017 Microchip Technology Inc. SST26VF016B 5.18 Block-Erase To execute a Block-Erase operation, the host drives CE# low then sends the Block-Erase command cycle (D8H), three address cycles, then drives CE# high. Address bits AMS-A13 determine the block address (BAX); the remaining address bits can be VIL or VIH. For 32 KByte blocks, A14:A13 can be VIL or VIH; for 64 KByte blocks, A15:A13 can be VIL or VIH. Poll the BUSY bit in the Status register, or wait TBE, for the completion of the internal, self-timed, Block-Erase operation. See Figures 5-21 and 5-22 for the Block-Erase sequence. The Block-Erase instruction clears all bits in the selected block to `1'. Block sizes can be 8 KByte, 32 KByte or 64 KByte depending on address, see Figure 3-1, Memory Map, for details. A Block-Erase instruction applied to a protected memory area will be ignored. Prior to any write operation, execute the WREN instruction. Keep CE# active low for the duration of any command sequence. FIGURE 5-21: BLOCK-ERASE SEQUENCE (SQI) CE# MODE 3 SCK 0 1 2 4 6 MODE 0 SIO(3:0) C1 C0 A5 A4 A3 A2 A1 A0 MSN LSN 20005262 F08.0 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble C[1:0] = D8H FIGURE 5-22: BLOCK-ERASE SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 MODE 0 D8 SI MSB SO ADDR ADDR ADDR MSB HIGH IMPEDANCE 20005262 F58.0 2014-2017 Microchip Technology Inc. DS20005262D-page 25 SST26VF016B 5.19 Chip-Erase To execute a Chip-Erase operation, the host drives CE# low, sends the Chip-Erase command cycle (C7H), then drives CE# high. Poll the BUSY bit in the Status register, or wait TSCE, for the completion of the internal, self-timed, Write operation. See Figures 5-23 and 5-24 for the Chip Erase sequence. The Chip-Erase instruction clears all bits in the device to `1.' The Chip-Erase instruction is ignored if any of the memory area is protected. Prior to any write operation, execute the WREN instruction. FIGURE 5-23: CHIP-ERASE SEQUENCE (SQI) CE# MODE 3 SCK 0 1 MODE 0 SIO(3:0) C1 C0 20005262 9.1 Note: C[1:0] = C7H FIGURE 5-24: CHIP-ERASE SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 C7 SI MSB SO HIGH IMPEDANCE 20005262 F59.0 DS20005262D-page 26 2014-2017 Microchip Technology Inc. SST26VF016B 5.20 Page-Program partial Byte to be ignored. Poll the BUSY bit in the Status register, or wait TPP, for the completion of the internal, self-timed, Write operation. See Figures 5-25 and 5-26 for the Page-Program sequence. The Page-Program instruction programs up to 256 Bytes of data in the memory, and supports both SPI and SQI protocols. The data for the selected page address must be in the erased state (FFH) before initiating the Page-Program operation. A Page-Program applied to a protected memory area will be ignored. Prior to the program operation, execute the WREN instruction. When executing Page-Program, the memory range for the SST26VF016B is divided into 256 Byte page boundaries. The device handles shifting of more than 256 Bytes of data by maintaining the last 256 Bytes of data as the correct data to be programmed. If the target address for the Page-Program instruction is not the beginning of the page boundary (A[7:0] are not all zero), and the number of bytes of data input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap around and will be programmed at the start of that target page. To execute a Page-Program operation, the host drives CE# low then sends the Page Program command cycle (02H), three address cycles followed by the data to be programmed, then drives CE# high. The programmed data must be between 1 to 256 Bytes and in whole Byte increments; sending less than a full Byte will cause the FIGURE 5-25: PAGE-PROGRAM SEQUENCE (SQI) CE# MODE 3 SCK 0 2 4 6 8 10 12 MODE 0 SIO(3:0) C1 C0 A5 A4 A3 A2 A1 A0 H0 L0 H1 L1 H2 L2 HN LN MSN LSN Data Byte 0 Data Byte 1 Data Byte 2 Data Byte 255 20005262 F10.1 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble FIGURE 5-26: PAGE-PROGRAM SEQUENCE (SPI) CE# MODE 3 SCK 23 24 15 16 0 1 2 3 4 5 6 7 8 31 32 39 MODE 0 SI ADD. 02 MSB SO ADD. ADD. Data Byte 0 LSB MSB LSB MSB LSB HIGH IMPEDANCE 2079 2078 2077 2076 2075 2074 2073 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2072 CE#(cont') SCK(cont') SI(cont') Data Byte 1 MSB SO(cont') Data Byte 255 Data Byte 2 LSB MSB LSB MSB LSB HIGH IMPEDANCE 20005262 F60.1 2014-2017 Microchip Technology Inc. DS20005262D-page 27 SST26VF016B 5.21 SPI Quad Page-Program The SPI Quad Page-Program instruction programs up to 256 Bytes of data in the memory. The data for the selected page address must be in the erased state (FFH) before initiating the SPI Quad Page-Program operation. A SPI Quad Page-Program applied to a protected memory area will be ignored. SST26VF016B requires the ICO bit in the configuration register to be set to `1' prior to executing the command. Prior to the program operation, execute the WREN instruction. To execute a SPI Quad Page-Program operation, the host drives CE# low then sends the SPI Quad PageProgram command cycle (32H), three address cycles followed by the data to be programmed, then drives CE# high. The programmed data must be between 1 to 256 Bytes and in whole Byte increments. The com- FIGURE 5-27: mand cycle is eight clocks long, the address and data cycles are each two clocks long, most significant bit first. Poll the BUSY bit in the Status register, or wait TPP, for the completion of the internal, self-timed, Write operation.See Figure 5-27. When executing SPI Quad Page-Program, the memory range for the SST26VF016B is divided into 256 Byte page boundaries. The device handles shifting of more than 256 Bytes of data by maintaining the last 256 Bytes of data as the correct data to be programmed. If the target address for the SPI Quad Page-Program instruction is not the beginning of the page boundary (A[7:0] are not all zero), and the of bytes of data input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap around and will be programmed at the start of that target page. SPI QUAD PAGE-PROGRAM SEQUENCE CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 MODE 0 32H A20A16A12 A8 A4 A0 b4 b0 b4 b0 b4 b0 SIO1 A21 A17A13 A9 A5 A1 b5 b1 b5 b1 b5 b1 SIO2 A22 A18A14A10 A6 A2 b6 b2 b6 b2 b6 b2 MSN LSN SIO3 A23 A19 A15 A11 A7 A3 b7 b3 b7 b3 b7 b3 Data Data Byte 0 Byte 1 Data Byte 255 Address 20005262 F61.1 5.22 Write-Suspend and Write-Resume Write-Suspend allows the interruption of Sector-Erase, Block-Erase, SPI Quad Page-Program, or Page-Program operations in order to erase, program, or read data in another portion of memory. The original operation can be continued with the Write-Resume command. This operation is supported in both SQI and SPI protocols. Only one write operation can be suspended at a time; if an operation is already suspended, the device will ignore the Write-Suspend command. Write-Suspend during Chip-Erase is ignored; Chip-Erase is not a valid command while a write is suspended. The WriteResume command is ignored until any write operation (Program or Erase) initiated during the Write-Suspend is complete. The device requires a minimum of 500 s between each Write-Suspend command. DS20005262D-page 28 5.23 Write-Suspend During SectorErase or Block-Erase Issuing a Write-Suspend instruction during SectorErase or Block-Erase allows the host to program or read any sector that was not being erased. The device will ignore any programming commands pointing to the suspended sector(s). Any attempt to read from the suspended sector(s) will output unknown data because the Sector- or Block-Erase will be incomplete. To execute a Write-Suspend operation, the host drives CE# low, sends the Write Suspend command cycle (B0H), then drives CE# high. The Status register indicates that the erase has been suspended by changing the WSE bit from `0' to `1,' but the device will not accept another command until it is ready. To determine when the device will accept a new command, poll the BUSY bit in the Status register or wait TWS. 2014-2017 Microchip Technology Inc. SST26VF016B 5.24 Write Suspend During Page Programming or SPI Quad Page Programming Issuing a Write-Suspend instruction during Page Programming allows the host to erase or read any sector that is not being programmed. Erase commands pointing to the suspended sector(s) will be ignored. Any attempt to read from the suspended page will output unknown data because the program will be incomplete. To execute a Write Suspend operation, the host drives CE# low, sends the Write Suspend command cycle (B0H), then drives CE# high. The Status register indicates that the programming has been suspended by changing the WSP bit from `0' to `1,' but the device will not accept another command until it is ready. To determine when the device will accept a new command, poll the BUSY bit in the Status register or wait TWS. 5.25 Write-Resume Write-Resume restarts a Write command that was suspended, and changes the suspend status bit in the Status register (WSE or WSP) back to `0'. To execute a Write-Resume operation, the host drives CE# low, sends the Write Resume command cycle (30H), then drives CE# high. To determine if the internal, self-timed Write operation completed, poll the BUSY bit in the Status register, or wait the specified time TSE, TBE or TPP for Sector-Erase, Block-Erase, or Page-Programming, respectively. The total write time before suspend and after resume will not exceed the uninterrupted write times TSE, TBE or TPP. 5.26 Read Security ID The Read Security ID operation is supported in both SPI and SQI modes. To execute a Read Security ID (SID) operation in SPI mode, the host drives CE# low, sends the Read Security ID command cycle (88H), two address cycles, and then one dummy cycle. To execute TABLE 5-5: a Read Security ID operation in SQI mode, the host drives CE# low and then sends the Read Security ID command, two address cycles, and three dummy cycles. After the dummy cycles, the device outputs data on the falling edge of the SCK signal, starting from the specified address location. The data output stream is continuous through all SID addresses until terminated by a low-to-high transition on CE#. See Table 5-5 for the Security ID address range. 5.27 Program Security ID The Program Security ID instruction programs one to 2040 Bytes of data in the user-programmable, Security ID space. This Security ID space is one-time programmable (OTP). The device ignores a Program Security ID instruction pointing to an invalid or protected address, see Table 5-5. Prior to the program operation, execute WREN. To execute a Program SID operation, the host drives CE# low, sends the Program Security ID command cycle (A5H), two address cycles, the data to be programmed, then drives CE# high. The programmed data must be between 1 to 256 Bytes and in whole Byte increments. The device handles shifting of more than 256 Bytes of data by maintaining the last 256 Bytes of data as the correct data to be programmed. If the target address for the Program Security ID instruction is not the beginning of the page boundary, and the number of data input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap around and will be programmed at the start of that target page. The Program Security ID operation is supported in both SPI and SQI mode. To determine the completion of the internal, self-timed Program SID operation, poll the BUSY bit in the software status register, or wait TPSID for the completion of the internal self-timed Program Security ID operation. PROGRAM SECURITY ID Program Security ID Address Range Unique ID Pre-Programmed at factory 0000 - 0007H User Programmable 0008H - 07FFH 2014-2017 Microchip Technology Inc. DS20005262D-page 29 SST26VF016B 5.28 Lockout Security ID mands function in both SPI and SQI modes. The Status register may be read at any time, even during a Write operation. When a Write is in progress, poll the BUSY bit before sending any new commands to assure that the new commands are properly received by the device. The Lockout Security ID instruction prevents any future changes to the Security ID, and is supported in both SPI and SQI modes. Prior to the operation, execute WREN. To execute a Lockout SID, the host drives CE# low, sends the Lockout Security ID command cycle (85H), then drives CE# high. Poll the BUSY bit in the software status register, or wait TPSID, for the completion of the Lockout Security ID operation. 5.29 To Read the Status or Configuration registers, the host drives CE# low, then sends the Read-Status-Register command cycle (05H) or the Read Configuration Register command (35H). A dummy cycle is required in SQI mode. Immediately after the command cycle, the device outputs data on the falling edge of the SCK signal. The data output stream continues until terminated by a low-to-high transition on CE#. See Figures 5-28 and 5-29 for the instruction sequence. Read-Status Register (RDSR) and Read-Configuration Register (RDCR) The Read-Status Register (RDSR) and Read-Configuration Register (RDCR) commands output the contents of the Status and Configuration registers. These com- FIGURE 5-28: READ-STATUS-REGISTER AND READ-CONFIGURATION REGISTER SEQUENCE (SQI) CE# MODE 3 0 2 4 6 8 SCK MODE 0 MSN LSN SIO(3:0) C1 C0 X X H0 L0 H0 L0 Dummy H0 L0 Status Byte Status Byte Status Byte 20005262 F11.0 Note: MSN = Most Significant Nibble; LSN = Least Significant Nibble, C[1:0]=05H or 35H FIGURE 5-29: READ-STATUS-REGISTER AND READ-CONFIGURATION REGISTER SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 MODE 0 05 or 35H SI MSB SO HIGH IMPEDANCE Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 MSB Status or Configuration Register Out 20005262 F62.1 DS20005262D-page 30 2014-2017 Microchip Technology Inc. SST26VF016B 5.30 Write-Status Register (WRSR) low, then sends the Write-Status Register command cycle (01H), two cycles of data, and then drives CE# high. Values in the second data cycle will be accepted by the device. See Figures 5-30 and 5-31. The Write-Status Register (WRSR) command writes new values to the Configuration register. To execute a Write-Status Register operation, the host drives CE# FIGURE 5-30: WRITE-STATUS-REGISTER SEQUENCE (SQI) CE# MODE 3 SCK 0 1 2 3 4 5 MODE 0 MSN LSN SIO[3:0] C1 C0 H0 L0 H0 L0 Command Status Byte Configuration Byte 20005262 F63.1 Note: MSN = Most Significant Nibble; S S FIGURE 5-31: WRITE-STATUS-REGISTER SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 MODE 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 MODE 0 01 06 SI MSB SO MSB STATUS CONFIGURATION REGISTER REGISTER 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 MSB MSB HIGH IMPEDANCE 20005262 F64.1 Note: XX = Don't Care 2014-2017 Microchip Technology Inc. DS20005262D-page 31 SST26VF016B 5.31 Write-Enable (WREN) Protection Register, Lock-Down Block-Protection Register, Non-Volatile Write-Lock Lock-Down Register, SPI Quad Page program, and Write-Status Register. To execute a Write Enable the host drives CE# low then sends the Write Enable command cycle (06H) then drives CE# high. See Figures 5-32 and 5-33 for the WREN instruction sequence. The Write Enable (WREN) instruction sets the WriteEnable-Latch bit in the Status register to `1,' allowing Write operations to occur. The WREN instruction must be executed prior to any of the following operations: Sector Erase, Block Erase, Chip Erase, Page Program, Program Security ID, Lockout Security ID, Write Block- FIGURE 5-32: WRITE-ENABLE SEQUENCE (SQI) CE# MODE 3 SCK 0 1 0 6 MODE 0 SIO[3:0] 20005262 F12.1 FIGURE 5-33: WRITE-ENABLE SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 06 SI MSB SO HIGH IMPEDANCE 20005262 F18.0 DS20005262D-page 32 2014-2017 Microchip Technology Inc. SST26VF016B 5.32 Write-Disable (WRDI) during any internal write operations. Any Write operation started before executing WRDI will complete. Drive CE# high before executing WRDI. The Write-Disable (WRDI) instruction sets the WriteEnable-Latch bit in the Status register to `0,' preventing Write operations. The WRDI instruction is ignored FIGURE 5-34: To execute a Write-Disable, the host drives CE# low, sends the Write Disable command cycle (04H), then drives CE# high. See Figures 5-34 and 5-35. WRITE-DISABLE (WRDI) SEQUENCE (SQI) CE# MODE 3 SCK 0 1 0 4 MODE 0 SIO(3:0) 20005262 F33.1 FIGURE 5-35: WRITE-DISABLE (WRDI) SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 04 SI MSB SO HIGH IMPEDANCE 20005262 F19.0 2014-2017 Microchip Technology Inc. DS20005262D-page 33 SST26VF016B 5.33 Read Block-Protection Register (RBPR) After the command cycle, the device outputs data on the falling edge of the SCK signal starting with the most significant bit(s), see Table 5-6 for definitions of each bit in the Block-Protection register. The RBPR command does not wrap around. After all data has been output, the device will output 0H until terminated by a low-tohigh transition on CE#. Figures 5-36 and 5-37. The Read Block-Protection Register instruction outputs the Block-Protection register data which determines the protection status. To execute a Read Block-Protection Register operation, the host drives CE# low, and then sends the Read Block-Protection Register command cycle (72H). A dummy cycle is required in SQI mode. FIGURE 5-36: READ BLOCK-PROTECTION REGISTER SEQUENCE (SQI) CE# MODE 3 0 2 4 6 8 10 12 SCK SIO[3:0] C1 C0 X X H0 L0 H1 L1 H2 L2 H3 L3 H4 L4 MSN LSN BPR [m:m-7] HN LN BPR [7:0] 20005262 F34.2 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble Block-Protection Register (BPR), m = 47 for SST26VF016B, C[1:0]=72H FIGURE 5-37: READ BLOCK-PROTECTION REGISTER SEQUENCE (SPI) CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 8 15 16 23 24 32 33 MODE 0 72H OP Code SIO Data Byte 0 Data Byte 1 Data Byte 2 Data Byte N 20005262 F65.1 DS20005262D-page 34 2014-2017 Microchip Technology Inc. SST26VF016B 5.34 Write Block-Protection Register (WBPR) To execute a Write Block-Protection Register operation the host drives CE# low, sends the Write Block-Protection Register command cycle (42H), sends 18 cycles of data, and finally drives CE# high. Data input must be most significant bit(s) first. See Table 5-6 for definitions of each bit in the Block-Protection register. See Figures 5-38 and 5-39. The Write Block-Protection Register (WBPR) command changes the Block-Protection register data to indicate the protection status. Execute WREN before executing WBPR. FIGURE 5-38: WRITE BLOCK-PROTECTION REGISTER SEQUENCE (SQI) CE# MODE 3 SCK 0 2 4 6 8 10 12 MODE 0 SIO(3:0) C1 C0 H0 L0 H1 L1 H2 L2 H3 L3 H4 L4 H5 L5 HN LN MSN LSN BPR [m:m-7] BPR [7:0] Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble Block-Protection Register (BPR) m = 47, C[1:0]=42H. FIGURE 5-39: WRITE BLOCK-PROTECTION REGISTER SEQUENCE (SPI). CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 MODE 0 OP Code SI 42H Data Byte0 Data Byte1 Data Byte2 Data ByteN SO 20005262 F66.1 Note: C[1:0]=42H 2014-2017 Microchip Technology Inc. DS20005262D-page 35 SST26VF016B 5.35 Lock-Down Block-Protection Register (LBPR) cycling; this allows the Block-Protection register to be changed. Execute WREN before initiating the LockDown Block-Protection Register instruction. The Lock-Down Block-Protection Register instruction prevents changes to the Block-Protection register during device operation. Lock-Down resets after power FIGURE 5-40: To execute a Lock-Down Block-Protection Register, the host drives CE# low, then sends the Lock-Down BlockProtection Register command cycle (8DH), then drives CE# high. LOCK-DOWN BLOCK-PROTECTION REGISTER (SQI) CE# MODE 3 SCK 0 1 MODE 0 SIO(3:0) C1 C0 20005262 F30.1 Note: C[1:0]=8DH FIGURE 5-41: LOCK-DOWN BLOCK-PROTECTION REGISTER (SPI) CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 MODE 0 8D SIO[3:1] 20005262 F67.0 DS20005262D-page 36 2014-2017 Microchip Technology Inc. SST26VF016B 5.36 Non-Volatile Write-Lock LockDown Register (nVWLDR) After CE# goes high, the non-volatile bits are programmed and the programming time-out must complete before any additional commands, other than Read Status Register, can be entered. Poll the BUSY bit in the Status register, or wait TPP, for the completion of the internal, self-timed, Write operation. Data inputs must be most significant bit(s) first. The Non-Volatile Write-Lock Lock-Down Register (nVWLDR) instruction controls the ability to change the Write-Lock bits in the Block-Protection register. Execute WREN before initiating the nVWLDR instruction. To execute nVWLDR, the host drives CE# low, then sends the nVWLDR command cycle (E8H), followed by 18 cycles of data, and then drives CE# high. FIGURE 5-42: WRITE-LOCK LOCK-DOWN REGISTER SEQUENCE (SQI) CE# MODE 3 SCK 0 2 4 6 8 10 12 MODE 0 SIO(3:0) E 8 H0 L0 H1 L1 H2 L2 H3 L3 H4 L4 H5 L5 HN LN MSN LSN nVWLDR[m:m-7] BPR [7:0] 20005262 F36.0 Note: MSN= Most Significant Nibble; LSN = Least Significant Nibble Write-Lock Lock-Down Register (nVWLDR) m = 47 FIGURE 5-43: WRITE-LOCK LOCK-DOWN REGISTER SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 MODE 0 OP Code SI E8H Data Byte0 Data Byte1 Data Byte2 Data ByteN SO 20005262 F69.1 2014-2017 Microchip Technology Inc. DS20005262D-page 37 SST26VF016B 5.37 Global Block-Protection Unlock (ULBPR) To execute a ULBPR instruction, the host drives CE# low, then sends the ULBPR command cycle (98H), and then drives CE# high. The Global Block-Protection Unlock (ULBPR) instruction clears all write-protection bits in the Block-Protection register, except for those bits that have been locked down with the nVWLDR command. Execute WREN before initiating the ULBPR instruction. FIGURE 5-44: GLOBAL BLOCK-PROTECTION UNLOCK (SQI) CE# MODE 3 SCK 0 1 MODE 0 SIO(3:0) C1 C0 20005262 F20.1 Note: C[1:0]=98H FIGURE 5-45: GLOBAL BLOCK-PROTECTION UNLOCK (SPI) CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 MODE 0 98 SIO[3:1] 20005262 F68.0 DS20005262D-page 38 2014-2017 Microchip Technology Inc. SST26VF016B BLOCK-PROTECTION REGISTER FOR SST26VF016B 1 TABLE 5-6: BPR Bits Read Lock Write Lock/nVWLDR2 Address Range Protected Block Size 47 46 1FE000H - 1FFFFFH 8 KByte 45 44 1FC000H - 1FDFFFH 8 KByte 43 42 1FA000H - 1FBFFFH 8 KByte 41 40 1F8000H - 1F9FFFH 8 KByte 39 38 006000H - 007FFFH 8 KByte 37 36 004000H - 005FFFH 8 KByte 35 34 002000H - 003FFFH 8 KByte 33 32 000000H - 001FFFH 8 KByte 31 1F0000H - 1F7FFFH 32 KByte 30 008000H - 00FFFFH 32 KByte 29 1E0000H - 1EFFFFH 64 KByte 28 1D0000H -1DFFFFH 64 KByte 27 1C0000H -1CFFFFH 64 KByte 26 1B0000H - 1BFFFFH 64 KByte 25 1A0000H - 1AFFFFH 64 KByte 24 190000H - 19FFFFH 64 KByte 23 180000H - 18FFFFH 64 KByte 22 170000H - 17FFFFH 64 KByte 21 160000H - 16FFFFH 64 KByte 20 150000H - 15FFFFH 64 KByte 19 140000H - 14FFFFH 64 KByte 18 130000H - 13FFFFH 64 KByte 17 120000H - 12FFFFH 64 KByte 16 110000H - 11FFFFH 64 KByte 15 100000H - 10FFFFH 64 KByte 14 0F0000H - 0FFFFFH 64 KByte 13 0E0000H - 0EFFFFH 64 KByte 12 0D0000H - 0DFFFFH 64 KByte 11 0C0000H - 0CFFFFH 64 KByte 10 0B0000H - 0BFFFFH 64 KByte 9 0A0000H - 0AFFFFH 64 KByte 8 090000H - 09FFFFH 64 KByte 7 080000H - 08FFFFH 64 KByte 6 070000H - 07FFFFH 64 KByte 5 060000H - 06FFFFH 64 KByte 4 050000H - 05FFFFH 64 KByte 3 040000H - 04FFFFH 64 KByte 2 030000H - 03FFFFH 64 KByte 1 020000H - 02FFFFH 64 KByte 0 010000H - 01FFFFH 64 KByte 1. The default state after a power-on reset is write-protected BPR[47:0] = 5555 FFFF FFFF 2. nVWLDR bits are one-time-programmable. Once a WLLDR bit is set, the protection state of that particular block is permanently write-locked. 2014-2017 Microchip Technology Inc. DS20005262D-page 39 SST26VF016B 5.38 Deep Power-Down Enter Deep Power-down mode by initiating the Deep Power-down (DPD) instruction (B9H) while driving CE# low. CE# must be driven high before executing the DPD instruction. After CE# is driven high, it requires a delay of TDPD before the standby current ISB is reduced to deep power-down current IDPD. See Table 5-7 for Deep Power-down timing. If the device is busy performing an internal erase or program operation, initiating a Deep Power-down instruction will not placed the device in Deep Power-down mode. See Figures 5-46 and 5-47 for the DPD instruction sequence. The Deep Power-down (DPD) instruction puts the device in the lowest power consumption mode-the Deep Power-down mode. The Deep Power-down instruction is ignored during an internal write operation. While the device is in Deep Power-down mode, all instructions will be ignored except for the Release Deep Power-down instruction. TABLE 5-7: Symbol TDPD TSBR DEEP POWER-DOWN Parameter CE# High to Deep Power-down CE# High to Standby Mode Min CE# Units s s TDPD MODE 3 SCK Max 3 10 1 0 MODE 0 B 9 MSN LSN SIO(3:0) Standby Mode Deep Power-Down Mode 20005262 F100.0 Note: MSN= Most Significant Nibble; LSN = Least Significant Nibble FIGURE 5-46: DEEP POWER-DOWN (DPD) SEQUENCE-SQI MODE CE# TDPD MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 B9 SI MSB SO HIGH IMPEDANCE Standby Mode Deep Power-Down Mode 20005262 F101.0 FIGURE 5-47: DS20005262D-page 40 DEEP POWER-DOWN (DPD)-SPI MODE 2014-2017 Microchip Technology Inc. SST26VF016B 5.39 Release from Deep Power-Down and Read ID To execute RDPD and read the Device ID, the host drives CE# low then sends the Deep Power-Down command cycle (ABH), three dummy clock cycles, and then drives CE# high. The device outputs the Device ID on the falling edge of the SCK signal following the dummy cycles. The data output stream is continuous until terminated by a low-to-high transition on CE, and will return to Standby mode and be ready for the next instruction after TSBR. See Figures 5-48 and 5-49 for the command sequence. Release from Deep Power-Down (RDPD) and Read ID instruction exits Deep Power-down mode. To exit Deep Power down mode, execute the RDPD. During this command, the host drives CE# low, then sends the Deep Power-Down command cycle (ABH), and then drives CE# high. The device will return to Standby mode and be ready for the next instruction after TSBR. TSBR CE# MODE 3 0 1 SCK MODE 0 Op Code SIO[3:0] C1 C0 MSN LSN X X X X X X D1 D0 Device ID Deep Power-Down Mode Standby Mode 20005262 F102.0 Note: C[1:0]=ABH FIGURE 5-48: RELEASE FROM DEEP POWER-DOWN (RDPD) AND READ ID SEQUENCE-SQI MODE TSBR CE# MODE 3 0 1 2 3 4 5 6 7 8 15 16 23 24 32 33 40 SCK MODE 0 Op Code SIO[3:0] AB XX XX XX Device ID Deep Power-Down Mode Standby Mode 20005262 F103.0 FIGURE 5-49: RELEASE FROM DEEP POWER-DOWN (RDPD) AND READ ID SEQUENCE-SPI MODE 2014-2017 Microchip Technology Inc. DS20005262D-page 41 SST26VF016B 6.0 ELECTRICAL SPECIFICATIONS Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Package Power Dissipation Capability (TA = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA 1. Output shorted for no more than one second. No more than one output shorted at a time. TABLE 6-1: OPERATING RANGE Range Ambient Temp Industrial -40C to +85C Industrial Plus -40C to +105C 6.1 VDD Input Rise/Fall Time Output Load 3ns CL = 30 pF 2.3V-3.6V 1. See Figure 8-5 Power-Up Specifications All functionalities and DC specifications are specified for a VDD ramp rate of greater than 1V per 100 ms (0V to 3.0V in less than 300 ms). See Table 6-3 and Figure 6-1 for more information. TABLE 6-3: AC CONDITIONS OF TEST1 TABLE 6-2: When VDD drops from the operating voltage to below the minimum VDD threshold at power-down, all operations are disabled and the device does not respond to commands. Data corruption may result if a power-down occurs while a Write-Registers, program, or erase operation is in progress. See Figure 6-2. RECOMMENDED SYSTEM POWER-UP/DOWN TIMINGS Symbol Parameter TPU-READ1 VDD Min to Read Operation Minimum 100 Max Units TPU-WRITE1 VDD Min to Write Operation 100 s TPD1 Power-down Duration 100 ms VOFF VDD off time Condition s 0.3 V 0V recommended 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. DS20005262D-page 42 2014-2017 Microchip Technology Inc. SST26VF016B FIGURE 6-1: POWER-UP TIMING DIAGRAM VDD VDD Max Chip selection is not allowed. Commands may not be accepted or properly interpreted by the device. VDD Min TPU-READ TPU-WRITE Device fully accessible Time 20005262 F27.0 FIGURE 6-2: POWER-DOWN AND VOLTAGE DROP DIAGRAM VDD VDD Max No Device Access Allowed VDD Min TPU Device Access Allowed VOFF TPD Time 20005262 F72.0 2014-2017 Microchip Technology Inc. DS20005262D-page 43 SST26VF016B 7.0 DC CHARACTERISTICS TABLE 7-1: DC OPERATING CHARACTERISTICS (VDD = 2.3-3.6V) Limits Symbol IDDR1 Parameter Read Current IDDR2 IDDW ISB IDPD ILI ILO VIL VIH VOL VOH Max 15 Units mA Read Current 20 mA Program and Erase Current Standby Current Deep Power-down Current Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage 25 mA Test Conditions VDD=VDD Max, CE#=0.1 VDD/0.9 VDD@40 MHz, SO=open VDD = VDD Max, CE#=0.1 VDD/0.9 VDD@104 MHz, SO=open VDD Max 45 25 A A CE#=VDD, VIN=VDD or VSS CE#=VDD, VIN=VDD or VSS 2 2 0.8 A A V V V V VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Min VDD=VDD Max IOL=100 A, VDD=VDD Min IOH=-100 A, VDD=VDD Min TABLE 7-2: Min Typ 8 15 8 0.7 VDD 0.2 VDD-0.2 CAPACITANCE (TA = 25C, F=1 MHZ, OTHER PINS OPEN) Parameter COUT1 CIN1 Description Output Pin Capacitance Input Capacitance Test Condition VOUT = 0V VIN = 0V Maximum 8 pF 6 pF 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 7-3: Symbol NEND1 TDR1 ILTH1 RELIABILITY CHARACTERISTICS Parameter Endurance Data Retention Latch Up Minimum Specification 100,000 100 100 + IDD Units Cycles Years mA Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard 78 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 7-4: Symbol TSE TBE TSCE TPP1 TPSID TWS TWpen WRITE TIMING PARAMETERS (VDD = 2.3-3.6V) Parameter Sector-Erase Block-Erase Chip-Erase Page-Program Program Security-ID Write-Suspend Latency Write-Protection Enable Bit Latency Minimum Maximum 25 25 50 1.5 1.5 25 25 Units ms ms ms ms ms s ms 1. Estimate for typical conditions less than 256 bytes: Programming Time (s) = 55 + (3.75 x # of bytes) DS20005262D-page 44 2014-2017 Microchip Technology Inc. SST26VF016B 8.0 AC CHARACTERISTICS TABLE 8-1: AC OPERATING CHARACTERISTICS (VDD1 = 2.3-3.6V) Limits - 40 MHz Symbol FCLK TCLK TSCKH TSCKL TSCKR2 TSCKF2 TCES3 TCEH3 TCHS3 TCHH3 TCPH TCHZ TCLZ THLS THHS THLH THHH THZ TLZ TDS TDH TOH TV 1. 2. 3. 4. Parameter Serial Clock Frequency Serial Clock Period Serial Clock High Time Serial Clock Low Time Serial Clock Rise Time (slew rate) Serial Clock Fall Time (slew rate) CE# Active Setup Time CE# Active Hold Time CE# Not Active Setup Time CE# Not Active Hold Time CE# High Time CE# High to High-Z Output SCK Low to Low-Z Output HOLD# Low Setup Time HOLD# High Setup Time HOLD# Low Hold Time HOLD# High Hold Time HOLD# Low-to-High-Z Output HOLD# High-to-Low-Z Output Data In Setup Time Data In Hold Time Output Hold from SCK Change Output Valid from SCK Min Max 40 25 11 11 0.1 0.1 8 8 8 8 25 Limits - 80 MHz Min Max 80 12.5 5.5 5.5 0.1 0.1 5 5 5 5 12.5 12.5 0 5 5 5 5 Max 104 9.6 12 0 5 5 5 5 8 8 3 4 0 Min 4.5 4.5 0.1 0.1 5 5 5 5 12 19 0 8 8 8 8 Limits - 104 MHz 8 8 3 4 0 8 8 3 4 0 8/5 4 8/5 4 8/5 4 Units MHz ns ns ns V/ns V/ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Maximum operating frequency for 2.7-3.6V is 104 MHz and for 2.3-3.6V is 80 MHz. Maximum Rise and Fall time may be limited by TSCKH and TSCKL requirements Relative to SCK. 30 pF/10 pF FIGURE 8-1: HOLD TIMING DIAGRAM CE# THHH THHS THLS SCK THZ THLH TLZ SO SI HOLD# 20005262 F104.0 2014-2017 Microchip Technology Inc. DS20005262D-page 45 SST26VF016B FIGURE 8-2: SERIAL INPUT TIMING DIAGRAM TCPH CE# TCHH TCES TCEH TSCKF TCHS SCK TDS SIO[3:0] TDH TSCKR LSB MSB 20005262 F105.0 FIGURE 8-3: SERIAL OUTPUT TIMING DIAGRAM CE# TSCKH TSCKL SCK TCLZ SIO[3:0] TOH TCHZ LSB MSB TV TABLE 8-2: 20005262 F106.0 RESET TIMING PARAMETERS TR(i) Parameter TR(o) Reset to Read (non-data operation) 20 ns TR(p) Reset Recovery from Program or Suspend 100 s TR(e) Reset Recovery from Erase 1 ms FIGURE 8-4: Minimum Maximum Units RESET TIMING DIAGRAM TCPH CE# MODE 3 MODE 3 MODE 3 CLK MODE 0 SIO(3:0) MODE 0 C1 C0 MODE 0 C3 C2 20005262 F14.0 Note: C[1:0] = 66H; C[3:2] = 99H DS20005262D-page 46 2014-2017 Microchip Technology Inc. SST26VF016B FIGURE 8-5: AC INPUT/OUTPUT REFERENCE WAVEFORMS VIHT VHT INPUT VHT REFERENCE POINTS VLT OUTPUT VLT VILT 20005262 F28.0 AC test inputs are driven at VIHT (0.9VDD) for a logic `1' and VILT (0.1VDD) for a logic `0'. Measurement reference points for inputs and outputs are VHT (0.6VDD) and VLT (0.4VDD). Input rise and Note: VHT - VHIGH Test VLT - VLOW Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test 2014-2017 Microchip Technology Inc. DS20005262D-page 47 SST26VF016B 9.0 PACKAGING INFORMATION 9.1 Package Marking 8-Lead SOIJ (5.28 mm) Example 26F016B SM e3 1503343 8-Lead SOIC (3.90 mm) Example 26F016B SN1503 343 NNN 8-Lead WDFN (5x6 mm) Example 26F016B MF 1503343 XXXXXXXX XXXXXXXX YYWWNNN Part Number SST26VF016B Legend: XX...X Y YY WW NNN e3 1st Line Marking Codes SOIJ SOIC WDFN 26F016B 26F016B 26F016B Part number or part number code Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code (2 characters for small packages) Pb-free JEDEC(R) designator for Matte Tin (Sn) Note: For very small packages with no room for the Pb-free JEDEC(R) designator e3 , the marking will only appear on the outer carton or reel label. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. DS20005262D-page 48 2014-2017 Microchip Technology Inc. SST26VF016B 9.2 Packaging Diagrams 8-Lead Plastic Very, Very Thin Small Outline No-Lead (MF) - 5x6 mm Body [WDFN] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging D A B N (DATUM A) (DATUM B) E NOTE 1 2X 0.15 C 1 2 2X 0.15 C TOP VIEW A1 0.10 C C A SEATING PLANE A3 SIDE VIEW 0.08 C 0.10 C A B D2 e 1 2 0.10 C A B NOTE 1 E2 K N 8Xb 0.10 0.05 SEE DETAIL A C A B C BOTTOM VIEW Microchip Technology Drawing C04-210B Sheet 1 of 2 2014-2017 Microchip Technology Inc. DS20005262D-page 49 SST26VF016B 8-Lead Plastic Very, Very Thin Small Outline No-Lead (MF) - 5x6 mm Body [WDFN] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging (DATUM A) L e/2 e DETAIL A Units Dimension Limits N Number of Terminals e Pitch A Overall Height Standoff A1 A3 Terminal Thickness D Overall Width D2 Exposed Pad Width E Overall Length E2 Exposed Pad Length b Terminal Width L Terminal Length K Terminal-to-Exposed-Pad MIN 0.70 0.00 0.35 0.50 0.20 MILLIMETERS NOM 8 1.27 BSC 0.75 0.02 0.20 REF 5.00 BSC 4.00 BSC 6.00 BSC 3.40 BSC 0.42 0.60 - MAX 0.80 0.05 0.48 0.70 - Notes: 1. Pin 1 visual index feature may vary, but must be located within the hatched area. 2. Package is saw singulated 3. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only. Microchip Technology Drawing C04-210B Sheet 2 of 2 DS20005262D-page 50 2014-2017 Microchip Technology Inc. SST26VF016B 8-Lead Plastic Very, Very Thin Small Outline No-Lead (MF) - 5x6 mm Body [WDFN] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging C X2 E X1 Y2 Y1 SILK SCREEN RECOMMENDED LAND PATTERN Units Dimension Limits E Contact Pitch X2 Optional Center Pad Width Optional Center Pad Length Y2 Contact Pad Spacing C Contact Pad Width (X8) X1 Contact Pad Length (X8) Y1 MIN MILLIMETERS NOM 1.27 BSC MAX 3.50 4.10 5.70 0.45 1.10 Notes: 1. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-2210A 2014-2017 Microchip Technology Inc. DS20005262D-page 51 SST26VF016B Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20005262D-page 52 2014-2017 Microchip Technology Inc. SST26VF016B Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2014-2017 Microchip Technology Inc. DS20005262D-page 53 SST26VF016B Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20005262D-page 54 2014-2017 Microchip Technology Inc. SST26VF016B 8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2X 0.10 C A-B D A D NOTE 5 N E 2 E1 2 E1 E NOTE 1 2 1 e B NX b 0.25 C A-B D NOTE 5 TOP VIEW 0.10 C C A A2 SEATING PLANE 8X A1 SIDE VIEW 0.10 C h R0.13 h R0.13 H SEE VIEW C VIEW A-A 0.23 L (L1) VIEW C Microchip Technology Drawing No. C04-057-SN Rev D Sheet 1 of 2 2014-2017 Microchip Technology Inc. DS20005262D-page 55 SST26VF016B 8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging Units Dimension Limits Number of Pins N e Pitch Overall Height A Molded Package Thickness A2 Standoff A1 Overall Width E Molded Package Width E1 Overall Length D Chamfer (Optional) h Foot Length L Footprint L1 Foot Angle c Lead Thickness b Lead Width Mold Draft Angle Top Mold Draft Angle Bottom MIN 1.25 0.10 0.25 0.40 0 0.17 0.31 5 5 MILLIMETERS NOM 8 1.27 BSC 6.00 BSC 3.90 BSC 4.90 BSC 1.04 REF - MAX 1.75 0.25 0.50 1.27 8 0.25 0.51 15 15 Notes: 1. Pin 1 visual index feature may vary, but must be located within the hatched area. 2. Significant Characteristic 3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15mm per side. 4. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only. 5. Datums A & B to be determined at Datum H. Microchip Technology Drawing No. C04-057-SN Rev D Sheet 2 of 2 DS20005262D-page 56 2014-2017 Microchip Technology Inc. SST26VF016B 8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm Body [SOIC] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging SILK SCREEN C Y1 X1 E RECOMMENDED LAND PATTERN Units Dimension Limits E Contact Pitch Contact Pad Spacing C Contact Pad Width (X8) X1 Contact Pad Length (X8) Y1 MIN MILLIMETERS NOM 1.27 BSC 5.40 MAX 0.60 1.55 Notes: 1. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-2057-SN Rev B 2014-2017 Microchip Technology Inc. DS20005262D-page 57 SST26VF016B TABLE 9-1: REVISION HISTORY Revision Description Date A * Initial release of data sheet May 2014 B * * Removed the SST26VF016BA device from the data sheet Added Part Markings Feb 2015 C * * Extended the voltage range Added Extended temperature range Aug 2015 D * * * Correction to High Speed Clock Frequency range Correction to Table 6-1: Operating Range Added Automotive AECQ-100 information Dec 2017 DS20005262D-page 58 2014-2017 Microchip Technology Inc. SST26VF016B THE MICROCHIP WEB SITE CUSTOMER SUPPORT Microchip provides online support via our WWW site at www.microchip.com. This web site is used as a means to make files and information easily available to customers. Accessible by using your favorite Internet browser, the web site contains the following information: * Product Support - Data sheets and errata, application notes and sample programs, design resources, user's guides and hardware support documents, latest software releases and archived software * General Technical Support - Frequently Asked Questions (FAQ), technical support requests, online discussion groups, Microchip consultant program member listing * Business of Microchip - Product selector and ordering guides, latest Microchip press releases, listing of seminars and events, listings of Microchip sales offices, distributors and factory representatives Users of Microchip products can receive assistance through several channels: * Distributor or Representative * Local Sales Office * Field Application Engineer (FAE) * Technical Support Customers should contact their distributor, representative or Field Application Engineer (FAE) for support. Local sales offices are also available to help customers. A listing of sales offices and locations is included in the back of this document. Technical support is available through the web site at: http://microchip.com/support CUSTOMER CHANGE NOTIFICATION SERVICE Microchip's customer notification service helps keep customers current on Microchip products. Subscribers will receive e-mail notification whenever there are changes, updates, revisions or errata related to a specified product family or development tool of interest. To register, access the Microchip web site at www.microchip.com. Under "Support", click on "Customer Change Notification" and follow the registration instructions. 2014-2017 Microchip Technology Inc. DS20005262D-page 59 SST26VF016B 10.0 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X Device Tape/Reel Indicator Device: - SST26VF016B XXX X Operating Frequency Temperature / XX Package = 16 Mbit, 2.5V/3.0V, SQI Flash Memory WP#/Hold# pin Enable at power-up Tape and Reel Flag: T (blank) = Tape and Reel = Tube or Tray Operating Frequency: 104 = 104 MHz Temperature: I V = -40C to +85C = -40C to +105C Package: MF SM SN = WDFN (6mm x 5mm Body), 8-lead = SOIJ (5.28 mm Body), 8-lead = SOIC (3.90 mm Body), 8-lead Valid Combinations: SST26VF016B-104I/SM SST26VF016BT-104I/SM SST26VF016B-104I/SN SST26VF016BT-104I/SN SST26VF016B-104I/MF SST26VF016BT-104I/MF SST26VF016B-104V/SM SST26VF016BT-104V/SM SST26VF016B-104V/SN SST26VF016BT-104V/SN SST26VF016B-104V/MF SST26VF016BT-104V/MF NOTE: Contact your Microchip sales office for Automotive AECQ-100 ordering information. Valid automotive part numbers are not listed on this page. DS20005262D-page 60 2014-2017 Microchip Technology Inc. SST26VF016B 11.0 APPENDIX TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (1 OF 16) Bit Address Data Comments SFDP Header st SFDP Header: 1 DWORD 00H A7:A0 53H 01H A15:A8 46H 02H A23:A16 44H 03H A31:A24 50H SFDP Signature SFDP Signature=50444653H SFDP Header: 2nd DWORD 04H A7:A0 06H SFDP Minor Revision Number 05H A15:A8 01H SFDP Major Revision Number 06H A23:A16 02H Number of Parameter Headers (NPH)=3 07H A31:A24 FFH Unused. Contains FF and can not be changed. Parameter Headers JEDEC Flash Parameter Header: 08H 09H A7:A0 A15:A8 1st DWORD 00H Parameter ID Least Significant Bit (LSB) Number. When this field is set to 00H, it indicates a JEDEC-specified header. For vendor-specified headers, this field must be set to the vendor's manufacturer ID. 06H Parameter Table Minor Revision Number Minor revisions are either clarifications or changes that add parameters in existing Reserved locations. Minor revisions do NOT change overall structure of SFDP. Minor Revision starts at 00H. 0AH A23:A16 01H Parameter Table Major Revision Number Major revisions are changes that reorganize or add parameters to locations that are NOT currently Reserved. Major revisions would require code (BIOS/firmware) or hardware change to get previously defined discoverable parameters. Major Revision starts at 01H 0BH A31:A24 10H Parameter Table Length Number of DWORDs that are in the Parameter table JEDEC Flash Parameter Header: 2nd DWORD 0CH A7:A0 30H 0DH A15:A8 00H 0EH A23:A16 00H 0FH A31:A24 FFH Parameter Table Pointer (PTP) A 24-bit address that specifies the start of this header's Parameter table in the SFDP structure. The address must be DWORD-aligned. Parameter ID Most Significant Bit (MSB) Number. JEDEC Sector Map Parameter Header: 3rd DWORD 10H 11H 12H A7:A0 A15:A8 A23:A16 81H Parameter ID LSB Number. Sector Map Function-Specific Table is assigned 81H. 00H Parameter Table Minor Revision Number Minor revisions are either clarifications or changes that add parameters in existing Reserved locations. Minor revisions do NOT change overall structure of SFDP. Minor Revision starts at 00H. 01H Parameter Table Major Revision Number Major revisions are changes that reorganize or add parameters to locations that are NOT currently Reserved. Major revisions would require code (BIOS/firmware) or hardware change to get previously defined discoverable parameters. Major Revision starts at 01H 2014-2017 Microchip Technology Inc. DS20005262D-page 61 SST26VF016B TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (2 OF 16) Address Bit Address Data Comments 13H A31:A24 06H Parameter Table Length Number of DWORDs that are in the Parameter table JEDEC Flash Parameter Header: 4th DWORD 14H A7:A0 00H 15H A15:A8 01H 16H A23:A16 00H 17H A31:A24 FFH Parameter Table Pointer (PTP) This 24-bit address specifies the start of this header's Parameter Table in the SFDP structure. The address must be DWORD-aligned. Parameter ID MSB. Microchip (Vendor) Parameter Header: 5th DWORD 18H A7:A0 BFH ID Number Manufacture ID (vendor specified header) 19H A15:A8 00H Parameter Table Minor Revision Number 1AH A23:A16 01H Parameter Table major Revision Number, Revision 1.0 1BH A31:A24 18H Parameter Table Length, 24 Double Words Microchip (Vendor) Parameter Header: 6th DWORD 1CH A7:A0 00H 1DH A15:A8 02H 1EH A23:A16 00H 1FH A31:A24 01H Parameter Table Pointer (PTP) This 24-bit address specifies the start of this header's Parameter Table in the SFDP structure. The address must be DWORD-aligned. Used to indicate bank number (vendor specific). JEDEC Flash Parameter Table JEDEC Flash Parameter Table: 1st DWORD Block/Sector Erase Sizes 00: Reserved 01: 4 KByte Erase 10: Reserved 11: Use this setting only if the 4 Byte erase is unavailable. A1:A0 A2 30H FDH A3 Volatile Status Register 0: Target flash has nonvolatile status bit. Write/Erase commands do not require status register to be written on every power on. 1: Target flash has A4 Write Enable Opcode Select for Writing to Volatile Status Register 0: 0x50. Enables a status register write when bit 3 is set to 1. 1: 0x06 Enables a status register write when bit 3 is set to 1. A7:A5 31H Write Granularity 0: Single-byte programmable devices or buffer programmable devices with buffer is less than 64 bytes (32 Words). 1: For buffer programmable devices when the buffer size is 64 bytes (32 Words) or larger. A15:A8 DS20005262D-page 62 Unused. Contains 111b and can not be changed 20H 4 KByte Erase Opcode 2014-2017 Microchip Technology Inc. SST26VF016B TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (3 OF 16) Bit Address Data Supports (1-1-2) Fast Read 0: (1-1-2) Fast Read NOT supported 1: (1-1-2) Fast Read supported A16 Address Bytes Number of bytes used in addressing flash array read, write and erase 00: 3-Byte only addressing 01: 3- or 4-Byte addressing (e.g. defaults to 3-Byte mode; enters 4-Byte mode on command) 10: 4-Byte only addressing 11: Reserved A18:A17 Supports Double Transfer Rate (DTR) Clocking Indicates the device supports some type of double transfer rate clocking. 0: DTR NOT supported 1: DTR Clocking supported A19 A20 Supports (1-2-2) Fast Read Device supports single input opcode, dual input address, and dual output data Fast Read. 0: (1-2-2) Fast Read NOT supported. 1: (1-2-2) Fast Read supported. A21 Supports (1-4-4) Fast Read Device supports single input opcode, quad input address, and quad output data Fast Read 0: (1-4-4) Fast Read NOT supported. 1: (1-4-4) Fast Read supported. A22 Supports (1-1-4) Fast Read Device supports single input opcode & address and quad output data Fast Read. 0: (1-1-4) Fast Read NOT supported. 1: (1-1-4) Fast Read supported. A23 Unused. Contains `1' can not be changed. 32H 33H Comments F1H A31:A24 FFH Unused. Contains FF can not be changed JEDEC Flash Parameter Table: 2nd DWORD 34H A7:A0 FFH 35H A15:A8 FFH 36H A23:A16 FFH 37H A31:A24 00H Flash Memory Density SST26VF016B = 00FFFFFFH JEDEC Flash Parameter Table: 3rd DWORD A4:A0 38H 44H A7:A5 39H A15:A8 EBH 2014-2017 Microchip Technology Inc. (1-4-4) Fast Read Number of Wait states (dummy clocks) needed before valid output 00100b: 4 dummy clocks (16 dummy bits) are needed with a quad input address phase instruction Quad Input Address Quad Output (1-4-4) Fast Read Number of Mode Bits 010b: 2 dummy clocks (8 mode bits) are needed with a single input opcode, quad input address and quad output data Fast Read Instruction. (1-4-4) Fast Read Opcode Opcode for single input opcode, quad input address, and quad output data Fast Read. DS20005262D-page 63 SST26VF016B TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (4 OF 16) Bit Address Data Comments 08H (1-1-4) Fast Read Number of Wait states (dummy clocks) needed before valid output 01000b: 8 dummy bits are needed with a single input opcode & address and quad output data Fast Read Instruction A20:A16 3AH (1-1-4) Fast Read Number of Mode Bits 000b: No mode bits are needed with a single input opcode & address and quad output data Fast Read Instruction A23:A21 3BH A31:A24 6BH (1-1-4) Fast Read Opcode Opcode for single input opcode & address and quad output data Fast Read. JEDEC Flash Parameter Table: 4th DWORD A4:A0 3CH 08H (1-1-2) Fast Read Number of Mode Bits 000b: No mode bits are needed with a single input opcode & address and quad output data Fast Read Instruction A7:A5 3DH A15:A8 3BH A20:A16 3EH 80H A31:A24 (1-1-2) Fast Read Opcode Opcode for single input opcode& address and dual output data Fast Read. (1-2-2) Fast Read Number of Wait states (dummy clocks) needed before valid output 00010b: 0 clocks of dummy cycle. (1-2-2) Fast Read Number of Mode Bits (in clocks) 010b: 4 clocks of mode bits are needed A23:A21 3FH (1-1-2) Fast Read Number of Wait states (dummy clocks) needed before valid output 01000b: 8 dummy clocks are needed with a single input opcode, address and dual output data fast read instruction. BBH (1-2-2) Fast Read Opcode Opcode for single input opcode, dual input address, and dual output data Fast Read. JEDEC Flash Parameter Table: 5th DWORD Supports (2-2-2) Fast Read Device supports dual input opcode& address and dual output data Fast Read. 0: (2-2-2) Fast Read NOT supported. 1: (2-2-2) Fast Read supported. A0 40H A3:A1 FEH A4 A7:A5 Reserved. Bits default to all 1's. Supports (4-4-4) Fast Read Device supports Quad input opcode & address and quad output data Fast Read. 0: (4-4-4) Fast Read NOT supported. 1: (4-4-4) Fast Read supported. Reserved. Bits default to all 1's. 41H A15:A8 FFH Reserved. Bits default to all 1's. 42H A23:A16 FFH Reserved. Bits default to all 1's. 43H A31:A24 FFH Reserved. Bits default to all 1's. DS20005262D-page 64 2014-2017 Microchip Technology Inc. SST26VF016B TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (5 OF 16) Bit Address Data th JEDEC Flash Parameter Table: 6 Comments DWORD 44H A7:A0 FFH Reserved. Bits default to all 1's. 45H A15:A8 FFH Reserved. Bits default to all 1's. 00H (2-2-2) Fast Read Number of Wait states (dummy clocks) needed before valid output 00000b: No dummy bit is needed A20:A16 46H (2-2-2) Fast Read Number of Mode Bits 000b: No mode bits are needed A23:A21 47H A31:A24 FFH (2-2-2) Fast Read Opcode Opcode for dual input opcode& address and dual output data Fast Read. (not supported) JEDEC Flash Parameter Table: 7th DWORD 48H A7:A0 FFH Reserved. Bits default to all 1's. 49H A15:A8 FFH Reserved. Bits default to all 1's. 44H (4-4-4) Fast Read Number of Wait states (dummy clocks) needed before valid output 00100b: 4 clocks dummy are needed with a quad input opcode & address and quad output data Fast Read Instruction A20:A16 4AH (4-4-4) Fast Read Number of Mode Bits 010b: 2 clocks mode bits are needed with a quad input opcode & address and quad output data Fast Read Instruction A23:A21 4BH A31:A24 0BH (4-4-4) Fast Read Opcode Opcode for quad input opcode/address, quad output data Fast Read JEDEC Flash Parameter Table: 8th DWORD 4CH A7:A0 0CH Sector Type 1 Size 4 KByte, Sector/block size = 2N bytes 4DH A15:A8 20H Sector Type 1 Opcode Opcode used to erase the number of bytes specified by Sector Type 1 Size 4EH A23:A16 0DH Sector Type 2 Size 8 KByte, Sector/block size = 2N bytes 4FH A31:A24 D8H Sector Type 2 Opcode Opcode used to erase the number of bytes specified by Sector Type 2 Size JEDEC Flash Parameter Table: 9th DWORD 50H A7:A0 0FH Sector Type 3 Size 32 KByte, Sector/block size = 2N bytes 51H A15:A8 D8H Sector Type 3 Opcode Opcode used to erase the number of bytes specified by Sector Type 3 Size 52H A23:A16 10H Sector Type 4 Size 64 KByte, Sector/block size = 2N bytes 53H A31:A24 D8H Sector Type 4 Opcode Opcode used to erase the number of bytes specified by Sector Type 4 Size 2014-2017 Microchip Technology Inc. DS20005262D-page 65 SST26VF016B TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (6 OF 16) Bit Address Data th JEDEC Flash Parameter Table: 10 A7:A4 Erase Type 1 Erase, Typical time Typical Time = (count +1)*units 1ms to 32ms, 16ms to 512ms, 128ms to 4096ms, 1s to 32s 10:9 units (00b:1ms, 01b: 16ms, 10b:128ms, 11b:1s) A8:A4 count = 18 = 10010b A10:A9 unit = 1ms = 00b A10:A8 A10:A8=001b A15:A11 Erase Type 2 Erase, Typical time Typical time = (count+1)*units 1ms to 32ms, 16ms to 512ms, 128ms to 4096ms, 1s to 32s 17:16 units (00b:1ms, 01b:16ms, 10b:128ms, 11b:1s) A15:A11 count = 18 =10010b A17:A16 unit = 1ms =00b 54H 56H 20H 91H A17:A16 A17:A16=00b A23:A18 Erase Type 3 Erase, Typical time Typical time = (count+1)*units 1ms to 32ms, 16ms to 512ms, 128ms to 4096ms, 1s to 32s 24:23 units (00b: 1ms, 01b: 16ms, 10b:128ms, 11b:1s) A22:A18 count = 18 = 10010b A24:A23 unit = 1ms = 00b 48H A24 57H DWORD Multiplier from typical erase time to maximum erase time Maximum time = 2*(count + 1)*Typical erase time Count = 0 A3:A0= 0000b A3:A0 55H Comments A31:A25 A24=0b 24H Erase Type 4 Erase, Typical time Typical time = (count+1)*units 1ms to 32ms, 16ms to 512ms, 128ms to 4096ms, 1s to 32s 31:30 units (00b: 1ms, 01b: 16ms, 10b:128ms, 11b:1s) A29:A25 count=18=10010b A31:A30 unit = 1ms =00b JEDEC Flash Parameter Table: 11th DWORD A3:A0 58H 80H Multiplier from Typical Program Time to Maximum Program Time Maximum time = 2*(count +1)*Typical program time. Count =0 A3:A0=0000b A7:A4 Page Size Page size = 2N bytes. N=8 A7:A4 =1000b A13:A8 Page Program Typical time Program time = (count+1)*units 13 units (0b: 8s, 1b: 64s) A12:A8 count=11 = 01111b A13 unit = 64s = 1b 59H 6FH A15:A14 DS20005262D-page 66 Byte Program Typical time, first byte Typical time = (count+1)*units 18 units (0b: 1s, 1b: 8s) A17:A14 count = 5 = 0101b A18 =8s=1b 2014-2017 Microchip Technology Inc. SST26VF016B TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (7 OF 16) Bit Address Data A18:A16 5AH A23:A19 A18:A16=101b 1DH A30:A:24 5BH Comments 81H Byte Program Typical time, Additional Byte Typical time = (count+1)*units 23 units (0b: 1s, 1b: 8s) A22:A19 count = 0011b A23=1s=0b Chip Erase Typical Time Typical time = (count+1)*units 16ms to 512ms, 256ms to 8192ms, 4s to 128s, 64s to 2048s A28:A24 count =1=00001b A30:A29 units =16ms=00b Reserved A31=1b A31 JEDEC Flash Parameter Table: 12th DWORD Prohibited Operations During Program Suspend xxx0b: May not initiate a new erase anywhere xxx1b:May not initiate a new erase in the program suspended page size xx0xb:May not initiate a new page program anywhere xx1xb: May not initiate a new page program in program suspended page size. x0xxb:Refer to the Data Sheet x1xxb: May not initiate a read in the program suspended page size 0xxxb: Additional erase or program restrictions apply 1xxxb: The erase and program restrictions in bits 1:0 are sufficient A3:A0 5CH EDH A7:A4 A8 Reserved = 1b Program Resume to Suspend Interval The device requires this typical amount of time to make progress on the program operation before allowing another suspend. Interval =500s Program resume to suspend interval =(count+1)*64s A12:A9= 7 =0111b A12:A9 5DH Prohibited Operation During Erase Suspend xxx0b: May not initiate a new erase anywhere xxx1b:May not initiate a new erase in the erase suspended page size xx0xb:May not initiate a new page program anywhere xx1xb: May not initiate a new page program in erase suspended erase type size. x0xxb:Refer to the Data Sheet x1xxb: May not initiate a read in the erase suspended page size 0xxxb: Additional erase or program restrictions apply 1xxxb: The erase and program restrictions in bits 5:4 are sufficient 0FH A15:A13 2014-2017 Microchip Technology Inc. Suspend In-progress Program Max Latency Maximum time required by the flash device to suspend an in-progress program and be ready to accept another command which accesses the flash array. Max latency = 25s program max latency =(count+1)*units units (00b:128ns, 01b:1s, 10b:8s, 11b:64s) A17:A13= count = 24 = 11000b A19:A18 = 1s =01b DS20005262D-page 67 SST26VF016B TABLE 11-1: Address 5EH SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (8 OF 16) Bit Address Data Comments A19:A16 0111b A23:A20 Erase Resume to Suspend Interval The device requires this typical amount of time to make progress on the erase operation before allowing another suspend. Interval = 500s Erase resume to suspend interval =(count+1)*64s A23:A20= 7 =0111b 77H A30:A24 5FH 38H Suspend In-progress Erase Max Latency Maximum time required by the flash device to suspend an in-progress erase and be ready to accept another command which accesses the flash array. Max latency = 25s Erase max latency =(count+1)*units units (00b:128ns, 01b:1s, 10b:8s, 11b:64s) A28:A24= count = 24 = 11000b A30:A29 = 1s =01b Suspend/Resume supported 0:supported 1:not supported A31 JEDEC Flash Parameter Table: 13th DWORD 60H A7:A0 30H Program Resume Instruction 61H A15:A8 B0H Program Suspend Instruction 62H A23:A16 30H Resume Instruction 63H A31:A24 B0H Suspend Instruction JEDEC Flash Parameter Table: 14th A1:A0 64H A7:A2 Reserved = 11b F7H A14:A8 65H A9H A22:A16 A23 A31 Exit Deep Power-down to next operation delay:10s Delay = (count+1)*unit A12:A8 = count = 9 = 01001b A14:A13 units = 01b = 1s A22:A16 = 1010101b D5H A30:A24 67H Status Register Polling Device Busy 111101b: Use of legacy polling is supported by reading the status register with 05h instruction and checking WIP bit [0] (0=ready, 1=busy) Exit Power-down Instruction: ABH = 10101011b A15 = 1b A15 66H DWORD Enter Power-down instruction: B9H = 10111001b A23 = 1b A30:A24 = 1011100 5CH Deep Power-down Supported 0:supported 1:not supported JEDEC Flash Parameter Table: 15th DWORD A3:A0 68H 29H A7:A4 DS20005262D-page 68 4-4-4 Mode Disable Sequences Xxx1b: issue FF instruction 1xxxb: issue the Soft Reset 66/99 sequence. 4-4-4 mode enable sequences X_xx1xb: issue instruction 38h 2014-2017 Microchip Technology Inc. SST26VF016B TABLE 11-1: Address 69H 6AH SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (9 OF 16) Bit Address Data Comments A8 4-4-4 Mode Enable Sequences A8 = 0 A9 0-4-4 Mode Supported 0:not supported 1:supported C2H A15:A10 0-4-4 Mode Exit Method X1_xxxx:Mode Bit[7:0] Not= AXh 1x_xxxx Reserved = 1 A19:A16 0-4-4 Mode Entry Method X1xxb: M[7:0]=AXh 1xxxb:Reserved =1 A22:A20 5CH Quad Enable Requirements (QER) 101b: Quad Enable is bit 1 of the configuration register. HOLD and Reset Disable 0:feature is not supported A23 6BH A31:A24 JEDEC Flash Parameter Table: 6C A6:A0 FFH 16th Reserved bits = 0xFF DWORD F0H A7 Reserved =1b A13:A8 6D Volatile or Non-Volatile Register and Write Enable Instructions for Status Register 1 Xx1_xxxxb:Status Register 1 contains a mix of volatile and non-volatile bits. The 06h instruction is used to enable writing to the register. X1x_xxxxb: Reserved = 1 1xx_xxxxb: Reserved = 1 30H Soft Reset and Rescue Sequence Support X1_xxxxb: reset enable instruction 66h is issued followed by reset instruction 99h. 1x_xxxxb: exit 0-4-4 mode is required prior to other reset sequences. A15:A14 Exit 4-Byte Addressing Not supported 6E A23:A16 C0H Exit 4-Byte Addressing Not supported A21:A14 = 000000b A23 and A22 are Reserved bits which are = 1 6F A31:A24 80H Enter 4-Byte Addressing Not supported 1xxx_xxxx: Reserved = 1 JEDEC Sector Map Parameter Table A7:A0 FFH Sector Map A7:A2=Reserved=111111b A1=Descriptor Type = Map=1b A0=Last map = 1b 101H A15:A8 00H Configuration ID = 00h 102H A23:A16 04H Region Count = 5 Regions 103H A31:A24 FFH Reserved = FFH 104H A7:A0 F3H Region 0 supports 4 KByte erase and 8 KByte erase A3:A0=0011b A7:A4=Reserved=1111b 100H 2014-2017 Microchip Technology Inc. DS20005262D-page 69 SST26VF016B TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (10 OF 16) Bit Address Data Comments Region 0 Size 4 * 8 KBytes = 32 KBytes Count=32 KBytes/256 Bytes= 128 Value = count -1 =127 A31:A8 = 00007Fh 105H A15:A8 7FH 106H A23:A16 00H 107H A31:A24 00H 108H A7:A0 F5H Region 1 supports 4 KByte erase and 32 KByte erase A3:A0 = 0101b A7:A4=Reserved = 1111b Region 1 size 1 * 32Kbytes = 32Kbytes Count=32Kbytes/256 bytes= 128 Value = count -1 =127 A31:A8 = 00007Fh 109H A15:A8 7FH 10AH A23:A16 00H 10BH A31:A24 00H 10CH A7:A0 F9H Region 2 supports 4 KByte erase and 64 KByte erase A3:A0 = 1001b A7:A4=Reserved = 1111b Region 2 size 30 * 64 KBytes = 1920 KBytes Count=1920 KBytes/256 Bytes= 7680 Value = count -1 =7679 A31:A8 = 001DFFh 10DH A15:A8 FFH 10EH A23:A16 1DH 10FH A31:A24 00H 110H A7:A0 F5H Region 3 supports 4 KByte erase and 32 KByte erase A3:A0 = 0101b A7:A4=Reserved = 1111b Region 3 size 1 * 32 KBytes = 32 KBytes Count=32 KBytes/256 bytes= 128 Value = count -1 =127 A31:A8 = 00007Fh 111H A15:A8 7FH 112H A23:A16 00H 113H A31:A24 00H 114H A7:A0 F3H Region 4 supports 4 KByte erase and 8 KByte erase A3:A0=0011b A7:A4=Reserved=1111b Region 4 Size 4 * 8 KBytes = 32 KBytes Count=32 KBytes/256 bytes= 128 Value = count -1 =127 A31:A8 = 00007Fh 115H A15:A8 7FH 116H A23:A16 00H 117H A31:A24 00H DS20005262D-page 70 2014-2017 Microchip Technology Inc. SST26VF016B TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (11 OF 16) Bit Address Data Comments SST26VF016B (Vendor) Parameter Table SST26VF016B Identification 200H A7:A0 BFH Manufacturer ID 201H A15:A8 26H Memory Type 202H A23:A16 41H Device ID SST26VF016B=41H 203H A31:A24 FFH Reserved. Bits default to all 1's. SST26VF016B Interface Interfaces Supported 000: SPI only 001: Power up default is SPI; Quad can be enabled/disabled 010: Reserved : : 111: Reserved A2:A0 A3 204H B9H Supports Enable Quad 0: not supported 1: supported Supports Hold#/Reset# Function 000: Hold# 001: Reset# 010: HOLD/Reset# 011: Hold# & I/O when in SQI(4-4-4), 1-4-4 or 1-1-4 Read A6:A4 A7 Supports Software Reset 0: not supported 1: supported A8 Supports Quad Reset 0: not supported 1: supported A10:A9 Reserved. Bits default to all 1's A13:A11 Byte-Program or Page-Program (256 Bytes) 011: Byte Program/Page Program in SPI and Quad Page Program once Quad is enabled 205H DFH A14 Program-Erase Suspend Supported 0: Not Supported 1: Program/Erase Suspend Supported A15 Deep Power-Down Mode Supported 0: Not Supported 1: Deep Power-Down Mode Supported 2014-2017 Microchip Technology Inc. DS20005262D-page 71 SST26VF016B TABLE 11-1: Address 206H SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (12 OF 16) Bit Address Data Comments A16 OTP Capable (Security ID) Supported 0: not supported 1: supported A17 Supports Block Group Protect 0: not supported 1: supported A18 FDH Supports Independent Block Protect 0: not supported 1: supported Supports Independent non Volatile Lock (Block or Sector becomes OTP) 0: not supported 1: supported A19 A23:A20 Reserved. Bits default to all 1's. 207H A31:A24 FFH Reserved. Bits default to all 1's. 208H A7:A0 30H F2H VDD Minimum Supply Voltage 2.3V (F230H) 209H A15:A8 20AH A23:A16 60H 20BH A31:A24 F3H 20CH A7:A0 32H Typical time out for Byte-Program: 50 s Typical time out for Byte Program is in s. Represented by conversion of the actual time from the decimal to hexadecimal number. 20DH A15:A8 FFH Reserved. Bits default to all 1's. 20EH A23:A16 0AH Typ time out for page program: 1.0ms (xxH*(0.1ms) VDD Maximum Supply Voltage 3.6V (F360H) 20FH A31:A24 12H Typical time out for Sector-Erase/Block-Erase: 18 ms Typical time out for Sector/Block-Erase is in ms. Represented by conversion of the actual time from the decimal to hexadecimal number. 210H A7:A0 23H Typical time out for Chip-Erase: 35 ms Typical time out for Chip-Erase is in ms. Represented by conversion of the actual time from the decimal to hexadecimal number. 211H A15:A8 46H Max. time out for Byte-Program: 70 s Typical time out for Byte Program is in s. Represented by conversion of the actual time from the decimal to hexadecimal number. 212H A23:A16 FFH Reserved. Bits default to all 1's. 213H A31:A24 0FH Max time out for Page-Program: 1.5ms. Typical time out for Page Program in xxH * (0.1ms) ms 214H A7:A0 19H Max. time out for Sector Erase/Block Erase: 25ms. Max time out for Sector/Block Erase in ms 215H A15:A8 32H Max. time out for Chip Erase: 50ms. Max time out for Chip Erase in ms. 216H A23:A16 0FH Max. time out for Program Security ID: 1.5 ms Max time out for Program Security ID in xxH*(0.1ms) ms 217H A31:A24 19H Max. time out for Write-Protection Enable Latency: 25 ms Max time out for Write-Protection Enable Latency is in ms. Represented by conversion of the actual time from the decimal to hexadecimal number. 218H A23:A16 19H Max. time Write-Suspend Latency: 25 s Max time out for Write-Suspend Latency is in s. Represented by conversion of the actual time from the decimal to hexadecimal number. 219H A31:A24 03H Max. time to Deep Power-Down: 3s = 03H) DS20005262D-page 72 2014-2017 Microchip Technology Inc. SST26VF016B TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (13 OF 16) Address Bit Address Data Comments 21AH A23:A16 0AH Max. time out from Deep Power-Down mode to Standby mode: 10 s = 0AH 21BH A31:A24 FFH Reserved. Bits default to all 1's. 21CH A23:A16 FFH Reserved. Bits default to all 1's. 21DH A31:A24 FFH Reserved. Bits default to all 1's. 21EH A23:A16 FFH Reserved. Bits default to all 1's. 21FH A31:A24 FFH Reserved. Bits default to all 1's. 00H No Operation Supported Instructions 220H A7:A0 221H A15:A8 66H Reset Enable 222H A23:A16 99H Reset Memory 223H A31:A24 38H Enable Quad I/O 224H A7:A0 FFH Reset Quad I/O 225H A15:A8 05H Read Status Register 226H A23:A16 01H Write Status Register 227H A31:A24 35H Read Configuration Register 228H A7:A0 06H Write Enable 229H A15:A8 04H Write Disable 22AH A23:A16 02H Byte Program or Page Program 22BH A31:A24 32H SPI Quad Page Program 22CH A7:A0 B0H Suspends Program/Erase 22DH A15:A8 30H Resumes Program/Erase 22EH A23:A16 72H Read Block-Protection register 22FH A31:A24 42H Write Block Protection Register 230H A7:A0 8DH Lock Down Block Protection Register 231H A15:A8 E8H non-Volatile Write-Lock Down Register 232H A23:A16 98H Global Block Protection Unlock 233H A31:A24 88H Read Security ID 234H A7:A0 A5H Program User Security ID Area 235H A15:A8 85H Lockout Security ID Programming 236H A23:A16 C0H Set Burst Length 237H A31:A24 9FH JEDEC-ID 238H A7:A0 AFH Quad J-ID 239H A15:A8 5AH SFDP 23AH A23:A16 B9H Deep Power-Down Mode 23BH A31:A24 ABH Release Deep Power-Down Mode 06H (1-4-4) SPI nB Burst with Wrap Number of Wait states (dummy clocks) needed before valid output 00110b: 6 clocks of dummy cycle A4:A0 23CH (1-4-4) SPI nB Burst with Wrap Number of Mode Bits 000b: Set Mode bits are not supported A7:A5 23DH A15:A8 ECH 2014-2017 Microchip Technology Inc. (1-4-4) SPI nB Burst with Wrap Opcode DS20005262D-page 73 SST26VF016B TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (14 OF 16) Bit Address Data Comments 06H (4-4-4) SQI nB Burst with Wrap Number of Wait states (dummy clocks) needed before valid output 00110b: 6 clocks of dummy cycle A20:A16 23EH (4-4-4) SQI nB Burst with Wrap Number of Mode Bits 000b: Set Mode bits are not supported A23:A21 23FH A31:A24 0CH (4-4-4) SQI nB Burst with Wrap Opcode 00H (1-1-1) Read Memory Number of Wait states (dummy clocks) needed before valid output 00000b: Wait states/dummy clocks are not supported. A4:A0 240H (1-1-1) Read Memory Number of Mode Bits 000b: Mode bits are not supported, A7:A5 241H A15:A8 03H (1-1-1) Read Memory Opcode 08H (1-1-1) Read Memory at Higher Speed Number of Wait states (dummy clocks) needed before valid output 01000: 8 clocks (8 bits) of dummy cycle A20:A16 242H (1-1-1) Read Memory at Higher Speed Number of Mode Bits 000b: Mode bits are not supported, A23:A21 243H A31:A24 0BH (1-1-1) Read Memory at Higher Speed Opcode 244H A7:A0 FFH Reserved. Bits default to all 1's. 245H A15:A8 FFH Reserved. Bits default to all 1's. 246H A23:A16 FFH Reserved. Bits default to all 1's. 247H A31:A24 FFH Reserved. Bits default to all 1's. A7:A0 FFH Security ID size in bytes Example: If the size is 2 KBytes, this field would be 07FFH Security ID 248H Security ID Range 249H A15:A8 07H Unique ID (Pre-programmed at factory) 0000H - 0007H User Programmable 0008H - 07FFH 24AH A23:A16 FFH Reserved. Bits default to all 1's. 24BH A31:A24 FFH Reserved. Bits default to all 1's. Memory Organization/Block Protection Bit Mapping 1 24CH A7:A0 02H Section 1: Sector Type Number: Sector type in JEDEC Parameter Table (bottom, 8 KByte) 24DH A15:A8 02H Section 1 Number of Sectors Four of 8KB block (2n) FFH Section 1 Block Protection Bit Start ((2m) +1)+ c, c=FFH or -1, m= 5 for 16Mb Address bits are Read Lock bit locations and Even Address bits are Write Lock bit locations. The most significant (left-most) bit indicates the sign of the integer; it is sometimes called the sign bit. If the sign bit is zero, then the number is greater than or equal to zero, or positive. If the sign bit is one then the number is less than zero or negative. 24EH A23:A16 DS20005262D-page 74 2014-2017 Microchip Technology Inc. SST26VF016B TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (15 OF 16) Bit Address Data Comments 24FH A31:A24 06H Section 1 (bottom) Block Protection Bit End ((2m) +1)+ c, c=06H or 6, m= 5 for 16Mb Address bits are Read Lock bit locations and Even Address bits are Write Lock bit locations. The most significant (left-most) bit indicates the sign of the integer; it is sometimes called the sign bit. If the sign bit is zero, then the number is greater than or equal to zero, or positive. If the sign bit is one then the number is less than zero or negative. 250H A7:A0 03H Section 2: Sector Type Number Sector type in JEDEC Parameter Table (32KB Block) 251H A15:A8 00H Section 2 Number of Sectors One of 32KB Block (2n, n=0) FDH Section 2 Block Protection Bit Start ((2m) +1)+ c, c=FDH or -3, m= 5 for 16Mb The most significant (left-most) bit indicates the sign of the integer; it is sometimes called the sign bit. If the sign bit is zero, then the number is greater than or equal to zero, or positive. If the sign bit is one then the number is less than zero or negative. 252H A23:A16 253H A31:A24 FDH Section 2 Block Protection Bit End ((2m) +1)+ c, c=FDH or -3, m= 5 for 16Mb The most significant (left-most) bit indicates the sign of the integer; it is sometimes called the sign bit. If the sign bit is zero, then the number is greater than or equal to zero, or positive. If the sign bit is one then the number is less than zero or negative. 254H A7:A0 04H Section 3: Sector Type Number Sector type in JEDEC Parameter Table (64KB Block) 255H A15:A8 05H Section 3 Number of Sectors 126 of 64KB Block (2n-2, n= 5 for 16Mb 256H A23:A16 00H Section 3 Block Protection Bit Start Section 3 Block Protection Bit starts at 00H 257H A31:A24 FCH Section 3 Block Protection Bit End ((2m) +1)+ c, c=FCH or -4, m= 5 for 16Mb 258H A7:A0 03H Section 4: Sector Type Number Sector type in JEDEC Parameter Table (32KB Block) 259H A15:A8 00H Section 4 Number of Sectors One of 32KB Block (2n, n=0) FEH Section 4 Block Protection Bit Start ((2m) +1)+ c, c=FEH or -2, m= 5 for 16Mb The most significant (left-most) bit indicates the sign of the integer; it is sometimes called the sign bit. If the sign bit is zero, then the number is greater than or equal to zero, or positive. If the sign bit is one then the number is less than zero or negative. 25AH A23:A16 25BH A31:A24 FEH Section 4 Block Protection Bit End ((2m) +1)+ c, c=FEH or -2, m= 5 for 16Mb The most significant (left-most) bit indicates the sign of the integer; it is sometimes called the sign bit. If the sign bit is zero, then the number is greater than or equal to zero, or positive. If the sign bit is one then the number is less than zero or negative. 25CH A7:A0 02H Section 5 Sector Type Number: Sector type in JEDEC Parameter Table (top, 8 KByte) 25DH A15:A8 02H Section 5 Number of Sectors Four of 8KB block (2^n) 2014-2017 Microchip Technology Inc. DS20005262D-page 75 SST26VF016B TABLE 11-1: Address SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (16 OF 16) Bit Address 25EH A23:A16 25FH A31:A24 Data Comments 07H Section 5 Block Protection Bit Start ((2m) +1)+ c, c=07H or 7, m= 5 for 16Mb Address bits are Read Lock bit locations and Even Address bits are Write Lock bit locations. The most significant (left-most) bit indicates the sign of the integer; it is sometimes called the sign bit. If the sign bit is zero, then the number is greater than or equal to zero, or positive. If the sign bit is one then the number is less than zero or negative. 0EH Section 5 (bottom) Block Protection Bit End (((2m) +1)+ c, c=0EH or 14, m= 5 for 16Mb Address bits are Read Lock bit locations and Even Address bits are Write Lock bit locations. The most significant (left-most) bit indicates the sign of the integer; it is sometimes called the sign bit. If the sign bit is zero, then the number is greater than or equal to zero, or positive. If the sign bit is one then the number is less than zero or negative. 1. See "Mapping Guidance Details" for more detailed mapping information 11.1 Mapping Guidance Details The SFDP Memory Organization/Block Protection Bit Mapping defines the memory organization including uniform sector/block sizes and different contiguous sectors/blocks sizes. In addition, this bit defines the TABLE 11-2: number of these uniform and different sectors/blocks from address 000000H to the full range of Memory and the associated Block Locking Register bits of each sector/block. Each major Section is defined as follows: SECTION DEFINITION Major Section X Section X: Sector Type Number Section X: Number of Sectors Section X: Block-Protection Register Bit Start Location Section X: Block-Protection Register Bit End Location A Major Section consists of Sector Type Number, Number of Sector of this type, and the Block-Protection Bit Start/End locations. This is tied directly to JEDEC Flash Parameter Table Sector Size Type (in 7th DWORD and 8th DWORD section). Note that the contiguous 4KByte Sectors across the full memory range are not included on this section because they are not defined in the JEDEC Flash Parameter Table Sector Size Type section. Only the sectors/blocks that are dependently tied with the Block-Protection Register bits are defined. A major section is a partition of contiguous same-size sectors/blocks. There will be several Major Sections as you dissect across memory from 000000h to the full range. Similar sector/block size that re-appear may be defined as a different Major Section. 11.1.1 SECTOR TYPE NUMBER Sector Type Number is the sector/block size typed defined in JEDEC Flash Parameter Table: SFDP address locations 4CH, 4EH, 50H and 52H. Sector Type 1, which is represented by 01H, is located at address 4CH. Sector Type 2, which is represented by 02H, is located at address location 4EH. Sector Type 3, which is represented by 03H, is located at address location 50H. Sector Type 4, represented by 04H, is DS20005262D-page 76 located at address location 52H. Contiguous Same Sector Type # Size can re-emerge across the memory range and this Sector Type # will indicate that it is a separate/independent Major Section from the previous contiguous sectors/blocks. 11.1.2 NUMBER OF SECTORS Number of Sectors represents the number of contiguous sectors/blocks with similar size. A formula calculates the contiguous sectors/blocks with similar size. Given the sector/block size, type, and the number of sectors, the address range of these sectors/blocks can be determined along with specific Block Locking Register bits that control the read/write protection of each sectors/blocks. 11.1.3 BLOCK-PROTECTION REGISTER BIT START LOCATION (BPSL) Block-Protection Register Bit Start Location (BPSL) designates the start bit location in the Block-Protection Register where the first sector/block of this Major Section begins. If the value of BPSL is 00H, this location is 2014-2017 Microchip Technology Inc. SST26VF016B the 0 bit location. If the value is other than 0, then this value is a constant value adder (c) for a given formula, (2m + 1) + (c). See "Memory Configuration". From the initial location, there will be a bit location for every increment by 1 until it reaches the Block Protection Register Bit End Location (BPEL). This number range from BPSL to BPEL will correspond to, and be equal to, the number of sectors/blocks on this Major Section. 11.1.4 BLOCK PROTECTION REGISTER BIT END LOCATION (BPEL) The value in this field is a constant value adder (c) for a given formula or equation, (2m + 1) + (c). See "Memory Configuration" 11.1.5 MEMORY CONFIGURATION For the SST26VF016B family, the memory configuration is setup with different contiguous block sizes from bottom to the top of the memory. For example, starting from bottom of memory it has four 8KByte blocks, one 32KByte block, x number of 64KByte blocks depending on memory size, then one 32KByte block, and four 8KByte block on the top of memory. See Table 11-3. Block Protection Register Bit End Location designates the end bit location in the Block Protection Register bit where the last sector/block of this Major Section ends. TABLE 11-3: MEMORY BLOCK DIAGRAM REPRESENTATION 8 KByte Bottom Block (from 000000H) Section 1: Sector Type Number Section 1: Number of Sectors Section 1: Block-Protection Register Bit Start Location Section 1: Block-Protection Register Bit End Location 32 KByte Section 2: Sector Type Number Section 2: Number of Sectors Section 2: Block-Protection Register Bit Start Location Section 2: Block-Protection Register Bit End Location 64 KByte Section 3: Sector Type Number Section 3: Number of Sectors Section 3: Block-Protection Register Bit Start Location Section 3: Block-Protection Register Bit End Location 32 KByte Section 4: Sector Type Number Section 4: Number of Sectors Section 4: Block-Protection Register Bit Start Location Section 4: Block-Protection Register Bit End Location 8 KByte (Top Block) Section 5: Sector Type Number Section 5: Number of Sectors Section 5: Block-Protection Register Bit Start Location Section 5: Block-Protection Register Bit End Location Classifying these sector/block sizes via the Sector Type derived from JEDEC Flash Parameter Table: SFDP address locations 4EH, 50H, and 52His as follows: * 8 KByte Blocks are classified as Sector Type 2 (@4EH of SFDP) * 32 KByte Blocks are classified as Sector Type 3 (@50H of SFDP) * 64 KByte Blocks are classified as Sector Type 4 (@52H of SFDP) 2014-2017 Microchip Technology Inc. For the Number of Sectors associated with the contiguous sectors/blocks, a formula is used to determine the number of sectors/blocks of these Sector Types: * 8KByte Block (Type 2) is calculated by 2n. n is a byte. * 32KByte Block (Type 3) is calculated by 2n. n is a byte. * 64KByte Block (Type 4) is calculated by (2m - 2). m can either be a 4, 5, 6, 7 or 8 depending on the memory size. This m field is going to be used for the 64KByte Block Section and will also be used for the Block Protection Register Bit Location formula. DS20005262D-page 77 SST26VF016B m will have a constant value for specific densities and is defined as: * * * * * 8Mbit = 4 16Mbit = 5 32Mbit = 6 64Mbit = 7 128Mbit = 8 Block Protect Register Start/End Bits are mapped in the SFDP by using the formula (2m + 1) + (c). "m" is a constant value that represents the different densities from 8Mbit to 128Mbit (used also in the formula calculating number of 64Kbyte Blocks above). The values that are TABLE 11-4: going to be placed in the Block Protection Bit Start/End field table are the constant value adder (c) in the formula and are represented in two's compliment except when the value is 00H. If the value is 00H, this location is the 0 bit location. If the value is other than 0, then this is a constant value adder (c) that will be used in the formula. The most significant (left most) bit indicates the sign of the integer; it is sometimes called the sign bit. If the sign bit is zero, then the number is greater than or equal to zero, or positive. If the sign bit is one, then the number is less than zero, or negative. See Table 11-4 for an example of this formula. BPSL/BPEL EQUATION WITH ACTUAL CONSTANT ADDER DERIVED FROM THE FORMULA (2M + 1) + (C) Block Size 8 Mbit to 128 Mbit Comments 8 KByte (Type 2) Bottom BPSL = (2m + 1) + 0FFH BPEL = (2m + 1) + 04H 0FFH = -1; 06H = 6 Odd address bits are Read-Lock bit locations and even address bits are Write-Lock bit locations. 32 KByte (Type3) BPSL = BPEL= (2m + 1) + 0FDH 0FDH= -3 64 KByte (Type 4) BPSL = 00H BPEL = (2m + 1) + 0FCH 00H is Block-Protection Register bit 0 location; 0FCH = -4 32 KByte (Type 3) BPSL = BPEL= (2m + 1) + 0FEH 0FEH=-2 8 KByte (Type 2) Top DS20005262D-page 78 (2m BPSL = + 1) + 07H BPEL = (2m + 1) + 0EH 07H = 7; 0EH = 14 Odd address bits are Read-Lock bit locations and even address bits are Write-Lock bit locations. 2014-2017 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. The Embedded Control Solutions Company and mTouch are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet, KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. (c) 2014-2017, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. ISBN: 978-1-5224-2474-1 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2014-2017 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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