2N7085
Prelim. 7/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
VDS Drain – Source Voltage
VGS Gate – Source Voltage
IDContinuous Drain Current (TJ= 150°C) TC= 25°C
TC= 100°C
IDM Pulsed Drain Current
PDPower Dissipation TC= 25°C
TC= 100°C
TJ, Tstg Operating Junction and Storage Temperature Range
TLLead Temperature (1/16” from case for 10 sec.)
100V
±20V
20A
12A
80A
60W
20W
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm(inches)
123
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.41 (0.410)
10.92 (0.430)
13.38 (0.527)
13.64 (0.537)
16.38 (0.645)
16.89 (0.665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
12.07 (0.500)
19.05 (0.750)
Dia.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
TO–257AB Metal Package
N–CHANNEL
ENHANCEMENT MODE
TRANSISTOR
FEATURES
• TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
• SCREENING OPTIONS AVAILBLE
• SIMPLE DRIVE REQUIREMENTS
Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
V(BR)DSS 100V
ID(A) 20A
RDS(on) 0.075
WW
WW
Parameter Min. Typ. Max. Unit
RthJC Thermal resistance Junction-Case 2.1
RthJA Thermal resistance Junction-ambient 80 °C/W
RthCS Thermal resistance Case to Sink 1.0
2N7085
Prelim. 7/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
VGS = 0 ID= 250µA
VDS = VGS ID= 250µA
VDS = 0 VGS = ±20V
VDS = 80V
VGS = 0 TJ= 125°C
VDS = 10V VGS = 10V
VGS = 10V
ID= 12A TJ= 125°C
VDS = 15V IDS = 12A
VGS = 0
VDS = 25V
f = 1MHz
VDS = 0.5 x V(BR)DSS50V
VGS = 10V ID= 20A
VDD = 50V ID= 20A
VGEN =10V
RL= 2.5
W
RG= 4.7
W
IF= 20A VGS = 0
IF= 20A
di/dt = 100A/µs
ELECTRICAL CHARACTERISTICS (TJ= 25°C unless otherwise stated)
THERMAL RESISTANCECHARACTERISTICS
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current1
Drain – Source On–State
Resistance 1
Forward Transconductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate Source Charge2
Gate Drain Charge2
Turn–On Delay Time2
Rise Time2
Turn–Off Delay Time2
Fall Time2
Continuous Current
Pulsed Current
Diode Forward Voltage1
Reverse Recovery Time
Reverse Recovery Charge
100
24
±100
25
250
20 0.06 0.075
0.11 0.14
5.0 8.0
1400
480
110
35 50
10 20
18 25
13 30
85 120
35 80
75 95
20
80
2.5
150 400
0.5
V
V
nA
µA
A
W
S
pF
nC
ns
A
V
ns
µC
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
1 Pulse test : Pulse Width < 300
m
s ,Duty Cycle < 2%
2 Independent of Operating Temperature
