BSS8402DW
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS
1
2
3
4
5
6
1
2
3
4
5
6
FEATURES
APPLICATIONS
MAXIMUM RATINGS - TOTAL DEVICE
Rating Symbol Value Units
This space-efficient device contains an electrically-isolated complimentary pair
of enhancement-mode MOSFETs (one N-channel and one P-channel). It
comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
portable applications where board space is at a premium.
Low On-Resistance
In compliance with EU RoHS 2002/95/EC directives
Low Gate Threshold Voltage
Fast Switching
Switching Power Supplies
Hand-Held Computers, PDAs
Total Power Dissipation (Note 1)
Operating Junction and Storage Temperature Range
9/15/2005 Page 1 www.panjit.com
200 mW
°C-55 to +150
P
T, T
D
stg
T = 25°C Unless otherwise noted
J
J
SOT- 363
123
654
Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
Complimentary Pairs
MAXIMUM RATINGS N - CHANNEL - Q , 2N7002
Rating Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage R < 1.0Mohm
Gate-Source Voltage - Continuous
Drain Current - Continuous (Note 1)
60 V
V60
V±20
mA115
V
V
V
I
DSS
DGR
GSS
D
T = 25°C Unless otherwise noted
J
1
GS
MAXIMUM RATINGS P - CHANNEL - Q , BSS84
Rating Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage R < 20Kohm
Gate-Source Voltage - Continuous
Drain Current - Continuous (Note 1)
-50 V
V-50
V±20
mA130
V
V
V
I
DSS
DGR
GSS
D
T = 25°C Unless otherwise noted
J
2
GS
THERMAL CHARACTERISTICS
Characteristic Symbol Units
thja
Thermal Resistance, Junction to Ambient (Note 1) 625
Value
R°C/W
QQ
12
MARKING CODE: S82
DS
V = 10V, I = 0.2A
DSGS
V = ±20V, V = 0V
www.panjit.com
9/15/2005 Page 2
Electrical Characteristics - N-CHANNEL - Q , 2N7002
Parameter Symbol Min Units
Drain-Source Breakdown Voltage
T = 25°C Unless otherwise noted
Conditions Typ Max
BVDSS D
I = 10µA, V = 0V
Zero Gate Voltage Drain Curren
t
IDS
S
V = 60V, V = 0
DS
Gate-Body Leakage
60 80 - V
- - 1.0
- - 500 µA
- ±10 nA
-
BSS8402DW
OFF CHARACTERISTICS (Note 2)
IGSS
T =125°C
GS
J
J
J
D
Parameter Symbol Min Units
Gate Threshold Voltage
Conditions Typ Max
VGS(th) DS
V = V , I = 250µA
Forward Transconductance
1.0 1.6 2.5 V
ON CHARACTERISTICS (Note 2)
gFS
GS D
0.08 - - S
Static Drain-Source On-Resistanc
e
RDS(ON)
GS
V = 5V, I = 0.05A - 1.8 4.5
D
Parameter Symbol Min Units
Input Capacitance
Conditions Typ Max
Ciss
Reverse Transfer Capacitance
- - 50 pF
DYNAMIC CHARACTERISTICS
Crss -- 5.0 pF
Output Capacitance Coss
DS
V = 25V,
V = 0V,
f = 1.0MHz
- - 25 pF
GS
Parameter Symbol Min Units
Turn-On Delay Time
Conditions Typ Max
tD(ON) - - 20 ns
SWITCHING CHARACTERISTICS
Turn-Off Delay Time - - 20 ns
tD(OFF)
V =30V, I =0.2A, R =150ohm
R = 25ohm, V = 10V
DD D
GEN GEN
Note 2. Short duration test pulse used to minimize self-heating
GS
T =25°C
L
1
V = 10V, I = 0.5A
GS D- 2.0 7.0 Ohms
0.5 1.65 - A
DS
GS
V = 10V, V = 7.5V
On-State Drain Current ID(ON
)
DS
V = -25V, I = -0.1A
DSGS
V = ±20V, V = 0V
Electrical Characteristics - P-CHANNEL - Q , BSS84
Parameter Symbol Min Units
Drain-Source Breakdown Voltage
T = 25°C Unless otherwise noted
Conditions Typ Max
BVDSS D
I = -250µA, V = 0V
Zero Gate Voltage Drain Curren
t
IDS
S
V = -50V, V = 0V, T =25°C
DS
Gate-Body Leakage
-50 - - V
- - -15
- - -60 µA
- ±10 nA
-
-0.1--
OFF CHARACTERISTICS (Note 3)
IGSS
DS
DS
V = -50V, V = 0V, T =125°C
V = -25V, V = 0V, T =25°C
GS
GS
GS
J
J
J
J
D
Parameter Symbol Min Units
Gate Threshold Voltage
Conditions Typ Max
VGS(th) DS
V = V , I = -1mA
Forward Transconductance
-0.8 1.44 -2.0 V
ON CHARACTERISTICS (Note 3)
gFS
GS D
0.05 - - S
Static Drain-Source On-Resistanc
e
RDS(ON) GS
V = -5V, I = -0.1A - 3.8 10 Ohms
D
Parameter Symbol Min Units
Input Capacitance
Conditions Typ Max
Ciss
Reverse Transfer Capacitance
- - 45 pF
DYNAMIC CHARACTERISTICS
Crss --12pF
Output Capacitance Coss
DS
V = -25V,
V = 0V,
f = 1.0MHz
- - 25 pF
GS
Parameter Symbol Min Units
Turn-On Delay Time
Conditions Typ Max
tD(ON) - 7.5 - ns
SWITCHING CHARACTERISTICS
Turn-Off Delay Time - 25 - ns
tD(OFF)
V = -30V, I = -0.27A,
R = 50ohm, V = -10V
DD D
GEN GS
Note 3. Short duration test pulse used to minimize self-heating
GS
BSS8402DW
2
www.panjit.com
9/15/2005 Page 3
0.8
0.85
0.9
0.95
1
1.05
1.1
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
VGS Threshold Voltage (NORMALIZE
D
ID =250µA
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4
VSD - Source-to-Drain Voltage (V)
IS - Source Current (
A
2
5
o
C
VGS = 0V
0
2
4
6
8
10
246810
VGS - Gate-to-Source Voltage (V)
RDS(ON)
- On-Resistance (Ohms
)
Ids=50mA
Ids=500mA
Typical Characteristics Curves - N-Channel - Q , 2N7002 T = 25°C Unless otherwise noted
J
BSS8402DW
1
0
0.2
0.4
0.6
0.8
1
1.2
0123456
VGS - Gate-to-Source Voltage (V)
ID - Drain Source Current (
VDS =10V
25oC
0
0.2
0.4
0.6
0.8
1
012345
VDS - Drain-to-Source Voltage (V)
ID - Drain-Source Current (A
)
V
GS
= 6V, 7V, 8V, 9V, 10V
3.0V
4.0V
5.0V
0
2
4
6
8
10
00.20.40.60.811.2
ID - Drain Current (A)
RDS(ON)
- On-Resistance (Ohms
)
VGS = 4.5V
VGS=10.0V
Fig. 1. Output Characteristics Fig. 2. Transfer Characteristics
Fig. 6. Sourse-Drain Diode Forward VoltageFig. 5. Threshold Voltage vs. Temperature
Fig. 3. On-Resistance vs. Drain Current Fig. 4. On-Resistance vs. G-S Voltage
www.panjit.com
9/15/2005 Page 4
0.01
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4
-VSD - Source-to-Drain Voltage (V)
-IS - Source Current (A)
25oC
VGS = 0V
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
VGS Threshold Voltage (NORMALIZE
D
ID =250µA
0
2
4
6
8
10
246810
-VGS - Gate-to-Source Voltage (V)
RDS(ON)
- On-Resistance (Ohms
)
Ids =- 50 mA
Ids =- 500 mA
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
-ID - Drain Current (A)
RDS(ON)
- On-Resistance (Ohms
)
V
GS
= 4.5V
VGS =10.0V
0
0.2
0.4
0.6
0.8
1
01234567
-VGS - Gate-to-Source Voltage (V)
-ID
- Drain Source Current (A
)
VDS =10V
25oC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
012345
-VDS - Drain-to-Source Voltage (V)
-ID
- Drain-to-Source Current (A
)
VGS= 6V, 7V, 8V, 9V, 10V
3.0V
4.0V
5.0V
Electrical Characteristic Curves - P-Channel - Q , BSS84 T = 25°C Unless otherwise noted
J
BSS8402DW
2
www.panjit.com
9/15/2005 Page 5
Fig. 1. Output Characteristics Fig. 2. Transfer Characteristics
Fig. 6. Sourse-Drain Diode Forward VoltageFig. 5. Threshold Voltage vs. Temperature
Fig. 3. On-Resistance vs. Drain Current Fig. 4. On-Resistance vs. G-S Voltage
www.panjit.com
9/15/2005 Page 6
BSS8402DW
ORDERING INFORMATION
BSS8402DW T/R7: 7 inch reel, 3K units per reel, Pin 1 towards tape sprocket holes
BSS8402DW T/R7-R: 7 inch reel, 3K units per reel, Pin 1 away from tape sprocket holes
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
BSS8402DW T/R13: 13 inch reel, 10K units per reel, Pin 1 towards tape sprocket holes
BSS8402DW T/R13-R: 13 inch reel, 10K units per reel, Pin 1 away from tape sprocket holes
0.018(0.45)
0.006(0.15)
0.010(0.25)
Unit inch(mm)：
SOT-363
0.054(1.35)
0.045(1.15)
0.087(2.20)
0.074(1.90)
0.030(0.75)
0.021(0.55)
0.056(1.40)
0.047(1.20)
0.012(0.30)
0.005(0.15)
0.040(1.00)
0.031(0.80)
0.044(1.10)
MAX.
0.087(2.20)
0.078(2.00)
0.010(0.25)
0.003(0.08)
SOT-363
0.018
(0.45)
0.020
(0.50)
0.075
(1.90)
0.026
(0.65)
0.026
(0.65)
Unit inch(mm)：