JANTX2N3792 - AEROFLEX

MIL-PRF-19500/379K

19 June 2015

SUPERSEDING

MIL-PRF-19500/379J

2 July 2012

PERFORMANCE SPECIFICATION SHEET

TRANSISTOR, PNP, SILICON, HIGH-POWER,

ENCAPSULATED (THROUGH HOLE), DEVICE TYPES 2N3791 AND 2N3792, QUALITY LEVELS: JAN, JANTX,

JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for power PNP silicon 2N3791 and 2N379 2

transist ors. Four level s of product as surance are provide d for each encapsulated device type as specif ied in

MIL-PRF-19500.

1.2 Package out l ine. See figure 1, (similar to TO-3).

1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.

PT (1)

TA = +25

PT (2)

TC = +100

VCBO VCEO VEBO IB IC TJ and TSTG RθJC

W W V dc V dc V dc A dc A dc °C °C/W

2N3791

5.0

85.7

-60

-7.0

-4.0

-10

-65 to +200

1.1

2N3792

5.0

85.7

-80

-7.0

-4.0

-10

-65 to +200

1.1

(1) Derate linearly 28.57 mW/°C above TA = +25°C.

(2) See figure 2 for temperature-power derating curves.

1.4 Primary electrical chara ct erist ic s. Unless otherwise specified, TC = +25°C.

FE2

(1) h

FE4

(1) V

BE(SAT)1

(1) V

CE(SAT)1

(1)

Cobo

|hfe|

VCE = -2.0 V dc

IC = -3.0 A dc

VCE = -4.0 V dc

IC = -10 A dc

IC = -5.0 A dc

IB = -0.5 A d c

IC = -5.0 A dc

IB = -0.5 A d c

VCB = -10 V dc

IE = 0

f = 1 MHz

VCE = -10 V dc

IC = -0.5 A dc

f = 1 MHz

V dc

Min

5.0

4.0

Max

120

-1.5

-1.0

500

(1) Pulse (see 4.5.1).

AMSC N/A FSC 5961

INCH-POUND

Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online databas e at https://assist.dla.mil/.

The documentation and process conversion

measures necessary to comply with this document

shall be completed by 19 September 2015.

MIL-PRF-19500/379K

* 1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL–PRF–19500, and as specified herein.

See 6.5 for PIN construction example and 6.6 for a list of available PINs.

* 1.5.1 JAN brand and quality level designators.

* 1.5.1.1 Encapsulated devices. The quality level designators for encapsulated devices that are applicable for this

specification sheet from the lowest to the highest level are as follows: the base quality level "JAN" that uses no

modifiers, "JANTX", "JANTXV", and "JANS".

* 1.5.2 Device type. The designation system for the device types of transistors covered by this specification sheet

are as follows.

* 1.5.2.1 First number and first letter symbols. The transistors of this specification sheet use the first number and

letter symbols "2N".

* 1.5.2.2 Second number symbols. The second number symbols for the transistors covered by this specification

sheet are as follows: "3791" and "3792".

* 1.5.3 Lead finish. The lead finishes applicable to this specification sheet are listed on QML–19500.

2. APPLICABLE DOCUMENTS

* 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

2.2 Govern ment document s.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 - Test Methods for Semiconductor Devices.

*(Copies of these documents are available online at http://quicksearch.dla.mil)

2.3 Order of prece den ce. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

MIL-PRF-19500/379K

NOTES:

1. Dimensions are in inches.

2. Millime ters are given for general information only .

3. Termin al 2, base; term ina l 1, emitter; case, collector.

4. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating

plane. When gauge is not used, measurement will be made at the seating plane.

5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm)

convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch

(0.03 mm) concave to .006 inch (0.15 mm) convex overall.

6. Collector shall be electrically connected to the case.

7. LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1.

8. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensio ns (sim ilar t o TO -3).

Dimensions

Ltr

Inches

Millimeters

Notes

Min

Max

Min

Max

.875

22.22

.270

.350

6.86

8.89

.495

.525

12.57

13.34

HR1

.131

.188

3.33

4.78

.060

.135

1.52

3.43

.038

.043

0.97

1.09

.312

.500

7.92

12.70

.050

1.27

MHD

.151

.165

3.84

4.19

MHS

1.177

1.197

29.90

30.40

.420

.440

10.67

11.18

4,5

PS1

.205

.225

5.21

5.72

4,5

.655

.675

16.64

17.15

TO-3

MIL-PRF-19500/379K

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying

activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbrevia tio ns, sy mbols, and def i niti on s used herein shall be as

specified in MIL-PRF-19500.

* 3.4 Interfa ce and phy si cal dim ensi ons . The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and herein. The device package style shall be as follows: TO-3, in accordance with figure 1.

* 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Electr ica l perf or man ce ch aract er is tic s. Unless otherwise specified, the electrical performance characteristics

are as specifi ed in 1.3, 1.4, and table I herein.

3.6 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.7 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Clas sifi cat ion of insp ect io ns. The inspection requirements specified herein are classified as follows:

a. Qualifi cati on ins pec t ion (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II).

* 4.2 Qualifi cation inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Gro up E qualifi cat ion. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

MIL-PRF-19500/379K

* 4.3 Screening.

* 4.3.1 Screening of encapsulated devices (quality levels JANTX, JANTXV, and JANS only). Screening of

encapsulated devices shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The

following measur e me nts sha ll be made in accordance with table I herein. Devices that exceed the limits of ta ble I

herein shall not be acceptable.

Screen

Measurement

JANS level JANTX and JANTXV levels

(1) 3c

Thermal impedance, method 3131 of MIL-STD-750.

(see 4.3.1.2)

Thermal impedance, method 3131 of

MIL-STD-750. (see 4.3.1.2)

9 ICES1 and hFE2 ICES1

11 ICES1 and hFE2

∆ICES1 = 100 percent of initial value

or 5 µA dc, whichever is greater.

∆hFE2 = ±15 percent of initial value.

ICES1 and hFE2;

∆ICES1 = 100 percent of initial value

or 10 µA dc, whichever is greater.

12 See 4.3.1 See 4.3.1

13 ∆ICES1 = 100 percent of initial value

or 1 µA dc, whichever is greater;

∆hFE2 = ±15 percent of initial value;

subgroups 2 and 3 of table I herein.

∆ICES1 = 100 percent of initial value

or 5 µA dc, whichever is greater; ∆hFE2 = ±15

percent of initial value; s ubgroup 2 of table I

herein.

(1) Shall be performed any ti me after temperat ure cy cli ng, scr een 3a; JANTX and JANTXV levels do not need to be

repeated in screening requirements.

4.3.1.1 Power burn-in conditio ns. Power burn-in conditions are as follows: TJ = +187.5°C ±12.5°C;

VCB = -35 ±5 V dc; TA = room ambient as defined in the general requirements of MIL-STD-750.

4.3.1.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where

appropriate). The thermal impedance limit used in screen 3c of 4.3 her ein and table I shall comply with the thermal

impedance graph in figure 3 (less than or equal to the curve value at the same tH time) and shall be less than the

process determined statistical maximum limit as outlined in method 3131.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.

* 4.4.1 Gro up A inspe ctio n. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein.

* 4.4.2 Gro up B inspe ctio n.

* 4.4.2.1 Quality level JANS, table E-VIA of MIL-PRF-19500.

Subgroup Method Conditions

* B3 2037 Test condition D; all int er nal wir es for each dev ice shall be pu lled sep ar at ely .

B4 1037 VCB = -30 V dc; PT = 5 W at TA = +25°C ±3°C, ton = toff = 3 minutes minimum.

No heat sink nor forced air on the device shall be permitted.

B5 1027 VCB = -30 V dc; TA = +125°C ±25°C for 96 hours; PT = adjusted as required by the

chosen TA to give an average lot TJ = +275°C.

B6 3131 See 4.5.2.

MIL-PRF-19500/379K

* 4.4.2.2 Quality level JAN, JANTX and JANTXV, table E-VIb of MIL-PRF-19500.

Subgroup Method Conditions

B3 1027 TJ = +187.5°C ±12.5°C; VCB = -35 V dc ±5 V dc; TA < +100°C.

B5 3131 See 4.5.2.

B6 1032 TA = +200°C.

* 4.4.3 Gro up C inspec tion . Group C inspection shall be conducted in accordance with the conditions specified for

subgroup test ing in table E-VII of MIL-PRF-19500 and as follows. Delta requirements shall be in accordance with the

applicable ste ps of table II herein.

Subgroup Method Conditions

C2 2036 Test condition A; weight = 10 pounds, t = 15 s.

C6 1026 TJ = +187.5°C ±12.5°C; V CB = -35 V dc; TA ≤ +100°C.

* 4.4.4 Gro up E inspe ctio n. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup test ing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Delta requir eme nts sha ll be in

accordance with the applicable steps of table II herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.

4.5.1 Pul se mea sure ment s. Condit ion s for pulse mea sure ment sha ll be as spe cifi ed in MIL-STD-750.

4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method

3131 of MIL-STD-750. The following details shall apply:

a. Collector current magnitude during power application shall be -1.0 A dc minimum.

b. Collector to emitter voltage magnitude shall be -10 V dc minimum.

c. Reference temperature measuring point shall be the case.

d. Reference point temperature shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started.

e. Mounting arrangement shall be with heat sink to header.

f. Maximum limit of RθJC = 1.1.

MIL-PRF-19500/379K

TABLE I. Group A inspection.

Inspecti on 1/

MIL-STD-750

Symbol

Limits

Unit

Method Conditions Min Max

Subgroup 1

Visual and mechanical

examination

2071

Subgroup 2

Thermal impedance 2/

3131

See 4.3.1.2

ZθJX

°C/W

Collector-emitter

breakdown voltage

3011

Bias conditions D, I

= -10 mA dc;

pulsed (see 4.5.1)

(BR)CEO

2N3791

-60

V dc

2N3792

-80

V dc

Emitter-base cutoff

current

3061

Bias condition D; V

= -7 V dc

EBO

-5.0

mA dc

Collector-base cutoff

current

3036

Bias conditions D

CBO

2N3791

VCB = -60 V dc

-20

µA dc

2N3792

= -80 V dc

-20

µA dc

Collector-emitter

cutoff current

3041

Bias condition A; V

= -1.5 V d c

CEX

2N3791

VCE = -60 V dc

-20

µA dc

2N3792

= -80 V dc

-20

µA dc

Collector-emitter

cutoff current

3041

Bias condition C

CES1

2N3791

VCE = -50 V dc

-20

µA dc

2N3792

VCE = -70 V dc

-20

µA dc

Base-emitt er saturated

voltage

3066

Test condition A; I

= -5 A dc;

IB = -0.5 A dc; pulsed (see 4.5.1)

BE(sat)1

-1.5

V dc

Base-emitt er saturated

voltage

3066

Test condition A; I

= -10 A dc;

IB = -2 A dc; pulsed (see 4.5.1)

BE(sat)2

-3.0

V dc

Collector-emitter

saturated voltage

3071

= -5 A dc ; I

= -0.5 A dc;

pulsed (see 4.5.1)

CE(sat)1

-1.0

V dc

Collector-emitter

saturated voltage

3071

IC = -10 A dc; IB = -2 A dc;

pulsed (see 4.5.1) VCE(sat)2

-2.5

V dc

Forward-current

transfer ratio

3076

= -2.0 V dc; I

= -1.0 A d c;

pulsed (see 4.5.1)

FE1

150

See footnote at end of table.

MIL-PRF-19500/379K

TABLE I. Group A inspection - Continued.

Inspecti on 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 2 - Continued

Forward-current

transfer ratio

3076

= -2.0 V dc; I

= -3.0 A d c;

pulsed (see 4.5.1)

FE2

120

Forward-current

transfer ratio

3076

= -2.0 V dc; I

= -5 A dc;

pulsed (see 4.5.1)

FE3

Forward-current

transfer ratio

3076

VCE = -4.0 V dc; IC = -10 A dc;

pulsed (see 4.5.1)

hFE4

Subgroup 3

High temperature

operation:

= +150°C

Collector to emitter

cutoff current

3041

Bias conditions C

ICES2

2N3791

2N3792

= -50 V dc

VCE = -70 V dc

-3.4

mA dc

-3.4

mA dc

Low temperature

operation:

= -55°C

Forward-current

transfer ratio

3076

= -2.0 V dc; I

= -3.0 A d c;

pulsed (see 4.5.1)

FE5

Subgroup 4

Switching param eters :

See figure 4

Pulse delay time

0.2

µs

Pulse r ise time

1.3

µs

Pulse storage time

1.4

µs

Pulse fall time

1.0

µs

Small-signal short-circuit

forward-current transfer

3206

= -10 V dc; I

= -0.5 A dc;

f = 1 kHz hfe

300

Magnitude of small-signal

short-cir cuit, forward-current

transf e r ratio

3306

= -10 V dc; I

= -0.5 A dc;

f = 1 MHz |hfe|

4.0

Open circuit output

capacitance

3236

VCB = -10 V dc; IE = 0; f = 1 MHz Cobo

500

See footnote at end of table.

MIL-PRF-19500/379K

TABLE I. Group A inspect ion - Continued.

Inspecti on 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 5

Safe operati ng area

(continuous dc)

3051

= +25°C; t ≥ 1 s; 1 cycle;

(see fi gure 5)

Test 1

= -15 V dc; I

= -10 A dc

Test 2

= -40 V dc; I

= -3.75 A dc

Test 3

2N3791

VCE = -55 V dc; IC = -0.9 A dc

2N3792

= -65 V dc; I

= -0.9 A dc

Safe operati ng area

(clamped inductive)

3053

Condition C

TA = +25°C; IC = -10 A dc;

VCC = -15 V dc; (see figure 6

and 7)

2N3791

Clamp voltage = -60 V dc

2N3792

Clamp voltage = -80 V dc

Subgroups 6 and 7

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

2/ This test required for the following end-point mea sure me nts only:

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group B, subgroups 3, 4, and 5 (JANS).

Group C, subgroup 2 and 6.

Group E, subgroup 1.

MIL-PRF-19500/379K

TABLE II. Groups B, C, and E delta measurements. 1/ 2/ 3/ 4/

Step

Inspection

MIL-STD-750

Symbol

Limits

Unit

Method Conditions Min Max

Collector-emitter

cutoff current

2N3791

2N3792

3041

Bias condition C

VCE = -50 V dc

VCE = -70 V dc

∆I

CES1

100 percent of initial value

or 1 µA dc; whichever is

greater.

Forward-current

transfer ratio

3076

= -2.0 V dc; I

= -3.0 A d c;

pulsed (see 4.5.1)

∆h

FE2

±25 percent change from

initial value

Collector-emitter

(voltage saturated)

3071

= -5 A dc ; I

= -0.5 A dc;

pulsed (see 4.5.1)

∆V

CE(sat)1

±50 mV dc change from

previously measured value

1/ The delta measurements for appendix E, table E-VIA (JANS) of MIL-PRF-19500 are as follows :

a. Subgroup 4, see table II herein, step 3.

b. Subgroup 5, see table II herein, steps 1, 2, and 3.

2/ The delta measurements for appendix E, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as

follows:

a. Subgroup 3, see table II herein, steps 1, 2, and 3.

b. Subgroup 6, see table II herein, steps 1 and 2.

3/ The delta measur ements for appendix E, table E-VII of MIL-PRF-19500 are sub gr ou p 6, see table II herein,

steps 1, 2, and 3 (JANS); 1 and 2 (JAN, JANTX, and JANTXV).

4/ The delta measurements for appendix E; table E-IX of MIL-PRF-19500 ar e sub grou ps 1 and 2, see table II

herein, all steps.

5/ Devices which exceed the group A limits for this test shall not be shippable but are not considered failures for

the test.

MIL-PRF-19500/379K

TABLE III. Group E inspection (all quality levels) - for qualification and re-qualification only.

Inspection MIL-STD-750 Qualification

Method Conditions

Subgroup 1

45 devices

c = 0

Temperature c ycle

1051

Condition G, 500 cycles.

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 and table II, all steps.

Subgroup 2

45 devices

c = 0

Blocking life

1048

+125°C; V

= 80 percent rated (see 1.3); 1,000 hours.

Electrical measurements

See table I, subgroup 2 and table II, all steps.

Subgroup 4

Sample size

N/A

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 5

Not applicable

Subgroup 8

45 devices

c = 0

Reverse stability

1033

Condition A.

MIL-PRF-19500/379K

NOTES:

1. All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will

intersect the appropriate power/current for the desired maximum TJ allowed.

2. Derate design curve constrained by the maximum junction temperature (TJ ≤ +200°C) and power rating

specified. (See 1.3 herein.)

3. Derate design curve chosen at TJ ≤ +150°C , w here the maximum temperat ur e of electr ic al test is

performed.

4. Derate design curv es cho se n at TJ ≤ +125°C, and +110°C to show power rating where most users want to

limit TJ in their application.

FIGURE 2. Temperature-power derating graphs, TO-3.

MIL-PRF-19500/379K

TC = +25C. RθJC = 1.1°C/W.

FIGURE 3. Transient therm al impedance graph.

Maximum Thermal Impedance

0.01

0.1

0.000001 0.00001 0.0001 0.001 0.01 0.1 110

Time (s)

Theta (C/W)

MIL-PRF-19500/379K

NOTES:

1. The input waveform is supplied by a pulse generator with the following characteristics:

tr ≤ 2.0 ns, tf ≤ 1 µs, 10 µs ≤ PW ≤ 100 µs, ZOUT = 50Ω, duty cycle ≤ 2 percent.

2. Output waveforms are monitored on an oscilloscope with the following characteristics:

tr ≤ 5 ns, Zin ≥ 100 kW, Cin ≤ 12 pF.

3. Test circuit A for td and tr; test circuit B for ts and tf.

FIGURE 4. Pulse respons e test circuits.

MIL-PRF-19500/379K

FIGURE 5. Maximum safe operating graph (dc).

MIL-PRF-19500/379K

FIGURE 6. Safe operating area for switching between saturation and cutoff (clamped inductive load).

MIL-PRF-19500/379K

Procedure:

1. With switch S1 closed, set the specified test conditions.

2. Open S1. Device fails if clamp voltage not reached.

3. Perfor m specif ied end poi nt tests.

4. L = 4 mH, .05W , 20 A.

Q | 100 at 1 kHz.

(Stanford Miller CK-20 or equivalent.)

FIGURE 7. Clamped inductive sweep test circuit.

MIL-PRF-19500/379K

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel

need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or

within the Military Service’s system commands. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Inten ded use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

* 6.2 Acquisit ion requ ir e ment s. Acquisition documents should specify the following:

a. Title, num ber, and date of this specificat io n.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

d. The complete PIN (see 1.2 and 6.5)

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,

at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from DLA

Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online

listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at

https://assist.dla.mil.

6.4 Interchangeability information. MIL-PRF-19500/621 is a TO-254 package version of MIL-PRF-19500/379,

which is a TO-3 package version. The military 2N7369 contains the same die as the military 2N3792. The

MIL-PRF-19500/621 is preferred over the MIL-PRF-19500/379 whenever interchangeability is not a problem. For

new design use 2N7369. The 2N3792 is inactive for new design. Transistor types 2N3789 and 2N3790 were deleted

by MI L-PRF-19500/379A(ER). The following show the replacement types:

Deleted transistors Replaced by

2N3789 2N3791

2N3790 2N3792

MIL-PRF-19500/379K

* 6.5 PIN constr u ctio n ex ample s.

JANTXV 2N 3791

JAN brand and quality level (see 1.5.1)

First number and first letter symbols (see 1.5.2.1)

Second number and symbols (see 1.5.2.2)

6.6 List of PINs.

PINs for devices of

the base quality level

PINs for devices of the

“TX” quality level

PINs for devices of the

“TXV” quality level

PINs for devices of the “S”

quality level

JAN2N3791

JANTX2N3791

JANTXV2N3791

JANS2N3791

JAN2N3792

JANTX2N3792

JANTXV2N3792

JANS2N3792

6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notat ion s . Bidders and contr ac tors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 85 (Project 5961-2015-063)

NASA - NA

DLA - CC

Review activities:

Army - AR, AV, MI, SM

Navy - AS, MC

Air Force - 19, 99

NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at https://assist.dla.mil/.