BT138-800E,127\"\" - NXP SEMICONDUCTORS

IMPORTANT NOTICE

10 December 2015

1. Global joint venture starts operations as WeEn Semiconductors

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BT138-800E

4Q Triac

30 August 2013 Product data sheet

Scan or click this QR code to view the latest information for this product

1. General description

Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic

package intended for use in general purpose bidirectional switching and phase control

applications. This sensitive gate "series E" triac is intended to be interfaced directly to

microcontrollers, logic integrated circuits and other low power gate trigger circuits.

2. Features and benefits

•Direct triggering from low power drivers and logic ICs

•High blocking voltage capability

•Planar passivated for voltage ruggedness and reliability

•Sensitive gate

•Triggering in all four quadrants

3. Applications

•General purpose motor control

•General purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-

state voltage

- - 800 V

ITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

- - 95 A

Tjjunction temperature - - 125 °C

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1;

Fig. 2; Fig. 3

- - 12 A

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

- 2.5 10 mAIGT gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

- 4 10 mA

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- 5 10 mA

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

- 11 25 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 536 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

- 150 - V/µs

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1

2 T2 main terminal 2

3 G gate

mb T2 mounting base; main

terminal 2

1 2

TO-220AB (SOT78)

sym051

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BT138-800E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

BT138-800E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 3 / 13

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage - 800 V

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1;

Fig. 2; Fig. 3

- 12 A

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

- 95 AITSM non-repetitive peak on-state

current

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

- 105 A

I2t I2t for fusing tp = 10 ms; sine-wave pulse - 45 A2s

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G+

- 50 A/µs

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G-

- 50 A/µs

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2- G-

- 50 A/µs

dIT/dt rate of rise of on-state current

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2- G+

- 10 A/µs

IGM peak gate current - 2 A

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 4 / 13

Tmb (°C)

-50 1501000 50

003aaj938

IT(RMS)

(A)

99 °C

Fig. 1. RMS on-state current as a function of mounting

base temperature; maximum values

surge duration (s)

10-2 10110-1

003aaj940

IT(RMS)

(A)

f = 50 Hz; Tmb = 99 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

003aaj942

Ptot

(W)

IT(RMS) (A)

0 15126 93

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

Tmb(max)

(°C)

120

α = 180°

125

119

113

107

101

α = conduction angle

a = form factor = IT(RMS) / IT(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 5 / 13

003aaj944

100

1 10 102103

number of cycles (n)

ITSM

(A)

ITSM

Tj(init)

C max

1/f

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

003aaj945

102

103

10-5 10-4 10-3 10-2 10-1

tp (s)

ITSM

(A)

TSM

j(init)

= 25 °C max

(1)

(2)

tp ≤ 20 ms

(1) dIT/dt limit

(2) T2- G+ quadrant limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 6 / 13

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

full cycle; Fig. 6 - - 1.5 K/WRth(j-mb) thermal resistance

from junction to

mounting base half cycle; Fig. 6 - - 2 K/W

Rth(j-a) thermal resistance

from junction to

ambient

in free air - 60 - K/W

003aaj343

10-1

10-2

Zth(j-mb)

(K/W)

10-3

tp (s)

10-5 1 1010-1

10-2

10-4 10-3

(1)

(2)

(1) Unidirectional (half cycle)

(2) Bidirectional (full cycle)

Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 7 / 13

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

- 2.5 10 mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

- 4 10 mA

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- 5 10 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

- 11 25 mA

VD = 12 V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 8

- - 30 mA

VD = 12 V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 8

- - 40 mA

VD = 12 V; IG = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 8

- - 30 mA

ILlatching current

VD = 12 V; IG = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 8

- - 40 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 30 mA

VTon-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.4 1.65 V

VD = 12 V; IT = 0.1 A; Tj = 25 °C;

Fig. 11

- 0.7 1 VVGT gate trigger voltage

VD = 400 V; IT = 0.1 A; Tj = 125 °C;

Fig. 11

0.25 0.4 - V

IDoff-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 536 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

- 150 - V/µs

tgt gate-controlled turn-on

time

ITM = 16 A; VD = 800 V; IG = 0.1 A; dIG/

dt = 5 A/µs

- 2 - µs

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 8 / 13

Tj (°C)

-50 1501000 50

003aaj946

IGT

IGT(25°C) (1)

(2)

(3)

(4)

(1)

(2)

(3)

(4)

(1) T2- G+

(2) T2- G-

(3) T2+ G-

(4) T2+ G+

Fig. 7. Normalized gate trigger current as a function of

junction temperature

Tj (°C)

-50 1501000 50

003aaj947

IL(25°C)

Fig. 8. Normalized latching current as a function of

junction temperature

Tj (°C)

-50 1501000 50

003aaj948

IH(25°C)

Fig. 9. Normalized holding current as a function of

junction temperature

0 1 2

VT(V)

(A)

(

)

(

)

0.5 1.5 2.5

003aaj949

(

)

Vo = 1.175 V; Rs = 0.0316 Ω

(1) Tj = 125 °C; typical values

(2) Tj = 125 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig. 10. On-state current as a function of on-state

voltage

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 9 / 13

Tj (°C)

-50 1501000 50

003aaj950

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

Fig. 11. Normalized gate trigger voltage as a function of junction temperature

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 10 / 13

10. Package outline

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT78

08-04-23

08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm 4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.6

1.0

c D

1.3

1.0

b2(2) D1E e

2.54

L L1(1) L2(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

1 2 3

L1(1)

b1(2)

(3×)

b2(2)

(2×)

e e

b(3×)

L2(1)

mounting

base

Fig. 12. Package outline TO-220AB (SOT78)

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 11 / 13

11. Legal information

11.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

11.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

11.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, NXP Semiconductors does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their

applications and products using NXP Semiconductors products, and NXP

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the NXP Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 12 / 13

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor

tested in accordance with automotive testing or application requirements.

NXP Semiconductors accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without NXP Semiconductors’ warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

11.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 30 August 2013 13 / 13

12. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information .............................................2

7 Limiting values .......................................................3

8 Thermal characteristics .........................................6

9 Characteristics .......................................................7

10 Package outline ................................................... 10

11 Legal information .................................................11

11.1 Data sheet status ............................................... 11

11.2 Definitions ...........................................................11

11.3 Disclaimers ......................................................... 11

11.4 Trademarks ........................................................ 12

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 30 August 2013