BSP62,115 - NXP - Pdf.Support

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 29 2001 May 31

DISCRETE SEMICONDUCTORS

BSP60; BSP61; BSP62

PNP Darlington transistors

handbook, halfpage

M3D087

2001 May 31 2

NXP Semiconductors Product data sheet

PNP Darlington transistors BSP60; BSP61; BSP62

FEATURES

•High current (max. 0.5 A)

•Low voltage (max. 80 V)

•Integrated diode and resis tor .

APPLICATIONS

•Industrial switching applications such as:

– Print hammer

– Solenoid

– Relay and lamp drivers.

DESCRIPTION

PNP Darlington transisto r in a SOT223 plastic pack age.

NPN complements: BSP50, BSP51 and BSP52.

PINNING

PIN DESCRIPTION

1base

2, 4 collector

3emitter

Fig.1 Simplified outline (SOT223) and symbol.

123

MAM266

Top view

2, 4

LIMITING VALUES

In accordance with th e Absolute Ma ximum Ratin g System (IEC 60134).

Note

1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated

Handbook”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter

BSP60 − −60 V

BSP61 − −80 V

BSP62 − −90 V

VCES collector-emitter voltage VBE = 0

BSP60 − −45 V

BSP61 − −60 V

BSP62 − −80 V

VEBO emitter-base vo ltage open collector − −5 V

ICcollector current (DC) − −1 A

ICM peak collector current − −2 A

IBbase current (DC) − −100 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.25 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2001 May 31 3

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BSP60; BSP61; BSP62

THERMAL CHARACTE RISTICS

Note

1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 98 K/W

Rth j-s thermal resistance from junction to solder point 17 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES collector cut-off current

BSP60 VBE = 0; VCE = −45 V −−−50 nA

BSP61 VBE = 0; VCE = −60 V −−−50 nA

BSP62 VBE = 0; VCE = −80 V −−−50 nA

IEBO emitter cut-off current IC = 0; VEB = −4 V −−−50 nA

hFE DC current gain VCE = −10 V; note 1; see Fig.2

IC = −150 mA 1 000 − −

IC = −500 mA 2 000 − −

VCEsat collector-emitter saturation

voltage IC = −500 mA; IB = −0.5 mA −−−1.3 V

IC = −500 mA; IB = −0.5 mA;

Tj = 150 °C−−−1.3 V

VBEsat base-emitt er saturation voltage IC = −500 mA; IB = −0.5 mA −−−1.9 V

fTtransition freque ncy IC = −500 mA; VCE = −5 V;

f = 100 MHz −200 −MHz

Switching times (between 10% and 90% levels); see Fig.3

ton turn-on time ICon = −500 mA; IBon = −0.5 mA;

IBoff = 0.5 mA −400 −ns

toff turn-off time −1 500 −ns

2001 May 31 4

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BSP60; BSP61; BSP62

Fig.2 DC current gain; typical values.

handbook, full pagewidth

6000

2000

1000

3000

4000

5000

MGD839

−10

−1

−1−10 −10

−10

hFE

IC (mA)

VCE = −10 V.

Fig.3 Test circuit for switching times.

handbook, full pagewidth

DUT

MGD624

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

Vi = −10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns.

R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.

VBB = 1.8 V; VCC = −10.7 V.

Oscilloscope: input impedance Zi = 50 Ω.

2001 May 31 5

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BSP60; BSP61; BSP62

PACKAGE OUTLINE

UNIT A1bpcDEe1HELpQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22

2001 May 31 6

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BSP60; BSP61; BSP62

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or completing a design.

2. The product s tatus of device(s) described in this document may ha ve changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reas onably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other co nditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betw een information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

implication of any license under any copyrights, patents or

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Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this document does not form p art of any quotation or co nt ra ct, is believed to be accurate a nd reliable and may be change d

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands 613514/05/pp7 Date of release: 2001 May 31 Document orde r number: 9397 750 07906