QS043-402-2/5 94 19 8 9 10 11 12 13 5 3 6 18 19 7 4 13 18.5 18.5 18.5 14 LABEL PMB150E6C 5 6 7 8 9 10 11 12 8.01 4x O2.10 110.00 121.50 118.11 PMB150E6 ollector-mitter oltage ate-mitter oltage 12-fasten tab #110 LABEL 119.60 13.00 7.00 11 12 3 4 20.50 18.5 4.5 10 4.5 10 4.5 10 4.5 10 4.5 10 4.5 25.5 15 7 8 9 10 15 16 21 3.81 15.24 7 17.5 17 5 6 17 14 8 34 3 4 16 17 18 20 1 2 13 19 14 15 61.50 58.42 50.00 40.20 19.05 3.81 CL 2 74 4 21 20 1 86 18 19 PMB150E6 1 2 99.00 94.50 4x 19.05= 76.20 CL 12.62 3.81 19.05 4x O 5.50 19.5 7 14 15 19.5 6 7-M4 16 17 17.5 10 11 12 13 39.00 57.50 2 8 9 5 3 4-O5.5 15.50 17.00 1 Dimension:mm 80 12.62 PMB150E6C ollector ower issipation unction emperature ange torage emperature ange , ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal PMB150E6 . .. PDMB150E6 . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 600V, = 0V . = 20V,= 0V . ollector-mitter aturation oltage = 150A,= 15V . . ate-mitter hreshold oltage = 5V,= 150mA . . nput apacitance = 10V,= 0V,= 1MH 7,500 witching ime = = = = . . . . . . . . ise urn-on all urn-off ime ime ime ime orward urrent 300V 2.0 5.1 15V eak orward oltage everse ecovery ime . . . = 150A,= 0V . . = 150A,= -10V i/t= 300A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc 00 QS043-402-3/5 Fig.1- Output Characteristics (Typical) Fig.2- Output Characteristics (Typical) T C=25C 300 VGE=20V VGE=20V 12V 15V 250 T C=125C 300 12V 15V 250 Collector Current I C (A) Collector Current I C (A) 11V 200 150 10V 100 9V 50 11V 200 150 10V 100 9V 50 8V 8V 0 0 1 2 3 4 0 5 0 1 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage V CE (V) 8 6 4 2 4 8 12 16 300A IC=60A 14 150A 12 10 8 6 4 2 0 20 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 350 250 10 VCE =300V 200 8 200V 150 6 100V 100 4 50 2 100 200 300 400 500 0 600 Gate to Emitter Voltage VGE (V) 12 0 VGE=0V f=1MHZ T C=25C 14 300 0 100000 16 RL =2.0( TC=25C 30000 Capacitance C (pF) Collector to Emitter Voltage V CE (V) 10 400 Collector to Emitter Voltage V CE (V) 300A 150A 0 5 T C=125C 16 12 0 4 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C 16 IC=60A 3 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 14 2 10000 Cies 3000 Coes 1000 Cres 300 100 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) 00 QS043-402-4/5 Fig.7- Collector Current vs. Switching Time (Typical) 1 10 VCC=300V RG=5.1 ( VGE=15V T C=25C Resistive Load tOFF 0.6 tf 0.4 tON 0.2 2 1 0.5 toff 0.2 ton tr(V CE) tf 0.1 0.05 tr(VCE) 0 VCC=300V IC=150A VGE=15V T C=25C Resistive Load 5 Switching Time t (s) Switching Time t (s) 0.8 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 0 50 100 150 200 0.02 250 3 10 Collector Current IC (A) Fig.10- Series Gate Impedance vs. Switching Time 10 VCC=300V RG=5.1( VGE=15V T C=125C Inductive Load tOFF tON tf 0.1 tr(Ic) VCC=300V IC=150A VGE=15V T C=125C Inductive Load 5 Switching Time t (s) Switching Time t (s) 1 100 Series Gate Impedance RG (( ) Fig.9- Collector Current vs. Switching Time 10 30 0.01 2 1 0.5 toff 0.2 ton 0.1 tf 0.05 tr(IC ) 0.001 0 50 100 150 200 0.02 250 3 10 Collector Current IC (A) Fig.11- Collector Current vs. Switching Loss Fig.12- Series Gate Impedance vs. Switching Loss VCC=300V RG=5.1( VGE=15V T C=125C Inductive Load 12 EOFF 8 EON ERR 4 0 50 100 150 200 250 Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 100 300 16 0 30 Series Gate Impedance RG (( ) VCC=300V IC=150A VGE=15V T C=125C Inductive Load 100 EON 30 EOFF 10 ERR 3 1 3 10 30 100 Series Gate Impedance RG (( ) Collector Current IC (A) 00 QS043-402-5/5 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25C Fig.14- Reverse Recovery Characteristics (Typical) 1000 200 150 100 50 1 2 3 500 trr 200 100 50 10 4 IRrM 20 0 150 300 Forward Voltage VF (V) 450 600 750 900 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 1000 RG=5.1( , VGE=15V, T C<125C 500 200 Collector Current I C (A) 0 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 3 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) 250 0 IF=150A T C=25C T C=125C T C=125C Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 300 1 FRD 3x10 IGBT -1 1x10 -1 3x10 -2 1x10 -2 T C=25C 3x10 -3 1 Shot Pulse 1x10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) 00