
DSA240X200NA
preliminary
V = V
Symbol Definition
Ratings
typ. max.
I
R
I
V
F
1.00
R0.4 K/
R
min.
120
V
RSM
1.5T = 25°C
VJ
T = °C
VJ
m
15V = V
R
T = 25°C
VJ
I = A
F
T = °C
C
95
P
tot
310
T = 25°C
C
RK/
120
200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
1.26
T = 25°C
VJ
125
V
F0
0.54T = °C
VJ
150
r
F
2.5 m
0.87T = °C
VJ
I = A
F
120
1.17
I = A
F
240
I = A
F
240
threshold voltage
slope resistance for power loss calculation only
m
125
V
RRM
200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
902
unction capacitance V = V24 T = 25°Cf = 1 MHz
RVJ
p
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
150
1.60 k
200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
200
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
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