PD - 95196A IRF7328PbF HEXFET(R) Power MOSFET lyyTrench Technology lyyUltra Low On-Resistance ly Dual P-Channel MOSFET ly Available in Tape & Reel ly Lead-Free VDSS -30V RDS(on) max ID 21m@VGS = -10V -8.0A 32m@VGS = -4.5V -6.8A Description New trench HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -30 -8.0 -6.4 -32 2.0 1.3 16 20 -55 to + 150 V W W mW/C V C Max. Units 62.5 C/W A Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 12/03/10 IRF7328PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- -1.0 12 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.018 17 26.8 --- --- --- --- --- --- 52 9.8 8.3 13 15 198 98 2675 409 262 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 21 VGS = -10V, ID = -8.0A m 32 VGS = -4.5V, ID = -6.8A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -8.0A -15 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 78 ID = -8.0A --- nC VDS = -15V --- VGS = -10V 20 VDD = -15V, VGS = -10.0V 23 ID = -1.0A ns 297 RG = 6.0 147 RD = 15 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -2.0 -32 --- --- --- --- 37 36 -1.2 56 54 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 10sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7328PbF 100 VGS TOP -10.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0V BOTTOM -2.7V 10 1 -2.7V 10 -2.7V 1 0.1 0.1 1 10 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.1 VGS -10.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 0.1 100 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 150 C TJ = 25 C 1 V DS= -15V 20s PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 10 1 -VDS, Drain-to-Source Voltage (V) 6.0 2.0 ID = -8.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7328PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 3000 Ciss 2000 1000 Coss Crss 0 1 10 14 -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 4000 ID = -8A V DS=-24V V DS=-15V 12 10 8 6 4 2 0 100 -VDS , Drain-to-Source Voltage (V) 0 30 40 50 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 20 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 TJ = 25 C 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Fig 7. Typical Source-Drain Diode Forward Voltage 100us 10 1ms TC = 25 C TJ = 150 C Single Pulse V GS = 0 V -VSD ,Source-to-Drain Voltage (V) 4 10 1.6 1 0.1 10ms 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7328PbF 10.0 VDS VGS -ID , Drain Current (A) 8.0 RD D.U.T. RG - + VDD 6.0 VGS Pulse Width 1 s Duty Factor 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 TTCA , Case Temperature ( C) 150 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 10 0.10 PDM 0.05 0.02 0.01 1 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJA + TA 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7328PbF RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance) 0.060 0.050 0.040 ID = -8.0A 0.030 0.020 0.010 0.000 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.100 0.075 0.050 VGS = -4.5V VGS = -10V 0.025 0.000 0 10 30 40 50 60 70 -ID , Drain Current ( A ) -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 20 Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG 10 V QGS QGD 12V .2F .3F D.U.T. +VDS VGS -3mA VG IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform 6 Fig 14b. Gate Charge Test Circuit www.irf.com IRF7328PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D 5 A 8 6 7 6 5 H 1 2 3 0.25 [.010] 4 A MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 6X e e1 8X b A1 MAX .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 0.25 [.010] MILLIMET ERS MIN A E INCHES DIM B 0.10 [.004] y 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 8X 0.72 [.028] 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGTH OF LEAD FOR S OLDERING T O A SUBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER www.irf.com 7 IRF7328PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/2010 8 www.irf.com