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DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 12
DISCRETE SEMICONDUCTORS
PMBT3904
NPN switching transistor
2004 Jan 12 2
NXP Semiconductors Product data sheet
NPN switching transistor PMBT3904
FEATURES
•Collector current capability IC = 200 mA
•Collector-emitter voltage VCEO = 40 V.
APPLICATIONS
•General switching and amp lification .
DESCRIPTION
NPN switching tran sistor in a SOT23 plastic package.
PNP complement: PMBT3906.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE(1)
PMBT3904 *1A
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 40 V
ICcollector current (DC) 200 mA
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23 ) and symbo l .
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
PMBT3904 −plastic surface mounted pa ck age; 3 leads SOT23
2004 Jan 12 3
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT3904
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter −60 V
VCEO collector-emitter voltage open base −40 V
VEBO emitter-base voltage open collector −6 V
ICcollector current (DC) −200 mA
ICM peak collector current −200 mA
IBM peak base current −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 30 V −50 nA
IEBO emitter cut-off current IC = 0; VEB = 6 V −50 nA
hFE DC current gain VCE = 1 V; see Fig.2; note 1
IC = 0.1 mA 60 −
IC = 1 mA 80 −
IC = 10 mA 100 300
IC = 50 mA 60 −
IC = 100 mA 30 −
VCEsat collector-emitter saturation
voltage IC = 10 mA; IB = 1 mA −200 mV
IC = 50 mA; IB = 5 mA −300 mV
VBEsat base-emitt er saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV
IC = 50 mA; IB = 5 mA −950 mV
Cccollector capacitance IE = Ie = 0; VCB = 5 V; f = 1 MHz −4pF
Ceemitter cap a citance IC = Ic = 0; VBE = 500 mV;
f = 1 MHz −8pF
2004 Jan 12 4
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT3904
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
fTtransition freque ncy IC = 10 mA; VCE = 20 V;
f = 100 MHz 300 −MHz
Fnoise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz −5dB
Switching times (between 10% and 90% levels); see Fig.3
tddelay time ICon = 10 mA; IBon = 1 mA;
IBoff = −1 mA −35 ns
trrise time −35 ns
tsstorage time −200 ns
tffall time −50 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
handbook, halfpage
MGU821
hFE
100
0
200
400
300
500
IC (mA)
10−111010
2103
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3 Collector current as a function of
collector-emitter voltag e.
(1) IB = 5.5 mA.
(2) IB = 5 mA.
(3) IB = 4.5 mA.
(4) IB = 3.5 mA.
(5) IB = 3 mA.
(6) IB = 2.5 mA.
(7) IB = 2 mA.
(8) IB = 1.5 mA.
(9) IB = 1 mA.
(10) IB = 0.5 mA.
handbook, halfpage
IC
(mA)
062810
VCE (V)
4
0
250
150
200
50
100
MGU822
(1) (2) (3) (4) (5) (6) (7)
(8)
(9)
(10)
Tamb = 25 °C.
2004 Jan 12 5
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT3904
handbook, halfpage
MGU823
VBE
(mV)
400
200
600
1000
800
1200
IC (mA)
10−111010
2103
(1)
(2)
(3)
Fig.4 Base-emitte r v oltage as a function of
collector current.
VCE = 1 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
MGU824
VBEsat
(mV)
600
1000
400
200
800
1200
IC (mA)
10−111010
2103
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
MGU825
103
VCEsat
(mV)
102
10
IC (mA)
10−1110102103
(1)
(2)
(3)
Fig.6 Collector-emitter satur ation voltage as a
function of collector current.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
2004 Jan 12 6
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT3904
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Fig.7 Test circuit for switching times.
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = −1.9 V; VCC = 3 V.
Oscilloscope: input impedance Zi = 50 Ω.
2004 Jan 12 7
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT3904
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 12 8
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT3904
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betw een information
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No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, c onveyance or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands R75/04/pp9 Date of releas e : 2004 Jan 12 Document order number: 9397 750 12461
