MMBT918
NPN VHF/UHF
Transistors
Features
• Designed for VHF/UHF Amplifier applications.
• Marking : M3B
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 15 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 3.0 V
ICCollector Current-Continuous 50 A
P
CPower dissipation (1) 225 W
TJJunction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=3.0mAdc, I
B=0)
15 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=1.0uAdc, I
E=0)
30 --- Vdc
V(BR)EBO Collector-Emitter Breakdown Voltage
(I
E=10uAdc, IC=0)
3.0 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=15Vdc,IE=0)
--- 50 nAdc
ON CHARACTERISTICS
hFE DC Current Gain
(I
C=3.0mAdc, VCE=1.0Vdc)
20 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=10mAdc, I
B=1.0mAdc)
--- 0.4 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=10mAdc, IB=1.0mAdc)
--- 1.0 Vdc
SMALL SIGNAL CHARACTERISTICS
fTCurrent-Gain-Bandwidth Product
(VCE=10V, f=100MHz, IC=4.0mA)
600 --- MHz
Cobo Output Capacitance
(VCB=10V, f=1.0MHz, IE=0)
--- 1.7 pF
Cibo Input Capacitance
(VEB=0.5V, f=1.0MHz, IC=0)
--- 2.0 pF
NF Noise Figue
(I
C=1.0mAdc, VCE=6.0Vdc,
Rs=50 OHMS, f=60MHz)
--- 6.0 dB
Note: 1. FR-5=1.0 X 0.75 X 0.062 in.
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MI N MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
B
C
D
EF
GH
2.000
mm
.800
.035
.900
.950
.037
.950
Revision: 4 2008/01/01
omponents
20736 Marilla Street Chatsworth
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MCC TM
Micro Commercial Components
E
B
C
www.mccsemi.com
2 of 2
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1