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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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©2011 Fairchild Semiconductor Corporation RHRD660S9A_F085 Rev.C2
RHRD660S9A_F085
6A, 600V Hyperfast Diodes
The RHRD660S9A_F085 is hyperfast diodes with
soft recovery characteristics (trr < 30ns). It has half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Its low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49057.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-252
Ordering Information
PART NUMBER PACKAGE BRAND
RHRD660S9A_F085 TO-252 RHR660
K
AANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RHRD660S9A_F085 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 152oC)
6A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz)
12 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
60 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD50 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 10 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-55 to 175 oC
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL300 oC
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG 260 oC
Data Sheet May 2013
• Qualified to AEC Q101
• RoHS Compliant
©2011 Fairchild Semiconductor Corporation RHRD660S9A_F085 Rev. C2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
F
= 6A - - 2.1 V
I
F
= 6A, T
C
= 150
o
C - - 1.7 V
I
R
V
R
= 600V - - 100
µ
A
V
R
= 600V, T
C
= 150
o
C - - 500
µ
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
µ
s- - 30 ns
I
F
= 6A, dI
F
/dt = 200A/
µ
s- - 35 ns
t
a
I
F
= 6A, dI
F
/dt = 200A/
µ
s - 16 - ns
t
b
I
F
= 6A, dI
F
/dt = 200A/
µ
s - 8.5 - ns
Q
RR
I
F
= 6A, dI
F
/dt = 200A/
µ
s - 45 - nC
C
J
V
R
= 10V, I
F
= 0A - 20 - pF
R
θ
JC
--3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE
VF, FORWARD VOLTAGE (V)
1
30
0.5
10
0 0.5 2.5121.5
IF, FORWARD CURRENT (A)
3
25oC
175oC100oC
0 600400300200
100
0.01
0.1
1
10
1000
100 500
100
o
C
175
o
C
25
o
C
V
R
, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
RHRD660S9A_F085
©2011 Fairchild Semiconductor Corporation RHRD660S9A_F085 Rev. C2
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
IF, FORWARD CURRENT (A)
0
20
30
25
tb
15 ta
10
t, RECOVERY TIMES (ns)
5
160.5
trr
TC = 25oC, dIF/dt = 200A/µs
ta
trr
tb
IF, FORWARD CURRENT (A)
0
50
40
30
20
t, RECOVERY TIMES (ns)
10
160.5
TC = 100oC, dIF/dt = 200A/µs
tb
ta
trr
IF, FORWARD CURRENT (A)
0
60
75
45
t, RECOVERY TIMES (ns)
30
15
160.5
TC = 175oC, dIF/dt = 200A/µs
5
1
0
155 160 170150 175165
2
3
4
DC
TC, CASE TEMPERATURE (oC)
SQ. WAVE
IF(AV), AVERAGE FORWARD CURRENT (A)
6
140 145
VR, REVERSE VOLTAGE (V)
20
10
0
40
0 50 100 150 200
CJ, JUNCTION CAPACITANCE (pF)
50
30
RHRD660S9A_F085
RHRD660S9A_F085
©2011 Fairchild Semiconductor Corporation RHRD660S9A_F085 Rev.C2
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1A
L = 20mH
IV
t0t1t2
IL
VAVL
t
IL
RHRD660S9A_F085
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Definition of Terms
AccuPower™
Auto-SPM™
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BitSiC®
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®
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SuperSOT™-3
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SupreMOS®
SyncFET™
Sync-Lock™
®*
The Power Franchise®
The Right Technology for Your Success™
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC®
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
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