ITT SEMICOND/ INTERMETALL b1E D LL4151 4b8e711 OO03L56b O40 mmosyz Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. identical electrically to standard JEDEC 1N4151 These diodes are delivered taped. Details see Taping. Absolute Maximum Ratings 3.52044 Cathode Mark | Glass case MiniMELF Weight approx. 0.05 g Dimensions in mm Symbol Value Unit Reverse Voltage Vr 50 Vv Peak Reverse Voltage Vam 75 Vv Rectified Current (Average) Ip 1501) mA Half Wave Rectification with Resist. Load at Tamp = 25 C and f= 50 Hz Surge Forward Current at t<1s and Tj = 25C Irom 500 mA Power Dissipation at Tamp = 25 C Prot 5007) mW Junction Temperature T; 175 C Storage Temperature Range Ts ~65 to +175 C 1) Valid provided that electrodes are kept at ambient temperature. 80ITT SEMICOND/ INTERMETALL 61E D MM 4682711 0003157 Ta? MISTI Characteristics at T, = 25C Symbol Min. Typ. Max. Unit Forward Voltage Ve - - 1 Vv at lp = 50mA Leakage Current at Vp = 50 V In - - 50 nA at Va = 50 V, T, = 150C lp - - 50 BA Reverse Breakdown Voltage Viera 75 - - Vv tested with 5 wA Pulses Capacitance Crot - - 2 pF atVe =V,a=0 Reverse Recovery Time from Ir = 10 mA through I; = 10 mA to In = 1 mA tr ~ - 4 ns from Ir = 10 mA to lp = 1 MA, Ve = 6 V, Ri = 10020 t, - - 2 ns Thermal Resistance Rina ~ _ 0.35 K/mwWw Junction to Ambient Air Rectification Efficiency nv 0.45 - - - at f = 100 MHz, Var =2V ') Valid provided that electrodes are kept at ambient temperature. > | son | Var 22 mo ['s % Q TF | ' H T | 6 Rectification Efficiency Measurement Circuit 81ITT SEMICOND/ INTERMETALL b1E D LL4151 4682711 0003158 913 MISI Forward characteristics mA LL4151 103 i 102 7, =100C T= 25C | 10 107 Dynamic forward resistance versus forward current 8 LL4151 7, = 25C f = 1kH2 102 107! 1 10 102 mA F Admissible power dissipation versus ambient temperature Valid provided that electrodes are kept at ambient temperature mw LL4151 1000 : | 900 Prot 800 700 600 | 500 NX 400 300 200 \ 100 N\ 0 100 200C mb Relative capacitance versus reverse voltage LL4151 u T,= 25C ColVa) | || f= 1MHz Crot (OV) 1,0 N hh 0,9 [| 08 0,7 4 Q 2 4 6 8 10VITT SEMICOND/ INTERMETALL 626 D MM 4bSe?h) OO03459 aST mist LL4151 Leakage current versus junction temperature nA LL4151 0 100 200 C Admissible repetitive peak forward current versus pulse duration Valtd provided that electrodes are kept at ambient temperature LL4151 B> oo V=ty/T T= fp a w TERM , 10 05 2 s 104 2 s 0? 2 s 102% 5 107 2 5 1 2 s Ws 83