E T E L O S B O BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) BD243 45 BD243A 60 BD243B 80 BD243C 100 TYP MAX V VCE = 55 V VBE = 0 BD243 0.4 Collector-emitter VCE = 70 V VBE = 0 BD243A 0.4 cut-off current VCE = 90 V VBE = 0 BD243B 0.4 VCE = 115 V VBE = 0 BD243C 0.4 Collector cut-off VCE = 30 V IB = 0 BD243/243A 0.7 current VCE = 60 V IB = 0 BD243B/243C 0.7 VEB = 5V IC = 0 Forward current VCE = 4V IC = 0.3 A transfer ratio VCE = 4V IC = 3A IB = 1A IC = 6A VCE = 4V IC = 6A Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio UNIT mA mA 1 mA (see Notes 5 and 6) 1.5 V (see Notes 5 and 6) 2 V 30 (see Notes 5 and 6) 15 E T E L O S B O VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 1.92 C/W RJA Junction to free air thermal resistance 62.5 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn-on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A toff Turn-off time VBE(off) = -3.7 V RL = 20 tp = 20 s, dc 2% 0.3 s 1 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED NOVEMBER 2012 Specifications are subject to change without notice. BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCS633AH hFE - DC Current Gain VCE = 4 V TC = 25C tp = 300 s, duty cycle < 2% 100 10 TCS633AE 10 VCE(sat) - Collector-Emitter Saturation Voltage - V 1000 IC = 300 mA IC = 1 A IC = 3 A IC = 6 A 1*0 0*1 E T E L O S B O 1*0 0*1 1*0 0*01 0*001 10 IC - Collector Current - A 0*01 0*1 1*0 10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1*2 TCS633AF VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25C 1*1 1*0 0*9 0*8 0*7 0*6 0*1 1*0 10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED NOVEMBER 2012 Specifications are subject to change without notice. 3 BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS633AD tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1*0 0*1 BD243 BD243A BD243B BD243C E T E L O S B O 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JUNE 1973 - REVISED NOVEMBER 2012 Specifications are subject to change without notice.