MFE823 (SILICON) SILICON P-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode (Type C) MOS Field-Effect Transistors designed for use in smoke detector circuits. @ Low Gate Reverse Current igss = 1.0 pAde (Max) @ Vgs = 10 Vde High Sensitivity Yfs = 1.0 mmho (Min) @ Vpg = 10 Vde P-CHANNEL MOS FIELD-EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol! Value Unit Drain-Source Voltage Vos 25 Vde Gate-Source Voltage Vos +10 Vde Drain Current 'p 30 mAdc Total Power Dissipation @ Ta = 25C Pp 300 mw Derate above 25C 1.71 mw ic Operating and Storage Junction Ty. Tstg -65 to +200 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction Resa 584 Scw to Ambient Thermal Resistance, Junction Resc 250 cw to Case HANDLING PRECAUTIONS: MOS field-effect transistors have extremely high input resistance. They can be damaged by the accumulation of excess static charge. Avoid possible damage to the devices while handling, testing, or in actual operation, by foltowing the procedures outlined below: 1. To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when being tested or used. Avoid unnecessary handling. Pick up devices by the case instead of the leads. Do not insert or remove devices from circuits with the power on because transient voltages may cause permanent damage to the devices. 2. 3. go Tm SEATING PLANE STYLE 11: PIN 1. DRAIN 2. GATE 43. SOURCE, SUBSTRATE AND CASE Al JEDEC notes and dimensions apply. CASE 22.03 (70-18) 295MF E823 (continued) ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) [ Characteristic | Symbot Min L. Max | Unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVoss ~25 - Vde (Ip = -10 pAde, Vag = 0 Vde) Zero-Gate Voitage Drain Current loss - -20 nAdc (Vos = -10 Vdc, Vgs = 0) Gate Reverse Current less - 1.0 pAdc (Vgg = -10 Vde, Vpg = 0) ON CHARACTERISTICS Gate-Source Voltage VGsi(tTH) -2.0 6.0 Vde (Vos = +10 Vde, Ip = -10 uAde) Drain Current Ip{on) -3.0 - mAdc (Vps = -10 Vdc, Vgg = -10 Vde) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance Yts 1000 - umhos (Vpg = -10 Vdc, Ip = -2.0 mAdc, f = 1.0 kHz} input Capacitance Ciss - 6.0 pF (Vpg = -10 Vde, Vgg = -10 Vde, f = 1.0 MHz) Reverse Transfer Capacitance Crs - 415 pF (Vpg = -10 Vdc, Vag = -10 Vde, f = 1.0 MHz) 296