Continental Device India Limited Data Sheet Page 1 of 3
2N6101 NPN PLASTIC POWER TRANSISTOR
Medium Power Linear and Switching Service in Consumer, Automotive,
and Industrial Applications
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter) VCBO max. 80 V
Collector-emitter voltage (open base) VCEO max. 70 V
Collector current ICmax. 10 A
Total power dissipation up to TC = 25°C Ptot max. 75 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 10 A; IB = 2 A VCEsat max. 2.5 V
D.C. current gain
IC = 5A; VCE = 4V hFE min. 20
max. 80
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter) VCBO max. 80 V
Collector-emitter voltage (open base) VCEO max. 70 V
Collector-emitter voltage (RBE = 100Ω)V
CER max. 75 V
Emitter-base voltage (open collector) VEBO max. 8.0 V
Collector current ICmax. 10 A
Base current IBmax. 4 A
2N6101
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
OO
K
N
L
FE
CDIM MIN. MAX.
All diminsions in mm.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
12
3
4
TO-220 Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited Data Sheet Page 2 of 3
Total power dissipation up to TC = 25°C Ptot max. 75 W
Derate above 25°C max. 0.6 W/°C
Total power dissipation up to TA = 25°C Ptot max. 1.8 W
Derate above 25°C max. 0.0144 W/°C
Junction temperature Tjmax. 150
ºC
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to ambient Rth j–a 70 °
C/W
From junction to case Rth j–c 1.67 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
VBE = 1.5 V; VCE = 75 V ICEX max. 2.0 mA
VBE = 1.5 V; VCE = 75 V; TC = 150°C ICEX max. 10 mA
IB = 0; VCE = 60 V ICEO max. 2.0 mA
Emitter cut-off current
IC = 0; VEB = 8 V IEBO max. 1.0 mA
Breakdown voltages
IC = 200 mA; IB = 0 VCEO(sus)* min. 70 V
IC = 1 mA; IE = 0 VCBO min. 80 V
IE = 1 mA; IC = 0 VEBO min. 8.0 V
Saturation voltage
IC = 10 A; IB = 2 A VCEsat* max. 2.5 V
Base emitter on voltage
IC = 5 A; VCE = 4 V VBE(on)* max. 1.7 V
D.C. current gain
IC = 5 A; VCE = 4 V hFE* min. 20
max. 80
IC = 10 A; VCE = 4 V hFE* min. 5.0
Small signal current gain
IC = 0.5 A; VCE = 4 V; f = 0.1 MHz |hfe| min. 8.0
max. 28
IC = 0.5 A; VCE = 4 V; f = 1 KHz hfe min. 15
* Pulsed: pulse duration = 300 µs; Duty factor = 0.018.
2N6101
Continental Device India Limited Data Sheet Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com
