June 2006 Rev 2 1/14
14
IRF630M
IRF630MFP
N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP
Mesh Overlay™ Power MOSFET
General features
■Extremely high dv/dt capability
■Very low intrinsic capacitances
■Gate charge minimized
Description
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources. Isolated TO-
220 option simplifies assembly and cuts risk of
accidental short circuit in crowded monitor PCB’s.
Applications
■Switching application
Internal schematic diagram
Type VDSS
(@Tjmax) RDS(on) ID
IRF630M 200 V < 0.40 Ω9 A
IRF630MFP 200 V < 0.40 Ω9 A
123
12
3
TO-220 TO-220FP
www.st.com
Order codes
Part number Marking Package Packaging
IRF630M IRF630M TO-220 Tube
IRF630MFP IRF630MFP TO-220FP Tube
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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1 Electrical ratings
Table 1. Absolute maximum rating
Symbol Parameter Value Unit
IRF630M IRF630MFP
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate voltage (RGS = 20 kW) 200 V
VGS Gate- source voltage ± 20 V
IDDrain current (continuos) at TC = 25°C 9 9 (1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuos) at TC = 100°C 5.7 5.7 (1) A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 36 36 A
PTOT Total dissipation at TC = 25°C 75 30 W
Derating factor 0.6 0.24 W/°C
dv/dt (3)
3. ISD ≤9A, di/dt £300A/µs, VDD £ V(BR)DSS, Tj ≤ TJMAX.
Peak diode recovery voltage slope 5 5 V/ns
VISO Insulation winthstand voltage (DC) -- 2500 V
Tstg Storage temperature –65 to 150 °C
TjMax. operating junction temperature 150 °C
Table 2. Thermal data
TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max 1.67 4.17 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
Tl
Maximum lead temperature for soldering
purpose 300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max) 5A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V) 350 mJ
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 250µA, VGS = 0 200 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V
RDS(on)
Static drain-source on
resistance VGS = 10V, ID = 4.5A 0.35 0.40 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward
transconductance
VDS > ID(on) x RDS(on)max,
ID=4.5A 34 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
540
90
35
700 pF
pF
pF
td(on
tr
tr(Voff)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD = 100V, ID = 4.5A
RG=4.7Ω VGS = 10V
10
15
12
12
14
20
17
17
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 160V, ID = 9A,
VGS = 10V
31
7.5
9
45 nC
nC
nC
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Table 6. Sourse drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
9
36
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage ISD = 9A, VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9A, di/dt = 100A/µs
VDD = 50V, Tj = 150°C
170
0.95
11
ns
nC
A
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characterisics Figure 6. Transfer characteristics
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Figure 7. Transconductance Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 12. Normalized on resistance vs
temperature
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Figure 13. Source-drain diode forward
characteristics
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3 Test circuit
Figure 14. Unclamped Inductive load test
circuit
Figure 15. Unclamped inductive waveform
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times
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Package mechanical data IRF630M - IRF630MFP
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4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
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L2
A
B
D
E
H
G
L6
F
L3
G1
123
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
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5 Revision history
Table 7. Revision history
Date Revision Changes
21-Jun-2004 1Preliminary version
28-Jun-2006 2New template, no content change
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