VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Apr 06 * Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V, Tvj 25 C 1200 V IC Tc = 80 C 2400 A Peak collector current ICM tp = 1 ms, Tc = 80 C 4800 A 20 V 13800 W IF 2400 A Peak forward current IFRM 4800 A Surge current IFSM 16500 A 10 s 4000 V 150 C Total power dissipation DC forward current VGES Ptot -20 Tc = 25 C, per switch (IGBT) VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 900 V, VCEM CHIP 1200 V VGE 15 V, Tvj 125 C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 125 C Case temperature Tc -40 125 C Storage temperature Tstg -40 125 C Mounting torques 2) min DC collector current Gate-emitter voltage 1) VCES Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 2400E120100 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 1200 Collector-emitter 4) saturation voltage VCE sat IC = 2400 A, VGE = 15 V Collector cut-off current ICES VCE = 1200 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 C Gate-emitter threshold voltage Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance L CE Resistance, terminal-chip RCC'+EE' 3) 4) typ max Unit V Tvj = 25 C 1.9 V Tvj = 125 C 2.2 V Tvj = 25 C 12 mA 120 mA -500 500 nA 4.5 6.5 V Tvj = 125 C 50 IC = 2400 A, VCE = 600 V, VGE = -15 V .. 15 V 22.9 C 224 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C 21 nF 9.57 VCC = 600 V, IC = 2400 A, RG = 0.82 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 350 Tvj = 125 C 380 Tvj = 25 C 320 Tvj = 125 C 320 VCC = 600 V, IC = 2400 A, RG = 0.82 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 1150 Tvj = 125 C 1230 Tvj = 25 C 290 Tvj = 125 C 280 VCC = 600 V, IC = 2400 A, VGE = 15 V, RG = 0.82 , L = 60 nH, inductive load Tvj = 25 C 110 Tvj = 125 C 145 VCC = 600 V, IC = 2400 A, VGE = 15 V, RG = 0.82 , L = 60 nH, inductive load Tvj = 25 C 560 Tvj = 125 C 580 tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM CHIP 1200 V ns ns ns ns mJ mJ 13000 A 10 nH TC = 25 C 0.006 TC = 125 C 0.085 m Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1561-00 Apr 06 page 2 of 9 5SNA 2400E120100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol Conditions VF IF = 2400 A Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) VCC = 600 V, IF = 2400 A, VGE = 15 V, RG = 0.82 L = 60 nH inductive load Erec min typ Tvj = 25 C 1.65 Tvj = 125 C 1.7 Tvj = 25 C 940 Tvj = 125 C 1340 Tvj = 25 C 260 Tvj = 125 C 530 Tvj = 25 C 360 Tvj = 125 C 520 Tvj = 25 C 120 Tvj = 125 C 250 max Unit V A C ns mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Thermal properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.0085 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.017 K/W IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) 2) Conditions min max Unit Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K 0.009 K/W Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.018 K/W For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 7) Parameter Symbol Dimensions LxW x Conditions H Typical , see outline drawing min typ max 190 x 140 x 38 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 23 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 33 Mass m 7) typ Unit mm mm 19 mm 32 1380 g Thermal and mechanical properties according to IEC 60747 - 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1561-00 Apr 06 page 3 of 9 5SNA 2400E120100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1561-00 Apr 06 page 4 of 9 5SNA 2400E120100 4800 4800 VCE = 20 V 4000 4000 25 C 3200 3200 IC [A] IC [A] 125 C 2400 1600 2400 1600 125 C 800 800 25 C VGE = 15V 0 0 0 1 2 3 4 0 1 2 3 4 5 VCE [V] Fig. 1 6 7 8 9 10 11 12 VGE [V] Fig. 2 Typical on-state characteristics, chip level 4800 Typical transfer characteristics, chip level 4800 17V 17V 15V 4000 4000 15V 13V 13V 11V 3200 3200 11V 2400 9V IC [A] IC [A] 9V 2400 1600 1600 800 800 Tvj = 125 C Tvj = 25 C 0 0 0 1 2 3 4 0 VCE [V] Fig. 3 Typical output characteristics, chip level 1 2 3 4 5 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1561-00 Apr 06 page 5 of 9 5SNA 2400E120100 3 2 E sw [J] = 1.1 x 10 -7 2 x I C - 2.5 x 10 -5 VCC = 600V VCEM 1200 V RG = 0.82 ohm VGE = 15V Tvj = 125 C Ls = 60 nH 1.5 Eon, Eoff [J] Eon, Eoff [J] 2 VCC = 600 V VCEM 1200 V IC = 2400A VGE = 15 V Tvj = 125 C L = 60 nH x I C + 0.153 1 Eoff Eoff 1 Eon 0.5 Eon 0 0 0 1000 2000 3000 4000 5000 0 1 2 3 IC [A] Fig. 5 5 6 Typical switching energies per pulse vs collector current Fig. 6 8 9 Typical switching energies per pulse vs gate resistor 10 VCC = 600 V VCEM 1200V RG = 0.82 ohm VGE = 15 V Tvj = 125 C L = 60 nH td(on), t r, t d(off), t f [s] td(off) td(off) 1 td(on) 1 tr tf VCC = 600 V VCEM 1200 V IC = 2400 A VGE = 15 V Tvj = 125 C L = 60 nH td(on) tf tr 0.1 0.1 0 1000 2000 3000 4000 5000 0 IC [A] Fig. 7 7 RG [ohm] 10 td(on) tr, t d(off), t f [s] 4 Typical switching times vs collector current 1 2 3 4 5 6 7 8 9 RG [ohm] Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1561-00 Apr 06 page 6 of 9 5SNA 2400E120100 1000 20 VGE = 0V fOSC = 1 MHz VOSC = 50 mV Cies VCC = 600 V 15 100 VGE [V] VCC = 800 V C [nF] Coes 10 10 Cres 5 IC = 2400 A Tvj = 25 C 0 1 0 Fig. 9 5 10 15 20 VCE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 2 4 6 8 10 12 14 Qg [C] 16 18 20 22 Typical gate charge characteristics 2.5 VCC 900 V, Tvj = 125 C VGE = 15 V, RG = 0.82 ohm 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 300 600 900 1200 1500 VCE [V] Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1561-00 Apr 06 page 7 of 9 5SNA 2400E120100 300 1600 VCC = 600 V IF = 2400 A Tvj = 125 C L = 60 nH Irr 350 1400 250 300 1200 250 1000 1400 Irr 1200 1000 Qrr 150 800 600 Erec [mJ] 200 Qrr [C], Irr [A] Erec [mJ] 200 800 150 Erec E rec [mJ] = -1.4 x 10 -5 x I F 2 + 0.13 x I F + 19.5 0 0 1000 2000 3000 4000 RG = 0.82 ohm RG = 1.0 ohm RG = 1.5 ohm 400 200 0 5000 0 1 2 3 4 5 6 7 8 9 di/dt [kA/s] IF [A] Fig. 12 RG = 3.3 ohm 50 200 0 RG = 6.8 ohm RG = 8.2 ohm 50 400 RG = 4.7 ohm VCC = 600 V RG = 0.82 ohm Tvj = 125 C L = 60 nH Erec 100 600 Qrr 100 Qrr [C], Irr [A] 400 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 4800 VCC 900 V di/dt 9000 A/s Tvj = 125 C 4800 25 C 4000 4000 125 C 3200 IR [A] IF [A] 3200 2400 1600 2400 1600 800 800 0 0 0 1 2 3 0 VF [V] Fig. 14 Typical diode forward characteristics, chip level 400 800 1200 VR [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1561-00 Apr 06 page 8 of 9 5SNA 2400E120100 0.1 n Z th (j-c) (t) = R i (1 - e -t/ i ) Zth(j-c) Diode 0.01 i =1 0.001 i 1 2 3 4 IGBT Z th(j-c) IGBT Ri(K/kW) 6.36 1.35 0.57 0.213 i(ms) 203 16.6 1.11 0.258 DIODE Zth(j-c) [K/W] IGBT, DIODE Analytical function for transient thermal impedance: Ri(K/kW) 11.9 2.79 1.14 1 i(ms) 209 26.8 4.96 1.17 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: * 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays * 5SYA 2043-01 Load - cycle capability of HiPaks * 5SZK 9120-00 Specification of environmental class for HiPak ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1561-00 Apr 06