ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 1200
V
IC = 2400
A
Doc. No. 5SYA1561-00 Apr 06
Low-loss, rugged SPT chip-set
Smooth switching SPT chip-set for
good EMC
Industry standard package
High power density
AlSiC base-plate for high power
cycling capability
AlN substrate for low thermal
resistance
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj 25 °C 1200
V
DC collector current IC Tc = 80 °C 2400
A
Peak collector current ICM tp = 1 ms, Tc = 80 °C 4800
A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 13800
W
DC forward current IF 2400
A
Peak forward current IFRM 4800
A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 16500
A
IGBT short circuit SOA tpsc VCC = 900 V, VCEM CHIP 1200 V
VGE 15 V, Tvj 125 °C 10 µs
Isolation voltage Visol 1 min, f = 50 Hz 4000
V
Junction temperature Tvj 150 °C
Junction operating temperature Tvj(op) -40 125 °C
Case temperature Tc -40 125 °C
Storage temperature Tstg -40 125 °C
Ms Base-heatsink, M6 screws 4 6
Mt1 Main terminals, M8 screws 8 10
Mounting torques 2) Mt2 Auxiliary terminals, M4 screws 2 3 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB HiPak
TM
IGBT Module
5SNA 2400E120100
PRELIMINARY
5SNA 2400E120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1561-00 Apr 06 page 2 of 9
IGBT characteristic values 3)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 10 mA, Tvj = 25 °C 1200
V
Tvj = 25 °C 1.9 V
Collector-emitter 4)
saturation voltage VCE sat IC = 2400 A, VGE = 15 V Tvj = 125 °C 2.2 V
Tvj = 25 °C 12 mA
Collector cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 125 °C 50 120 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 2400 A, VCE = 600 V,
VGE = -15 V .. 15 V 22.9 µC
Input capacitance Cies 224
Output capacitance Coes 21
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 9.57 nF
Tvj = 25 °C 350
Turn-on delay time td(on) Tvj = 125 °C 380 ns
Tvj = 25 °C 320
Rise time tr
VCC = 600 V,
IC = 2400 A,
RG = 0.82 ,
VGE = ±15 V,
Lσ = 60 nH, inductive load Tvj = 125 °C 320 ns
Tvj = 25 °C 1150
Turn-off delay time td(off) Tvj = 125 °C 1230
ns
Tvj = 25 °C 290
Fall time tf
VCC = 600 V,
IC = 2400 A,
RG = 0.82 ,
VGE = ±15 V,
Lσ = 60 nH, inductive load Tvj = 125 °C 280 ns
Tvj = 25 °C 110
Turn-on switching energy Eon VCC = 600 V, IC = 2400 A,
VGE = ±15 V, RG = 0.82 ,
Lσ = 60 nH, inductive load Tvj = 125 °C 145 mJ
Tvj = 25 °C 560
Turn-off switching energy Eoff VCC = 600 V, IC = 2400 A,
VGE = ±15 V, RG = 0.82 ,
Lσ = 60 nH, inductive load Tvj = 125 °C 580 mJ
Short circuit current ISC tpsc 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM CHIP 1200 V 13000
A
Module stray inductance Lσ CE 10 nH
TC = 25 °C 0.006
Resistance, terminal-chip RCC’+EE’ T
C
= 125 °C 0.085
m
3) Characteristic values according to IEC 60747 9
4) Collector-emitter saturation voltage is given at chip level
5SNA 2400E120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1561-00 Apr 06 page 3 of 9
Diode characteristic values 5)
Parameter Symbol Conditions min typ max
Unit
Tvj = 25 °C 1.65
Forward voltage 6) VF IF = 2400 A Tvj = 125 °C 1.7 V
Tvj = 25 °C 940
Reverse recovery current Irr Tvj = 125 °C 1340
A
Tvj = 25 °C 260
Recovered charge Qrr Tvj = 125 °C 530 µC
Tvj = 25 °C 360
Reverse recovery time trr Tvj = 125 °C 520 ns
Tvj = 25 °C 120
Reverse recovery energy Erec
VCC = 600 V,
IF = 2400 A,
VGE = ±15 V,
RG = 0.82
Lσ = 60 nH
inductive load
Tvj = 125 °C 250 mJ
5) Characteristic values according to IEC 60747 2
6) Forward voltage is given at chip level
Thermal properties 7)
Parameter Symbol Conditions min typ max
Unit
IGBT thermal resistance
junction to case Rth(j-c)IGBT 0.0085
K/W
Diode thermal resistance
junction to case Rth(j-c)DIODE
0.017
K/W
IGBT thermal resistance 2)
case to heatsink Rth(c-s)IGBT
IGBT per switch, λ grease = 1W/m x K 0.009
K/W
Diode thermal resistance 7)
case to heatsink Rth(c-s)DIODE
Diode per switch, λ grease = 1W/m x K 0.018
K/W
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties 7)
Parameter Symbol Conditions min typ max
Unit
Dimensions L x W x H
Typical , see outline drawing 190 x 140 x 38 mm
Term. to base:
23
Clearance distance in air da according to IEC 60664-1
and EN 50124-1 Term. to term:
19 mm
Term. to base:
33
Surface creepage distance ds according to IEC 60664-1
and EN 50124-1 Term. to term:
32 mm
Mass m 1380
g
7) Thermal and mechanical properties according to IEC 60747 15
5SNA 2400E120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1561-00 Apr 06 page 4 of 9
Electrical configuration
Outline drawing 2)
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
5SNA 2400E120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1561-00 Apr 06 page 5 of 9
0
800
1600
2400
3200
4000
4800
0 1 2 3 4
VCE [V]
IC [A]
25 °C
125 °C
VGE = 15V
0
800
1600
2400
3200
4000
4800
0 1 2 3 4 5 6 7 8 9 101112
VGE [V]
IC [A]
V
CE = 20 V
25 °C
125 °C
Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level
0
800
1600
2400
3200
4000
4800
0 1 2 3 4
VCE [V]
IC [A]
Tvj = 25 °C
9V
11V
13V
15V
17V
0
800
1600
2400
3200
4000
4800
0 1 2 3 4 5
VCE [V]
IC [A]
Tvj = 125 °C
9V
11V
13V
15V
17V
Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level
5SNA 2400E120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1561-00 Apr 06 page 6 of 9
0
1
2
3
01000 2000 3000 4000 5000
IC [A]
Eon, Eoff [J]
Eon
Eoff
V
CC = 600V
V
CEM 1200 V
RG = 0.82 ohm
V
GE = ±15V
Tvj = 125 °C
Ls = 60 nH
Esw [J] = 1.1 x 10-7 x IC2 - 2.5 x 10-5 x IC + 0.153
0
0.5
1
1.5
2
0123456789
RG [ohm]
Eon, Eoff [J]
V
CC = 600 V
V
CEM 1200 V
IC = 2400A
V
GE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
Eon
Eoff
Fig. 5 Typical switching energies per pulse
vs collector current Fig. 6 Typical switching energies per pulse
vs gate resistor
0.1
1
10
01000 2000 3000 4000 5000
IC [A]
td(on) tr, td(off), tf s]
V
CC = 600 V
V
CEM 1200V
RG = 0.82 ohm
V
GE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
td(off)
td(on)
tf
tr
0.1
1
10
0123456789
RG [ohm]
td(on), tr, td(off), tf [µs]
td(on)
td(off)
tr
tf
V
CC = 600 V
V
CEM 1200 V
IC = 2400 A
V
GE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
Fig. 7 Typical switching times
vs collector current Fig. 8 Typical switching times
vs gate resistor
5SNA 2400E120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1561-00 Apr 06 page 7 of 9
1
10
100
1000
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
Cies
Coes
Cres
V
GE = 0V
fOSC = 1 MHz
V
OSC = 50 mV
0
5
10
15
20
0246810 12 14 16 18 20 22
Qg [µC]
VGE [V]
V
CC
= 600 V
VCC = 800 V
IC = 2400 A
Tvj = 25 °C
Fig. 9 Typical capacitances
vs collector-emitter voltage Fig. 10 Typical gate charge characteristics
0
0.5
1
1.5
2
2.5
0300 600 900 1200 1500
VCE [V]
ICpulse / IC
Chip
Module
V
CC 900 V, Tvj = 125 °C
V
GE = ±15 V, RG = 0.82 ohm
Fig. 11 Turn-off safe operating area (RBSOA)
5SNA 2400E120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1561-00 Apr 06 page 8 of 9
0
50
100
150
200
250
300
350
400
01000 2000 3000 4000 5000
IF [A]
Erec [mJ]
0
200
400
600
800
1000
1200
1400
1600
Qrr [µC], Irr [A]
V
CC = 600 V
RG = 0.82 ohm
Tvj = 125 °C
Lσ = 60 nH
Erec
Irr
Qrr
Erec [mJ] = -1.4 x 10-5 x IF2 + 0.13 x IF + 19.5
0
50
100
150
200
250
300
1 2 3 4 5 6 7 8 9
di/dt [kA/µs]
Erec [mJ]
0
200
400
600
800
1000
1200
1400
Qrr [µC], Irr [A]
R
G
= 1. 0 o hm
R
G
= 1.5 ohm
R
G
= 3.3 ohm
R
G
= 4.7 ohm
R
G
= 6.8 o hm
V
CC = 600 V
IF = 2400 A
Tvj = 125 °C
Lσ = 60 nH
Erec Qrr
Irr
R
G
= 0.82 ohm
R
G
= 8.2 ohm
Fig. 12 Typical reverse recovery characteristics
vs forward current Fig. 13 Typical reverse recovery characteristics
vs di/dt
0
800
1600
2400
3200
4000
4800
0 1 2 3
VF [V]
IF [A]
25 °C
125 °C
0
800
1600
2400
3200
4000
4800
0400 800 1200
VR [V]
IR [A]
V
CC 900 V
di/dt 9000 A/µs
Tvj = 125 °C
Fig. 14 Typical diode forward characteristics,
chip level Fig. 15 Safe operating area diode (SOA)
5SNA 2400E120100
ABB Switzerland Ltd, Semiconductors reserves the right t
o change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1561-00 Apr 06
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-(jth
=
i
τ
i 1 2 3 4
Ri(K/kW) 6.36 1.35 0.57 0.213
IGBT
τi(ms) 203 16.6 1.11 0.258
Ri(K/kW) 11.9 2.79 1.14 1
DIODE
τi(ms) 209 26.8 4.96 1.17
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Zth(j-c) [K/W] IGBT, DIODE
Zth(j-c) IGBT
Zth(j-c) Diode
Fig. 16 Thermal impedance vs time
For detailed information refer to:
5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays
5SYA 2043-01 Load – cycle capability of HiPaks
5SZK 9120-00 Specification of environmental class for HiPak