5SNA 2400E120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1561-00 Apr 06 page 2 of 9
IGBT characteristic values 3)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 10 mA, Tvj = 25 °C 1200
V
Tvj = 25 °C 1.9 V
Collector-emitter 4)
saturation voltage VCE sat IC = 2400 A, VGE = 15 V Tvj = 125 °C 2.2 V
Tvj = 25 °C 12 mA
Collector cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 125 °C 50 120 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 2400 A, VCE = 600 V,
VGE = -15 V .. 15 V 22.9 µC
Input capacitance Cies 224
Output capacitance Coes 21
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 9.57 nF
Tvj = 25 °C 350
Turn-on delay time td(on) Tvj = 125 °C 380 ns
Tvj = 25 °C 320
Rise time tr
VCC = 600 V,
IC = 2400 A,
RG = 0.82 Ω,
VGE = ±15 V,
Lσ = 60 nH, inductive load Tvj = 125 °C 320 ns
Tvj = 25 °C 1150
Turn-off delay time td(off) Tvj = 125 °C 1230
ns
Tvj = 25 °C 290
Fall time tf
VCC = 600 V,
IC = 2400 A,
RG = 0.82 Ω,
VGE = ±15 V,
Lσ = 60 nH, inductive load Tvj = 125 °C 280 ns
Tvj = 25 °C 110
Turn-on switching energy Eon VCC = 600 V, IC = 2400 A,
VGE = ±15 V, RG = 0.82 Ω,
Lσ = 60 nH, inductive load Tvj = 125 °C 145 mJ
Tvj = 25 °C 560
Turn-off switching energy Eoff VCC = 600 V, IC = 2400 A,
VGE = ±15 V, RG = 0.82 Ω,
Lσ = 60 nH, inductive load Tvj = 125 °C 580 mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM CHIP ≤ 1200 V 13000
A
Module stray inductance Lσ CE 10 nH
TC = 25 °C 0.006
Resistance, terminal-chip RCC’+EE’ T
C
= 125 °C 0.085
mΩ
3) Characteristic values according to IEC 60747 – 9
4) Collector-emitter saturation voltage is given at chip level