Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
DAN202UM
lApplications lDimensions (Unit : mm) 　　lLand size figure (Unit : mm)
High speed switching
lFeatures
1)Ultra small mold type. (UMD3F)
2)High reliability
lConstruction
Silicon epitaxial planer
lStructure
lAbsolute maximum ratings (Ta=25C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW
Tj
C
Tstg
C
lElectrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
VF- - 1.2 V IF=100mA
IR- - 0.1 μA VR=70V
Ct - - 3.5 pF
VR=6V , f=1MHz
trr - - 4 ns
VR=6V , IF=5mA , RL=50Ω
Reverse voltage (DC)
80
lTaping dimensions (Unit : mm)
Parameter
Limits
Reverse voltage (repetitive peak)
80
Forward current (single)
300
Average rectified forward voltage (single)
100
Surge current (t=1us)
4
Power dissipation
200
Junction temperature
150
Storage temperature
-55 to +150
Reverse recovery time
Parameter
Forward voltage
Reverse current
Capacitance between terminals
UMD3
0.9MIN.
0.65
1.3
0.8MIN
ROHM : UMD3F
JEITA : SC-70
JEDEC : SOT-323
dot (year week factory)
2.0±0.1
2.1±0.1
1.3±0.1
1.25±0.1
0.65
0.65
0.32
+0.1
-0.05
0～0.1
0.13±0.05
(1)
(3)
(2)
0.425
0.425
0.9±0.1
0.53±0.1
各リードとも
同寸法
0.53±0.1
Each lead has
same dimensions
4.0±0.1
4.0±0.1
2.0±0.05
φ1.55±0.05
3.5±0.05
1.75±0.1
8.0±0.2
φ0.5±0.05
2.4±0.1
2.25±0.1
　　　　 0
5.5±0.2
1.25±0.1
2.4±0.1
0.3±0.1
0～0.1
1/3
2011.12 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAN202UM
　
0.001
0.01
0.1
1
10
100
0100 200 300 400 500 600 700 800 900 1000
Ta=25°C
Ta=75°C
Ta=125°C
Ta=150°C
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
0.1
1
10
100
1000
10000
100000
010 20 30 40 50 60 70 80
Ta=25°C
Ta=75°C
Ta=125°C Ta=150°C
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
0.1
1
10
0 5 10 15 20
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
860
870
880
890
900
910
920
930
940
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
AVE:899mV
Ta=25°C
IF=100mA
n=30pcs
0
10
20
30
40
50
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
Ta=25°C
VR=80V
n=10pcs
AVE:14nA
0
1
2
3
Ta=25°C
VR=6V
f=1MHz
n=10pcs
AVE:0.7pF
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
2/3 2011.12 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAN202UM
　
0
5
10
15
20
AVE:3.50A
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8.3ms
IFSM 1cyc
0
1
2
3
4
5
6
7
8
9
10
AVE:1.93ns
Ta=25°C
VR=6V
IF=5mA
RL=50Ω
n=10pcs
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
0
1
2
3
4
5
110 100
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
8.3ms
IFSM
1cyc
8.3ms
1
10
100
110 100
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
t
IFSM
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THERMAL IMPEDANCE:Rth (
°
C/W)
0
1
2
3
4
5
6
7
8
9
10
AVE:0.97kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:2.54kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
3/3 2011.12 - Rev.A
R1120A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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Notes