BCP52 - Fairchild Semiconductor

BCP52 — PNP General-Purpose Amplifier

BCP52 Rev. 1.1.0 1

March 2014

BCP52

PNP General-Purpose Amplifier

Ordering Information

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the de vice. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operation.

Part Number Marking Package Packing Method

BCP52 BCP52 SOT-223 4L Tape and Reel

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage -60 V

VCBO Collector-Base Voltage -60 V

VEBO Emitter-Base Voltage -5 V

ICCollector Current - Continuous -1.2 A

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Description

This device is designed for general-purpose medium-

power amplifiers and switching circuits for collector cur-

rents to 1.0 A. Sourced from process 78.

SOT-223

1. Base 2,4. Collector 3. Emitter

BCP52 — PNP General-Purpose Amplifier

BCP52 Rev. 1.1.0 2

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Max. Unit

PDTotal Device Dissipation 1.5 W

Derate Above 25°C 12 mW/°C

RθJA Thermal Resistance, Junction to Ambient 83.3 °C/W

Symbol Parameter Conditions Min. Max. Unit

BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -60 V

BVCBO Collector -Base Breakdown Volta ge IC = -100 μA, IE = 0 -60 V

BVEBO Emitter-Base Breakdown Vo ltage IE = -10 μA, IC = 0 -5.0 V

ICBO Collector-Base Cut- Off Current VCB = -30 V, IE = 0 -100 nA

VCB = -30 V, IE = 0, TA = 125°C -10 μA

IEBO Emitter-Base Cut-Off Current VEB = -5.0 V, IC = 0 -10 μA

hFE DC Current G a in IC = -5.0 mA, VCE = -2.0 V 25

IC = -150 mA, VCE = -2.0 V 40 250

IC = -500 mA, VCE = -2.0 V 25

VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mV -0.5 V

VBE(on) Base-Emitter On Voltage IC = -500 mA, VCE = -2.0 V -1.0 V

BCP52 — PNP General-Purpose Amplifier

BCP52 Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. Typical Pulsed Current Gain vs.

Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.

Collector Current

Figure 3. Base-Emitter Saturation V olt age vs.

Collector Current Figure 4. Base-Emitter On Voltage vs.

Collector Current

Figure 5. Collector Cut-Off Current vs.

Ambient Temperature Figure 6. Collector-Base Capacitance vs.

Collector-Base Voltage

0 .01 0. 1 1

100

200

300

400

I - COLLECTOR CURRENT (A)

h - TYPICAL PULSED CURRENT GAIN

- 40 °C

25 °C

V = 5V

125 °C

0.01 0.1 1 1.5

0.1

0.2

0.3

0.4

0.5

0.6

I - COLLECTOR CURRENT (A)

V - COLLECTOR-EMITTER VOLTAGE (V)

CESAT

β= 1 0

125 °C

- 40 °C

25 °C

1 10 100 1000

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER VOLTAGE (V)

BESAT

β= 10

125 °C

- 40 °C

25 °C

1 10 100 1000

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER ON VOLTAGE (V)

BE(O N)

125 °C

- 40 °C

25 °C

V = 5V

25 50 75 100 125 150

0.1

10 0

T - AMBIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

V = 40V

CBO

0 4 8 1216202428

V - COLLECTOR-BASE VOLTAGE (V)

- COLLECTOR-BASE CAPACITANCE (pF)

obo

f = 1.0 MHz

BCP52 — PNP General-Purpose Amplifier

BCP52 Rev. 1.1.0 4

Typical Performance Characteristics (Continued)

Figure 7. Gain Bandwidth Product vs.

Collector Current Figure 8. Power Dissipation vs.

Ambient Temperature

1 10 100 1000

100

150

200

250

I - COLLECTOR CURRENT (mA)

h - GAIN BANDWIDTH PRODUCT (MHz)

V = 10V

0 255075100125150

0.25

0.5

0.75

1.25

1.5

TEMPERATURE ( C)

P - POWER DISSIPATION (W)

SOT-223

BCP52 — PNP General-Purpose Amplifier

BCP52 Rev. 1.1.0 5

Physical Dimensions

Figure 9. MOLDED PACKAGE, SOT-223, 4 LEAD (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MA/MA04A.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf.

SOT-223

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intended to be an exhaustive list of all such trademarks.

AccuPower¥

X-CAP®*

BitSiC

Build it Now

Core

PLUS¥

Core

POWER¥

CROSSVOLT

CTL

Current Transfer Logic

DEUXPEED

Dual

Cool™

EcoSPARK

Effic

ientMax¥

SBC¥

Fairchild

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FACT Quiet Series

FACT

FAST

FastvCore

FETBench

FPS

F-PFS¥

FRFET

Global Power Resource

GreenBridge

Green FPS

¥ e-Series¥

max¥

GTO

IntelliMAX

ISOPLANAR

Making Small Speakers Sound Louder

and Better™

MegaBuck

MICROCOUPLER

MicroFET

MicroPak

MicroPak2

MillerDrive

MotionMax

mWSaver

OptoHiT

OPTOLOGIC

OPTOPLANAR

PowerTrench

PowerXS™

Programmable Active Droop

QFET

Quiet Series

RapidConfigure

Saving our world, 1mW

/W/kW

at a time™

SignalWise

SmartMax

SMART START

Solutions for Your Success

SPM

STEALTH

SuperFET

SuperSOT

¥-3

SuperSOT

¥-6

SuperSOT

¥-8

SupreMOS

SyncFET

Sync-Lock™

®*

TinyBoost

TinyBuck

TinyCalc

TinyLogic

TINYOPTO

TinyPower

TinyPWM

TinyWire

ranSiC¥

TriFault Detect

RUECURRENT®*

PSerDes¥

UHC

Ultra FRFET

UniFET

VCX

VisualMax

VoltagePlus

XS™

௝❺™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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reasonably expected to result in a significant injury of the user.

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance

Information

Formative

In Design

Datasheet contains the design specifications for product development. Specifications may change

in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I68

Mouser Electronics

Authorized Distributor

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BCP52