Sep.1998
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.87 22.0
G 0.16 4.0
H 0.24 6.0
K 0.71 18.0
Dimensions Inches Millimeters
K 0.71 18.0
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
S 0.25 Dia. 6.5 Dia.
T 0.6 15.15
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
ode and an anode-collector con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Application:
uBrake
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM300E3U-12H is a
600V (VCES), 300 Ampere IGBT
Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 300 12
MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
CM
A
S (4 - Mounting
Holes)
B
3 - M6 Nuts
ET
D
Q
KKK
F
R
QN G
P
H
CL
M
T
C
Measured
Point
E2
E2
G2
C1
C2E1
http://store.iiic.cc/
Sep.1998
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM300E3U-12H Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 300 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 600* Amperes
Emitter Current** (Tc = 25°C) IE 300 Amperes
Peak Emitter Current** IEM 600* Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc890 Watts
Mounting Torque, M6 Main Terminal – 3.5~4.5 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts
IC = 300A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge QGVCC = 300V, IC = 300A, VGE = 15V – 600 – nC
Emitter-Collector V oltage** VEC IE = 300A, VGE = 0V – – 2.6 Volts
Emitter-Collector Voltage VFM IF = 300A, Clamp Diode Part – – 2.6 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 26.4 nF
Output Capacitance Coes VCE = 10V, VGE = 0V – – 14.4 nF
Reverse Transfer Capacitance Cres ––4nF
Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 300A, – – 250 ns
Load Rise Time trVGE1 = VGE2 = 15V, – – 600 ns
Switch Turn-off Delay T ime td(off) RG = 2.1Ω, Resistive – – 350 ns
Times Fall Time tfLoad Switching Operation – – 300 ns
Diode Reverse Recovery Time** trr IE = 300A, diE/dt = -600A/µs – – 160 ns
Diode Reverse Recovery Charge** Qrr IE = 300A, diE/dt = -600A/µs – 0.72 – µC
Diode Reverse Recovery Time trr IF = 300A, Clamp Diode Part – – 160 ns
Diode Reverse Recovery Charge Qrr diF/dt = -600A/µs – 0.72 – µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
http://store.iiic.cc/
Sep.1998
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT – – 0.14 °C/W
Thermal Resistance, Junction to Case R th(j-c)D Per FWDi – – 0.24 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Clamp Diode Part – – 0.24 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.020 – °C/W
MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
200
100
0
V
GE
= 20V
15
13
12
11
8
T
j
= 25
o
C
300
400
600
500
10
9
14
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0 4 8 12 16 20
400
200
100
0
300
500
600
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 100 200 300 400
4
3
2
1
0600500
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0 4 8 12 16 20
8
6
4
2
0
T
j
= 25°C
I
C
= 120A
I
C
= 600A
I
C
= 300A
0.6 1.0 1.4 1.8 2.62.2 3.0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
http://store.iiic.cc/
Sep.1998
MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.14°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.24°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
0 200
15
10
5
0400 800600
VCC = 300V
VCC = 200V
IC = 300A
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
trr
Irr
10
2
10
0
10
1
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
di/dt = -600A/µsec
Tj = 25°C
COLLECTOR CURRENT, IC, (AMPERES)
10
3
10
1
10
2
10
3
10
2
10
1
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 2.1Ω
Tj = 125°C
tf
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
http://store.iiic.cc/