Preliminary Technical Information IXTP60N10TM TrenchMVTM Power MOSFET VDSS ID25 = 100V = 33A 19m RDS(on) N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP...M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M 100 100 V V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, pulse width limited by TJM 33 180 A A IA EAS TC = 25C TC = 25C 10 500 A mJ PD TC = 25C 60 W -55 ... +175 175 -55 ... +175 C C C 300 260 C C 1.13/10 Nm/lb.in 2.5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque Weight D G Isolated Tab S G = Gate S = Source D = Drain Features * Plastic overmolded tab for electrical isolation * Low RDS(ON) - for minimum on-state conduction losses * Fast switching Advantages z z Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 50A 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 4.5 z V Applications V z 100 nA TJ = 150C 1 A 100 A 19 m z z z z z z (c) 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications DS100022(08/008) IXTP60N10TM Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) gfs VDS= 10V, ID = 0.5 * ID25, Note 1 Typ. 25 42 S 2650 pF 335 pF 60 pF 27 ns 40 ns 43 ns 37 ns 49 nC 15 nC 11 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 10A RG = 15 (External) Qg(on) Qgs OVERMOLDED TO-220 W/ FORMED LEAD (IXTP...M) Min. VGS= 10V, VDS = 0.5 * VDSS, ID = 10A Qgd Max. 2.5 C/W RthJC 1 2 3 Terminals: 1 - Gate 2 - Collector 3 - Emitter Source-Drain Diode Symbol Test Conditions TJ = 25C unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 60 A Repetitive, pulse width limited by TJM 240 A VSD IF = 25A, VGS = 0V, Note 1 1.2 V trr IF = 30A, VGS = 0V IRM QRM Notes 59 ns -di/dt = 100A/s 3.8 A VR = 50V 112 nC 1. Pulse test, t 300 s; duty cycle, d 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP60N10TM Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 200 60 VGS = 10V 9V 8V 55 50 160 45 9V 140 ID - Amperes 40 ID - Amperes VGS = 10V 180 7V 35 30 25 20 120 8V 100 80 60 7V 15 10 40 6V 5 20 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 6V 0 2 4 6 8 50 16 18 20 22 24 26 VGS = 10V 2.6 2.4 RDS(on) - Normalized 45 ID - Amperes 14 2.8 VGS = 10V 9V 8V 55 12 Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150C 60 10 VDS - Volts VDS - Volts 40 7V 35 30 25 6V 20 15 2.2 2.0 1.8 I D = 60A 1.6 I D = 30A 1.4 1.2 1.0 10 0.8 5V 5 0.6 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 40 3.2 VGS = 10V 3.0 30 2.6 2.4 ID - Amperes RDS(on) - Normalized 35 TJ = 175C 15V - - - - 2.8 2.2 2.0 1.8 25 20 15 1.6 TJ = 25C 1.4 10 1.2 5 1.0 0 0.8 0 15 30 45 60 75 90 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 105 120 135 150 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTP60N10TM Fig. 8. Transconductance Fig. 7. Input Admittance 70 90 TJ = - 40C 80 60 70 50 g f s - Siemens ID - Amperes 60 50 40 TJ = 150C 25C - 40C 30 25C 40 30 150C 20 20 10 10 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 10 20 30 VGS - Volts 40 50 60 70 80 90 45 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 180 160 140 9 VDS = 50V 8 I G = 10mA I D = 10A VGS - Volts IS - Amperes 7 120 100 80 TJ = 150C 6 5 4 60 3 TJ = 25C 40 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 5 10 VSD - Volts 15 20 25 30 35 40 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 10.00 Ciss 1,000 Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz Coss 100 1.00 0.10 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_60N10T(2V)8-07-08-A IXTP60N10TM Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 60 60 RG = 15 RG = 15 55 VGS = 10V 55 VGS = 10V VDS = 50V 50 t r - Nanoseconds t r - Nanoseconds VDS = 50V 45 I 40 D = 30A 35 TJ = 25C 50 45 40 35 I 30 D TJ = 125C = 10A 30 25 25 25 35 45 55 65 75 85 95 105 115 125 10 12 14 16 18 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 170 150 22 td(on) - - - - 38 60 10A < I D < 30A 90 40 I D = 10A 70 30 50 20 30 t f - Nanoseconds t r - Nanoseconds 50 30 35 40 45 50 td(off) - - - - VDS = 50V 36 35 48 34 44 25 55 35 45 95 105 115 40 125 60 95 50 80 39 40 65 35 30 34 43 22 24 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 26 28 30 t f - Nanoseconds 110 - Nanoseconds 70 47 20 155 VDS = 50V 125 35 32 100 80 51 33 170 TJ = 125C, VGS = 10V 140 36 TJ = 25C I D = 10A, 30A 90 55 TJ = 125C td(off) - - - - t d(off) - Nanoseconds 59 d(off) VDS = 50V 18 85 185 tf 110 63 t t f - Nanoseconds td(off) - - - - RG = 15, VGS = 10V 16 75 120 67 tf 14 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 40 37 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 38 52 I D = 30A RG - Ohms 39 56 RG = 15, VGS = 10V 33 10 25 tf 37 t d(off) - Nanoseconds 110 t d(on) - Nanoseconds 60 I D = 30A 12 30 I D = 10A 130 10 28 64 VDS = 50V 20 26 39 70 TJ = 125C, VGS = 10V 15 24 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 80 tr 20 ID - Amperes 50 15 20 25 30 35 40 45 50 55 RG - Ohms IXYS REF: T_60N10T(2V)8-07-08-A