© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ100 V
VGSM Transient ± 30 V
ID25 TC= 25°C33 A
IDM TC= 25°C, pulse width limited by TJM 180 A
IATC= 25°C10 A
EAS TC= 25°C 500 mJ
PDTC= 25°C60 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque 1.13/10 Nm/lb.in
Weight 2.5 g
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP60N10TM VDSS = 100V
ID25 = 33A
RDS(on) ≤ ≤
≤ ≤
≤ 19mΩΩ
ΩΩ
Ω
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 100 V
VGS(th) VDS = VGS, ID = 50μA 2.5 4.5 V
IGSS VGS = ± 20V, VDS = 0V ± 100 nA
IDSS VDS = VDSS 1 μA
VGS = 0V TJ = 150°C 100 μA
RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 19 mΩ
DS100022(08/008)
Preliminary Technical Information
G = Gate D = Drain
S = Source
OVERMOLDED TO-220 W/ FORMED
LEAD (IXTP...M)
G
D
SIsolated Tab
Features
•Plastic overmolded tab for electrical
isolation
•Low RDS(ON)
- for minimum on-state conduction
losses
•Fast switching
Advantages
zEasy to mount
zSpace savings
zHigh power density
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor drives
zUninterruptible power supplies
zHigh speed power switching
applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP60N10TM
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 25 42 S
Ciss 2650 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 335 pF
Crss 60 pF
td(on) 27 ns
tr 40 ns
td(off) 43 ns
tf 37 ns
Qg(on) 49 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 10A 15 nC
Qgd 11 nC
RthJC 2.5 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 60 A
ISM Repetitive, pulse width limited by TJM 240 A
VSD IF = 25A, VGS = 0V, Note 1 1.2 V
trr 59 ns
IRM 3.8 A
QRM 112 nC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes 1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
RG = 15Ω (External)
IF = 30A, VGS = 0V
-di/dt = 100A/μs
VR = 50V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
OVERMOLDED TO-220 W/ FORMED
LEAD (IXTP...M)
123
Terminals: 1 - Gate
2 - Collector
3 - Emitter
© 2008 IXYS CORPORATION, All rights reserved
IXTP60N10TM
Fi g . 6. D r ain C u r r ent vs. C ase Temp er atur e
0
5
10
15
20
25
30
35
40
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 1. Ou tp u t C h aracter isti cs
@ 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
60
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
Fig. 2. Extended Output Characteristics
@ 25º C
0
20
40
60
80
100
120
140
160
180
200
0 2 4 6 8 101214161820222426
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
7V
9V
Fi g . 3. Ou tpu t C har a cter i stics
@ 150ºC
0
5
10
15
20
25
30
35
40
45
50
55
60
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 30A Val ue
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 60A
I
D
= 30A
Fig. 5. R
DS(on)
Normalized to I
D
= 30A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
0 15 30 45 60 75 90 105 120 135 150
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP60N10TM
Fi g . 7. I n p u t Admi ttanc e
0
10
20
30
40
50
60
70
80
90
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
0 102030405060708090
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 10A
I
G
= 10mA
Fi g . 11. C ap a ci tan ce
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g. 12 . Maxi mu m Tr an si e n t Th er mal
Impedance
0.01
0.10
1.00
10.00
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: T_60N10T(2V)8-07-08-A
© 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_60N10T(2V)8-07-08-A
IXTP60N10TM
Fig. 14. Resistive T urn-on Rise T i me
vs. D r ain C u r r ent
25
30
35
40
45
50
55
60
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
r
- Nanoseconds
RG
= 15Ω
VGS = 10V
VDS = 50V
TJ = 125ºC
TJ = 25ºC
Fi g. 15. R esisti ve Tu r n -on Swi tchi n g Times
vs. Ga te R esi stance
30
50
70
90
110
130
150
170
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
10
20
30
40
50
60
70
80
t
d(on)
- Nanoseconds
t r
td(on)
- - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 30A
I D = 10A
10A < I D < 30A
Fi g . 16. R e si sti ve Turn -o ff Sw i tch i n g Time s
vs. Junction Temperature
33
34
35
36
37
38
39
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
44
48
52
56
60
64
t
d(off)
- Nanoseconds
t f
td(off)
- - - -
RG = 15Ω, VGS = 10V
VDS = 50V
I D = 10A
I D = 30A
Fi g . 17. R esi st i ve Tur n -o f f Swi tch i ng Time s
vs. D r ain C u r r en t
32
33
34
35
36
37
38
39
40
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
f
- Nanoseconds
35
39
43
47
51
55
59
63
67
t
d ( o f f )
- Nanoseconds
t f
td(off)
- - - -
RG = 15Ω, VGS = 10V
VDS = 50V
TJ = 125ºC
TJ = 25ºC
Fig. 13. Resistive T urn-on Rise T i me
vs. Junction Temperature
25
30
35
40
45
50
55
60
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
RG
= 15Ω
VGS = 10V
VDS = 50V
I D = 30A
I D = 10A
Fi g . 18. R e si sti ve Turn -o ff Sw i tch i n g Time s
vs. Gate Resistan ce
30
40
50
60
70
80
90
100
110
120
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
50
65
80
95
110
125
140
155
170
185
t
d(off)
- Nanoseconds
t f
td(off)
- - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 10A, 30A
