Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = 1000V 10A 1.4 300ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 10 A IDM TC = 25C, pulse width limited by TJM 25 A IA EAS TC = 25C TC = 25C 5 500 A mJ dV/dt IS IDM, VDD VDSS, TJ 150C 15 V/ns PD TC = 25C 380 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ TL Maximum lead temperature for soldering 300 C TSOLD Plastic body for 10s 260 C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..14.6 N/lb. Weight TO-247 PLUS 220 types 6 4 g g G D S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) TO-247 (IXFH) D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z International standard packages Fast recovery diode Avalanche rated Low package inductance Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS z z z V Applications: 6.5 V VGS = 30V, VDS = 0V 100 nA IDSS VDS = VDSS VGS = 0V 25 A 1.25 mA z RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 z TJ = 125C (c) 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density 1.4 z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls DS99922(09/08) IXFH10N100P IXFV10N100P IXFV10N100PS Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 4.2 VDS = 20V, ID = 0.5 * ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate input resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 3.3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 6.5 S 3030 pF 200 pF 34 pF 1.8 38 ns 45 ns 47 ns 75 ns 56 nC 19 nC 30 nC 0.33 C/W RthJC RthCS PLUS220 (IXFV) Outline (TO-247 & PLUS220) 0.21 Source-Drain Diode TJ = 25C unless otherwise specified) C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 10 A ISM Repetitive, pulse width limited by TJM 40 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 5A, -di/dt = 100A/s 300 ns IRM VR = 100V, VGS = 0V 7.3 TO-247 (IXFH) Outline A P Note 1: Pulse test, t 300s; duty cycle, d 2%. PLUS220SMD (IXFV_S) Outline e Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH10N100P IXFV10N100P IXFV10N100PS Fig. 2. Extended Output Characteristics @ 25C Fig. 1. Output Characteristics @ 25C 10 20 VGS = 15V 10V 9 8 16 7 14 9V 6 ID - Amperes ID - Amperes VGS = 15V 10V 18 5 4 12 10 9V 8 6 3 8V 2 4 8V 1 2 7V 0 0 0 2 4 6 8 10 12 0 14 5 10 15 10 2.8 VGS = 10V 2.6 RDS(on) - Normalized 7 ID - Amperes 30 3.0 VGS = 15V 9V 8 6 8V 5 4 3 2.4 2.2 2.0 I D = 10A 1.8 I D = 5A 1.6 1.4 1.2 1.0 2 7V 0.8 1 0.6 0 0.4 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 11 2.8 10 VGS = 10V 2.6 9 TJ = 125C 2.4 8 2.2 ID - Amperes RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 9 20 VDS - Volts VDS - Volts 2.0 1.8 1.6 1.4 7 6 5 4 3 1.2 2 TJ = 25C 1.0 1 0.8 0 0 2 4 6 8 10 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 12 14 16 18 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFH10N100P IXFV10N100P IXFV10N100PS Fig. 7. Input Admittance Fig. 8. Transconductance 10 14 TJ = - 40C 9 12 8 10 g f s - Siemens ID - Amperes 7 6 5 TJ = 125C 4 25C 3 25C 8 125C 6 4 - 40C 2 2 1 0 0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 1 2 3 4 VGS - Volts 5 6 7 8 9 10 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 30 VDS = 500V 14 I D = 5A 25 I G = 10mA VGS - Volts IS - Amperes 12 20 15 10 10 8 6 TJ = 125C 4 TJ = 25C 5 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 10 VSD - Volts 30 40 50 60 70 80 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Ciss 1,000 Z(th)JC - C / W Capacitance - PicoFarads 20 Coss 100 Crss f = 1 MHz 10 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_10N100P (65)9-24-08