© 2008 IXYS CORPORATION, All rights reserved DS99922(09/08)
VDSS = 1000V
ID25 = 10A
RDS(on) ≤≤
≤≤
≤ 1.4ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C10A
IDM TC= 25°C, pulse width limited by TJM 25 A
IATC= 25°C5A
EAS TC= 25°C 500 mJ
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 15 V/ns
PDTC= 25°C 380 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
FCMounting force (PLUS220) 11..65/2.5..14.6 N/lb.
Weight TO-247 6 g
PLUS 220 types 4 g
G = Gate D = Drain
S = Source TAB = Drain
IXFH10N100P
IXFV10N100P
IXFV10N100PS
Preliminary Technical Information
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0V TJ = 125°C 1.25 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 1.4 Ω
PolarTM Power MOSFET
HiPerFETTM
Features
zInternational standard packages
zFast recovery diode
zAvalanche rated
zLow package inductance
Advantages
zEasy to mount
zSpace savings
zHigh power density
Applications:
zSwitched-mode and resonant-mode
power supplies
zDC-DC Converters
zLaser Drivers
zAC and DC motor drives
zRobotics and servo controls
G
SD (TAB)
PLUS220SMD (IXFV_S)
TO-247 (IXFH)
PLUS220 (IXFV)
GDS
D (TAB)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH10N100P IXFV10N100P
IXFV10N100PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 4.2 6.5 S
Ciss 3030 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 200 pF
Crss 34 pF
RGi Gate input resistance 1.8 Ω
td(on) 38 ns
tr 45 ns
td(off) 47 ns
tf 75 ns
Qg(on) 56 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 19 nC
Qgd 30 nC
RthJC 0.33 °C/W
RthCS (TO-247 & PLUS220) 0.21 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 10 A
ISM Repetitive, pulse width limited by TJM 40 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
IRM 7.3 A
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 5A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG= 3.3Ω (External)
TO-247 (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFH10N100P IXFV10N100P
IXFV10N100PS
Fig. 1. Output Characteristics
@ 25ºC
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14
VDS - V o lts
ID - Am peres
VGS
= 15
V
10
V
7V
9V
8V
Fi g . 2. Exten d ed Ou tp u t C h ar acter i sti cs
@ 25ºC
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25 30
VDS - Volt s
ID - A mpe re s
VGS
= 15V
10V
9V
8V
Fi g . 3. Ou tp u t C h ar acter i sti cs
@ 125ºC
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30
VDS - V olts
ID - Am peres
VGS
= 15V
9V
7V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 5A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
RDS(on) - No rm a liz ed
VGS
= 10V
I D = 10A
I D = 5A
Fig. 5. R
DS(on)
Normalized to I
D
= 5A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
024681012141618
ID - Amperes
RDS(on) - No rm a liz ed
VGS
= 10V
TJ = 125ºC
TJ = 25ºC
Fig. 6. Maxim um Drain Current vs.
Case Temperatu re
0
1
2
3
4
5
6
7
8
9
10
11
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
ID - Am peres
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH10N100P IXFV10N100P
IXFV10N100PS
Fig. 7. Input Adm ittance
0
1
2
3
4
5
6
7
8
9
10
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GS
- Volts
I
D
- Am peres
T
J
= 125ºC
- 40ºC
25ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
012345678910
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
In tri n sic D i o d e
0
5
10
15
20
25
30
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 1020304050607080
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 500V
I
D
= 5A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g. 12. Maximum Tran sien t Th er mal
Impedance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: F_10N100P (65)9-24-08
