GBJ2500 - GBJ2510 SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
* Glass Passivated Die Construction
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* High current capability
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 8.17 grams ( Approximaly )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
SYMBO
L
GBJ
2500 GBJ
2501 GBJ
2502 GBJ
2504 GBJ
2506 GBJ
2508 GBJ
2510 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current Tc = 100 °C IF(AV) 25 A
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms. I2t510 A2S
Maximum Forward Voltage per Diode at IF = 12.5 A VF1.1 V
Maximum DC Reverse Current Ta = 25 °C IR10 μA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 500 μA
Thermal Resistance, Junction to Case RӨJC 0.6 °C/W
Operating Junction Temperature Range TJ - 40 to + 150 °C
Storage Temperature Range TSTG - 40 to + 150 °C
Note : (1) Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
Page 1 of 2 Rev. 04 : November 2, 2006
RATING
IFSM 300 A
RBV25
Dimensions in millimeters
C3 4.9 ± 0.2
3.9 ± 0.2
~
∅ 3.2 ± 0.1
~
11 ± 0.2
17.5 ± 0.5
20 ± 0.3
0.7 ± 0.1
1.0 ± 0.1
2.0 ± 0.2
30 ± 0.3
7.5
±0.2
10
±0.2
+
7.5
±0.2
13.5 ± 0.3
Certificate TH97/10561QM Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( GBJ2500 - GBJ2510 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
FORWARD VOLTAGE, VOLTS
Page 2 of 2 Rev. 04 : November 2, 2006
15
10
5
30
25
100 10
1.0
200
0
300
0
150
100
50
0.1
10
80
0.01
0.01
1.0
0.1
100 140
020 40 60 120
PERCENT OF RATED
REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERE SFORWARD CURRENT , AMPERES
REVERSE CURRENT,
MICROAMPERES
Tj = 25 °C
Pulse Width = 300 μs
SINGLE HALF SINE WAVE
JEDEC METHOD
TJ = 25 °C
Tj = 100 °C
Tj = 25 °C
20
250
10 20 601 2 4 6 40 100
1.2
1.4
1.8
0.4
0.6
0.8
1.0
1.6
with heatsink
Resistive or Inductive load
Certificate TH97/10561QM Certificate TW00/17276EM
