SM6T Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88385 www.vishay.com
03-May-02 1
New Product
Surface Mount TRANSZORB®
T ransient Voltage Suppressors
Breakdown Voltage 6.8 to 220V
Peak Pulse Power 600W
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak pulse power dissipation on PPPM Minimum 600 W
10/1000µs wavefor m(1)(2) (Fig. 1)
Peak pulse current with a 10/1000µs waveform(1) IPPM See Next Table A
Power dissipation on infinite heatsink, TA= 50°C PM(AV) 5.0 W
Peak forward surge current 10ms single half sine-wave IFSM 100 A
uni-directional only(2)
Thermal resistance junction to ambient air(3) RθJA 100 °C/W
Thermal resistance junction to leads RθJL 20 °C/W
Operating junction and storage temperature range TJ, TSTG – 65 to +150 °C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
0.180 (4.57)
0.160 (4.06) 0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AA (SMBJ)
Features
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low inductance
• Excellent clamping capability
• Repetition rate (duty cycle): 0.01%
• Fast response time: theoretically (with no parisitic
inductance) less than 1ps from 0 Volts to V(BR) for
unidirectional and 5ns for bidirectional types
• High temperature soldering: 250°C/10 seconds at
terminals
• Plastic package has Underwriters Laboratory
Flammability Classificaion 94V-0
Mechanical Data
Case: JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003 ounces, 0.093 grams
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/car ton
52 – 750 per 7”plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13”plastic Reel (12mm tape), 32K/carton
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN) 0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
SM6T Series
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88385
203-May-02
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Device Breakdown Voltage Test Standoff Leakage Clamping Voltage Clamping Voltage αT
Marking VBR @ IT(2) Current Voltage Current(3) VC@ IPP VC@ IPP Max
Code IT(V) VRM IRM@VRM 10/1000µs 8/20µs0
-4/OC
Type(1) UNI BI Min Max (mA) (V) (µA) (V) (A) (V) (A)
SM6T6V8A KE7 KE7 6.45 7.14 10 5.80 1000 10.5 57.0 13.4 298 5.7
SM6T7V5A KK7 AK7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1
SM6T10A KT7 AT7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 7.3
SM6T12A KX7 AX7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8
SM6T15A LG7 LG7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4
SM6T18A LM7 BM7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8
SM6T22A LT7 BT7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2
SM6T24A LV7 LV7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4
SM6T27A LX7 BX7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6
SM6T30A ME7 CE7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7
SM6T33A MG7 MG7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59.0 68 9.8
SM6T36A MK7 CK7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9
SM6T39A MM7 CM7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0
SM6T68A NG7 NG7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4
SM6T100A NV7 NV7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6
SM6T150A PK7 PK7 143 158 1.0 128 1.0 207 2.90 265 15 10.8
SM6T200A PR7 PR7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8
SM6T220A PR8 PR8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8
Notes: (1) For bi-directional devices add suffix “CA”.
(2) VBR measured after ITapplied for 300µs square wave pulse.
(3) For bipolar devices with VR=10 Volts or under, the ITlimit is doubled.
SM6T Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88385 www.vishay.com
03-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
0
25
50
75
100
07525 50 100 125 150 175 200
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
TA — Ambient Temperature (°C)
Fig. 2 – Pulse Derating Curve
PPPM — Peak Pulse Power (kW)
Fig. 1 – P eak Pulse P o wer Rating Curve
0.1
1
10
100
0.1µs 1.0µs10µs
td — Pulse Width (sec.)
100µs 1.0ms 10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60HZ
10
200
100
110
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
IFSM — Peak Forward Surge Current (A)
tp — Pulse Duration (sec)
Transient Thermal Impedance (°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001 0.01 0.1 1 10 100 1000
0
50
100
150
IPPM — Peak Pulse Current, % IRSM
Fig. 3 – Pulse W avef orm
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10µsec.
Peak Value
IPPM
Half Value — IPP
IPPM 2
td
10/1000µsec. Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t — Time (ms)
CJ — Junction Capacitance (pF)
Fig. 4 – Typical Junction Capacitance
10
100
1,000
6,000
101 100 200
VWM — Reverse Stand-Off Voltage (V)
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
Uni-Directional
Bi-Directional
