©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
SS9018
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 50 mA
PCCollector Power Dissipation 400 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Voltage IC =100µA, IE =0 30 V
BVCEO Collect or-E mitter Break down Voltage IC =1.0mA, IB =0 15 V
BVEBO E mitter-B ase Break down Voltage IE =100µA, IC =0 5 V
ICBO Collector Cut-off Current VCB =12V, IE =0 50 nA
hFE Emitter Cut-off Current VCE =5V, IC =1.0mA 28 100 198
VCE (sat) Collector-Emitter Saturat ion Voltage IC =10mA, IB =1mA 0.5 V
Cob Output Capacitance VCB =10V, IE =0
f=1MHz 1.3 1.7 pF
fTCurrent Gain Bandwidth Product VCE =5V, IC =5mA 700 1100 MHz
Classification D E F G H I
hFE 28 ~ 45 39 ~ 60 54 ~ 80 72 ~ 108 97 ~ 146 132 ~ 198
SS9018
AM/FM Amplifier, Local Oscillator of
FM/VHF Tuner
• High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
1. Emitter 2. Base 3. Collector
TO-92
1
©2002 Fairchild Semiconductor Corporation
SS9018
Rev. A4, November 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Output Capa c itance
Figure 5. Current Gain Bandwidth Product
012345678910
0
1
2
3
4
5
6
7
8
9
10
IB = 80
µ
A
IB = 70
µ
A
IB = 60
µ
A
IB = 50
µ
A
IB = 40
µ
A
IB = 30
µ
A
IB = 20
µ
A
IB = 10
µ
A
IB = 90µA
IC[mA], COLLECTOR CURRENT
VCE[V], COL LECTO R- EMITTER VOLTAG E
110
10
100
1000
VCE = 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURA TI ON VOLTAGE
IC[mA], COLLECTOR CURRENT
1 10 100
0.1
1
10
f = 1MHz
IE = 0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10
100
1000
VCE = 5V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
SS9018
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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