BCP56 - Fairchild Semiconductor

BCP56 — NPN General-Pu rpose Amplifier

BCP56 Rev. 1.2

February 2015

BCP56

NPN General-Purpose Amplifier

Ordering Information

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number Marking Package Packing Method

BCP56 BCP56 SOT-223 4L Tape and Reel

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 80 V

VCBO Collector-Base Voltage 100 V

VEBO Emitter-Base Voltage 5 V

ICCollector Current - Continuous 1.2 A

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Description

These devices are designed for general-purpose

medium power amplifiers and switches requiring collec-

tor currents to 1 A. Sourced from process 39.

SOT-223

1. Base 2.4. Collector 3. Emitter

BCP56 — NPN General-Pu rpose Amplifier

BCP56 Rev. 1.2 2

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead minimum 6 cm2.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%

Symbol Parameter Max. Unit

Total Power Dissipation 1 W

Derate Above 25°C 8 mW/°C

RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W

Symbol Parameter Conditions Min. Max. Unit

BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 80 V

BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 100 V

BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5 V

ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 100 nA

VCB = 30 V, IE = 0, TJ = 125°C 10 μA

IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 10 μA

hFE DC Current Gain(4)

VCE = 2 V, IC = 5 mA 25

VCE = 2 V, IC = 150 mA 40 250

VCE = 2 V, IC = 500 mA 25

VCE(sat) Collector-Emitter Saturation Voltage(4) IC = 500 mA, IB = 50 mA 0.5 V

VBE(on) Base-Emitter On Voltage(4) IC = 500 mA, VCE = 2 V 1 V

BCP56 — NPN General-Pu rpose Amplifier

BCP56 Rev. 1.2 3

Physical Dimensions

Figure 1. MOLDED PACKAGE, SOT-223, 4-LEAD

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change

in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

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changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I73

Mouser Electronics

Authorized Distributor

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BCP56