DATE Jun-28-'04 CHECKED Jun-28-'04 CHECKED Jun-28-'04 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. SPECIFICATION Device Name : Power MOSFET Type Name : 2SK3886-01MR Spec. No. : MS5F5814 Date : Jun-28-2004 APPROVED DRAWN MS5F5814 1 / 18 H04-004-05 Date Jun-28 2004 Aug.-29 2006 Classification Revision Index a DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Revised Records Content Drawn Checked Checked Approved enactment Revised RDS(on)-tch graph. MS5F5814 a 2 / 18 H04-004-03 1.Scope This specifies Fuji Power MOSFET 2SK3886-01MR 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-220F Outview See to 8/18 page 5.Absolute Maximum Ratings at Tc=25C (unless otherwise specified) Description Symbol Characteristics Unit VDS 120 V VDSX 90 V Continuous Drain Current ID 67 A Pulsed Drain Current IDP 268 A Gate-Source Voltage VGS 30 V IAR 67 A Note *1 EAS 719.1 mJ Note *2 EAR 9.5 mJ Note *3 Maximum Drain-Source dV/dt dVDS/dt 20 kV/s VDS120V Peak Diode Recovery dV/dt dV/dt 5 kV/s Note *4 Maximum Power Dissipation PD Repetitive and Non-repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy 95 W 2.16 VGS=-30V Tc=25C Ta=25C Operating and Storage Tch 150 C Temperature range Tstg -55 to +150 C Isolation Voltage VISO 2 kVrms t=60sec f=60Hz 6.Electrical Characteristics at Tc=25 C (unless otherwise specified) Static Ratings Description Symbol Drain-Source Conditions min. typ. max. Unit 120 - - V 3.0 - 5.0 V - - 25 ID=250A Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance RDS(on) VGS=0V ID=250A VDS=VGS VDS=120V Tch=25 C VGS=0V VDS=96V Tch=125 C VGS=0V A - - 250 - - 100 nA - 24.6 30.0 m VGS= 30V VDS=0V ID=33.5A VGS=10V DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Drain-Source Voltage Remarks MS5F5814 a 3 / 18 H04-004-03 Dynamic Ratings Description Symbol Conditions min. typ. max. Unit VDS=25V 14 28 - S ID=33.5A Forward Transconductance gfs Input Capacitance Ciss VDS=75V - 1880 2820 Output Capacitance Coss VGS=0V - 360 540 30 45 Reverse Transfer f=1MHz Capacitance Crss - td(on) Vcc =48V - 20 30 tr VGS=10V - 35 53 td(off) ID=33.5A - 50 75 Turn-Off Time tf RGS=10 - 23 35 Total Gate Charge QG Vcc =60V - 52 78 Gate-Source Charge QGS ID=67A - 16 24 Gate-Drain Charge QGD VGS=10V - 18 27 min. typ. max. Unit - 1.10 1.50 V - 150 - ns - 0.9 - C min. typ. max. Unit Turn-On Time ns nC Reverse Diode Description Symbol Conditions IF=67A Diode Forward On-Voltage VSD VGS=0V Tch=25 C IF=67A Reverse Recovery Time trr Reverse Recovery VGS=0V -di/dt=100A/s Charge Qrr Tch=25 C 7.Thermal Resistance Description Symbol Channel to Case Rth(ch-c) 1.316 C/W Channel to Ambient Rth(ch-a) 58 C/W Note *1 : Tch150 C, See Fig.1 and Fig.2 Note *2 : Starting Tch=25 C,IAS=27A,L=1.32mH,Vcc=48V,RG=50,See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. See to the 'Avalanche Energy' graph of page 17/18. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Maximum Transient Thermal impedance' graph of page 18/18. Note *4 : IF-ID,-di/dt=50A/s,VccBVDSS,Tch150 C DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. pF MS5F5814 a 4 / 18 H04-004-03 50 DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Fig.1 Test circuit L D.U.T Vcc Fig.2 Operating waveforms +10V VGS -15V IDP BVDSS 0 VDS ID MS5F5814 a 5 / 18 H04-004-03 8.Reliability test items All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104 standards. Test items required without fail Humidification treatment (852C,655%RH,16824hr) Heat treatment of soldering (Solder Dipping,2605C(265Cmax.),101sec,2 times) Test Items 1 Terminal Strength (Tensile) Mechanical test methods This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. 2 Terminal Strength (Bending) 3 Mounting Strength 4 Vibration 5 Shock 6 Solderability 7 Resistance to Soldering Heat Testing methods and Conditions Reference Standard Pull force TO-220,TO-220F : 10N TO-3P,TO-3PF,TO-247 : 25N TO-3PL : 45N T-Pack,K-Pack : 10N Force maintaining duration :305sec Load force TO-220,TO-220F : 5N TO-3P,TO-3PF,TO-247 : 10N TO-3PL : 15N T-Pack,K-Pack : 5N Number of times :2times(90deg./time) Screwing torque value: (M3) TO-220,TO-220F : 4010Ncm TO-3P,TO-3PF,TO-247 : 5010Ncm TO-3PL : 7010Ncm frequency : 100Hz to 2kHz 2 Acceleration : 200m/s Sweeping time : 4min. 48min. for each X,Y&Z directions. 2 Peak amplitude: 15km/s Duration time : 0.5ms 3times for each X,Y&Z directions. Solder temp. : 2355 C Immersion time : 50.5sec Each terminal shall be immersed in the solder bath within 1 to 1.5mm from the body. Solder temp. : 2605 C Immersion time : 101sec Number of times : 1times DWG.NO. Test No. Sampling number EIAJ ED4701/400 method 401 15 EIAJ ED4701/400 method 401 15 (0:1) EIAJ ED4701/400 method 402 15 EIAJ ED4701/400 method 403 15 EIAJ ED4701/400 method 404 15 EIAJ ED4701/300 method 303 15 EIAJ ED4701/300 method 302 15 MS5F5814 Acceptance number a 6 / 18 H04-004-03 Climatic test methods Test No. Items Testing methods and Conditions Reference Sampling Acceptance Standard number number 1 High Temp. Storage Temperature : 150+0/-5C Test duration : 1000hr EIAJ ED4701/200 2 Low Temp. Storage Temperature : -55+5/-0C Test duration : 1000hr method 201 EIAJ ED4701/200 method 202 3 Temperature Humidity Storage 4 Temperature Temperature : 852C Relative humidity : 855% Test duration : 1000hr Temperature : 852C EIAJ ED4701/100 method 103 EIAJ Relative humidity : 855% Bias Voltage : V D S(max) * 0.8 ED4701/100 method 103 Test duration : 1000hr Temperature : 1302C EIAJ Humidity BIAS 5 Unsaturated Pressurized Vapor 6 Temperature Cycle 7 Thermal Shock Relative humidity : 855% Vapor pressure : 230kPa Test duration : 48hr ED4701/100 method 103 High temp.side : 1505 C/30min. Low temp.side : -555 C/30min. EIAJ RT : 5C 35C/5min. Number of cycles : 100cycles Fluid : pure water(running water) High temp.side : 100+0/-5 C Low temp.side : 0+5/-0 C Duration time : HT 5min,LT 5min 22 22 22 22 (0:1) 22 ED4701/100 method 105 22 EIAJ ED4701/300 method 307 22 Endurance test methods Number of cycles : 100cycles 8 Intermittent Operating Life Tc=90degree TchTch(max.) Test duration : 3000 cycle EIAJ ED4701/100 method 106 9 HTRB (Gate-source) Temperature : Tch=150+0/-5C Bias Voltage : +V GS(max) EIAJ ED4701/100 Test duration : 1000hr Temperature : Tch=150+0/-5C method 101 EIAJ Bias Voltage : V D S(max)*1.0 ED4701/100 Test duration : 1000hr method 101 10 HTRB (Drain-Source) 22 (0:1) 22 22 Symbols Failure Criteria Item Lower Limit Upper Limit Breakdown Voltage BVDSS LSL * 1.0 ----Zero gate Voltage Drain-Source Current IDSS ----USL * 2 Gate-Source Leakage Current IGSS ----USL * 2 Gate Threshold Voltage VGS(th) LSL * 0.8 USL * 1.2 Drain-Source on-state Resistance RDS(on) ----USL * 1.2 Forward Transconductance gfs LSL * 0.8 ----Diode forward on-Voltage VSD ----USL * 1.2 Marking Soldering ----With eyes or Microscope and other damages * LSL : Lower Specification Limit * USL : Upper Specification Limit * Before any of electrical characteristics measure, all testing related to the humidity have conducted after drying the package surface for more than an hour at 150C. DWG.NO. Electrical Characteristics Failure Criteria Outvie w This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Test MS5F5814 Unit V A A V S V ----- a 7 / 18 H04-004-03 DWG.NO. MS5F5814 a 8 / 18 H04-004-03 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. 9. Cautions Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. The products described in this Specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment(Terminal devices) Machine tools AV equipment Measurement equipment Personal equipment Industrial robots Electrical home appliances etc. The products described in this Specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment such as a backup system to prevent the equipment from malfunctioning. Backbone network equipment Transportation equipment (automobiles, trains, ships, etc.) Traffic-signal control equipment Gas alarms, leakage gas auto breakers Submarine repeater equipment Burglar alarms, fire alarms, emergency equipment Medical equipment Nuclear control equipment etc. Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited to): Aerospace equipment Aeronautical equipment 10. Warnings The MOSFETs should be used in products within their absolute maximum rating(voltage, current, temperature, etc.). The MOSFETs may be destroyed if used beyond the rating. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous Avalanche capability which can be assumed as abnormal condition .Please note the device may be destructed from the Avalanche over the specified maximum rating. The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc...). Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions. Be careful when handling MOSFETs for ESD damage. (It is an important consideration.) Wh enhandl i n gMOSFETs ,h ol dt hem byt h ec as e( pack age)anddon' tt ou cht h el eadsan dt er mi nal s . It is recommended that any handling of MOSFETs is done on grounded electrically conductive floor and tablemats. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. listed below, first check the system construction and required reliability, and take adequate safety measures MS5F5814 a 9 / 18 H04-004-03 Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. You must design the MOSFETs to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destruction of devices. Consider the possible temperature rise not only for the channel and case, but also for the outer leads. Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation in order to avoid electric shock and burns. The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrangement to prevent the spread of fire. The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive gas(hydrogen sulfide, sulfurous acid gas etc.) Installation Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Solder temperature and duration (through-hole package) Solder temperature 2605 C 35010 C Duration 101 seconds 3.50.5 seconds The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. When flow-soldering, be careful to avoid immersing the package in the solder bath. Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device. Table 1: Recommended tightening torques. Package style TO-220 TO-220F TO-3P TO-3PF TO-247 TO-3PL Screw Tightening torques M3 30 -50 Ncm M3 40 -60 Ncm M3 60 -80 Ncm DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. The MOSFETs should not used in an irradiated environment since they are not radiation-proof. Note flatness : < 30m roughness : <10m Plane off the edges : C<1.0mm MS5F5814 a 10 / 18 H04-004-03 The heat sink should have a flatness within30 m and roughness within 10 m. Also, keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown leading to a critical accident. ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm) We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. Storage The MOSFETs must be stored at a standard temperature of 5 to 35 C and relative humidity of 45 to 75%. If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady. The MOSFETs should not be stored on top of each other, since this may cause excessive external force on the case. presoldered connections to fail during later processing. The MOSFETs should be stored in antistatic containers or shipping bags. 11.Appendix These products do not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ). Th es epr odu c t sdon otc on t ai nCl as s I ODSan dCl as sI I ODSof` Cl eanAi rAc t ofUS' . If you have any questions about any part of this Specification, please contact Fuji Electric or its sales agent before using the product. Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. The application examples described in this specification are merely typical uses of Fuji Electric products. This specification does not confer any industrial property rights or other rights, nor constitute a license for such rights. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause MS5F5814 a 11 / 18 H04-004-03 0 0 25 1 50 120 2 DWG.NO. ID [A] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. PD [W] Allowable Power Dissipation PD=f(Tc) 120 100 80 60 40 20 0 75 100 3 4 VDS [V] 125 40 20 5 6 150 Tc [ C] Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 140 20V 10V 100 8.0V 80 7.5V 60 7.0V 6.5V 6.0V VGS=5.5V 0 7 MS5F5814 a 12 / 18 H04-004-03 0 0.1 1 2 3 4 5 VGS[V] DWG.NO. gfs [S] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. ID[A] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 100 10 1 0.1 6 1 7 10 8 9 10 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C 100 10 1 0.1 100 ID [A] MS5F5814 a 13 / 18 H04-004-03 RDS(on) [ ] VGS=5.5V 6.0V 0 -50 -25 6.5V 20 0 7.0V 40 25 50 Tch [ C] DWG.NO. RDS(on) [ ] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. 0.20 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C 7.5V 0.16 0.12 0.08 0.04 10V 20V 0.00 60 80 75 100 100 125 120 ID [A] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=33.5A,VGS=10V 0.08 0.07 0.06 0.05 0.04 max. 0.03 typ. 0.02 0.01 0.00 150 MS5F5814 a 14 / 18 H04-004-03 VGS(th) [V] 5.0 3.0 -50 0 -25 10 0 20 25 30 40 DWG.NO. VGS [V] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 6.5 6.0 5.5 max. 4.5 4.0 3.5 min. 2.5 2.0 1.5 1.0 0.5 0.0 50 75 Tch [ C] 10 50 60 100 70 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=67A,Tch=25 C 14 12 Vcc=60V 8 6 4 2 0 80 MS5F5814 90 Qg [nC] a 15 / 18 H04-004-03 10 0 0.1 0.00 0.25 10 0.50 0.75 DWG.NO. IF [A] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. C [pF] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 3 Ciss Coss 10 2 Crss 10 1 1 10 1.00 1.25 2 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C 100 10 1 1.50 VSD [V] MS5F5814 a 16 / 18 H04-004-03 10 1 10 500 300 0 -1 10 0 25 50 DWG.NO. EAV [mJ] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. t [ns] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 3 tf 10 td(off) 10 2 td(on) tr 10 0 10 1 10 75 100 2 ID [A] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=67A 800 IAS=27A 700 600 IAS=41A 400 IAS=67A 200 100 0 125 150 starting Tch [ C] MS5F5814 a 17 / 18 H04-004-03 Avalanche Current I AV [A] 3 10 2 10 1 10 0 10 10 10 1 10 0 10 -1 10 -2 10 -3 -8 10 -6 10 -7 10 -5 10 -6 10 -4 10 DWG.NO. Zth(ch-c) [ C/W] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=48V Single Pulse -1 -5 10 10 -3 -4 10 -2 10 -3 10 -1 MS5F5814 10 -2 tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 t [sec] a 18 / 18 H04-004-03