TTRF730,731 PO o/MOS [FIETT ps4be2,01 FIELD EFFECT POWER TRANSISTOR 400, 350 VOLTS RpS(ON) = 1.02 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) transfer characteristics makes it well suited for many linear = Ra rotes2f ay fo St applications such as audio amplifiers and servo motors. E 2 min| E Features ae ft ete 22 i: TEMPERATURE Polysilicon gate Improved stability and reliability usia6el ae POINT No secondary breakdown Excellent ruggedness MATS | \ ay Ultra-fast switching Independent of temperature A i oe ie sorto.a2 Voltage controlled High transconductance ae . 1""" @ Low input capacitance Reduced drive requirement TERMS et ff e Excellent thermal stability Ease of paralleling Sane | Plas Te BER a UNIT TYPE |TERM.I[TERM.2] TERM.3 TAB POWER MOS FET(T0-220-ABL GATE }QRAIN]SOURCE| DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF730/D84DQ2 IRF731/D84DQ1 UNITS Drain-Source Voltage Voss 400 350 Volts Drain-Gate Voltage, Res = 1M Voar 400 350 Volts Continuous Drain Current @ To = 25C Ip .5 5.5 A @ To = 100C 3.5 3.5 A Pulsed Drain Current lpm 22 22 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 W/C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Raa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 213electricai characteristics (Tc = 25C) (unless otherwise specified) { CHARACTERISTIC | SYMBOL {| MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF730/D84DQ2 | BVpss 400 _ Volts (Vgs = OV, Ip = 250 wA) IRF731/D84DQ1 350 _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Vag = OV, Tc = 25C) _ _ 250 uA (Vos = Max Rating, x 0.8, Veg = OV, To = 125C) _ 1000 Gate-Source Leakage Current on characteristics* Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts (Vps = Vas; Ip = 250 uA) On-State Drain Current (Vag = 10V, Vpg = 10V) ID(oNy | 55 7 - A Static Drain-Source On-State Resistance (Vas = 10V, Ip = 3A) Rps(ON) _ 0.8 1.0 Ohms Forward Transconductance (Vps = 10V, Ip = 3A) Ofs 2.1 2.5 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss ~ 650 800 pF Output Capacitance Vps = 25V Coss _ 100 300 pF Reverse Transfer Capacitance f= 1 MHz Cres _ 15 80 pF switching characteristics Turn-on Delay Time Vps = 175V ta(on) _ 15 ns Rise Time Ip = 3A, Veg = 15V tr ~ 20 _ ns Turn-off Delay Time Reen = 509, Rag = 12.50 | tavofty _ 30 _ ns Fall Time (Res (Equiv) = 102) tt ~_ 20 ns source-drain diode ratings and characteristics Continuous Source Current Is ~ _ .5 A Pulsed Source Current Ism _ _ 22 A Diode Forward Voltage (To = 25C, Vag = OV, Is = 5.5A) Vsp ~ 10 16 Volts Reverse Recovery Time ter = 360 _ ns (lg = 5.5A, dig/dt = 100A/usec, To = 125C) Qrr _ 4.0 _ uC Pulse Test: Pulse width <= 300 us, duty cycle = 2% 100 80 60 CONDITIONS: 40 Rg(ON) CONDITIONS: Ip * 3.0 A, Vgg = 10V Vas(tH) CONDITIONS: Ip = 250uA, Vos = Vag gq 20 a 8 # 10 z i 3 i = 6 g ke z 4 = @ E & 8 > 2 > 3 a 2 < 10 ITED BYR 3 06 & o a 0.4 T.= 25C nD 1 2 4 6 810 20 40 6080100 200 400 600 1000 40 o 40 80 120 160 Vpg ORAINSOURCE VOLTAGE (VOLTS) T,, JUNCTION TEMPERATURE (C) MAXIMUM SAFE OPERATING AREA TYPICAL NORMALIZED Rogsioy, AND Vasity) VS. TEMP. 214