SFH 485 P
GaAlAs-IR-Lumineszenzdiode (880 nm)
GaAlAs Infrared Emitter (880 nm)
2001-02-22 1
Wesentliche Merkmale
• GaAlAs-LED mit sehr hohem Wirkungsgrad
• Hohe Zuverlässigkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• Gegurtet lieferbar (im Ammo-Pack)
• Gruppiert lieferbar
• Gehäusegleich mit SFH 217
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• Rauchmelder (UL-Freigabe)
• Sensorik
• Diskrete Lichtschranken
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 485 P Q62703-Q516 5-mm-LED-Gehäuse, plan, klares violettes
Epoxy-Gießharz, Lötspieße im 2.54-mm-Raster (1/10’’),
Anodenkennzeichnung: kürzerer Anschluß
5 mm LED package (T 1 3/4), plane violet-colored
transparent epoxy resin, solder tabs lead spacing
2.54 mm (1/10’’), anode marking: short lead.
Features
•Very highly efficient GaAlAs-LED
•High reliability
•Spectral match with silicon photodetectors
•Available on tape and reel (in Ammopack)
•Available in bins
•Same package as SFH 217
Applications
•IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
•Remote control for steady and v arying intensi ty
•Smoke detectors (UL-approval)
•Sensor technology
•Discrete interrupters
2001-02-22 2
SFH 485 P
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR5V
Durchlaßstrom
Forward current IF100 mA
Stoßstrom, τ ≤ 10 µs
Surge current IFSM 2.5 A
Verlustleistung
Power dissipation Ptot 200 mW
Wärmewiderstand, freie Beinchenlänge
max. 10 mm
Thermal resistance, lead length between
package bottom and PC-board max. 10 mm
RthJA 375 K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA
λpeak 880 nm
Spektrale Bandbreite bei 50% von Imax
IF = 100 mA
Spectral bandwidth at 50% of Imax
∆λ 80 nm
Abstrahlwinkel
Half angle ϕ± 40 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area L×B
L×W0.3 ×0.3 mm
Abstand Chipoberfläche bi s Gehäusevorderseite
Distance chip front to case surface H0.5 …1mm
SFH 485 P
2001-02-22 3
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 50 mA, RL = 50 Ω
Switching tim es, Ie from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf0.6/0.5 µs
Kapazität, VR = 0 V, f = 1 MHz
Capacitance Co15 pF
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF1.5 (< 1.8)
3.0 (< 3.8) V
Sperrstrom,
Reverse current
VR = 5 V
IR0.01 (≤ 1) µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe25 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 2mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.25 nm/ K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2001-02-22 4
SFH 485 P
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter Symbol Werte
Values Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms Ie> 3.15 mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µsIe typ.48 mW/sr
SFH 485 P
2001-02-22 5
Relati ve Sp ectral Emission
Irel = f (λ)
Forward Cu rrent
IF = f (VF), Single pu lse , tp = 20 µs
Radiation Characteristics Ιrel = f (ϕ)
0
750
Ιrel
OHR00877
800 850 900 950 nm 1000
20
40
60
80
%
100
λ
10
OHR00881
F
V
-3
-2
10
-1
10
0
10
1
10
0123456V8
A
Ι
F
OHR01893
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
ϕ
Radiant Intensity
Single pulse , tp = 20 µs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C,duty
cycle D = parameter
Ie
Ie 100 mA = f (IF)
10
OHR00878
Ιe
F
Ι
-3
-2
10
-1
10
0
10
1
10
2
10
0
10 10 110 210 4
mA
e
Ι
(100mA)
3
10
10
Ι
F
OHR00886
1
2
10
3
10
4
10
mA
-5
10 s
=D
F
Ι
T
DC
0.005=
D
p
t
T
t
p
p
t
0.5
0.2
0.1
0.01
0.02
0.05
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Max. Permissible Forward Current
IF = f (TA)
Forward Current vs. Lead Le ngt h
Between the Package Bottom and
the PC-Boar d IF = f (I), TA = 25 °C
T
OHR00880
0
F
Ι
0 20 40 60 80 100˚C
mA
25
50
75
100
125
OHR00949
F
Ι
00 5 10 15 20 25 mm 30
20
40
60
80
100
mA
120
2001-02-22 6
SFH 485 P
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
5.9 (0.232)
5.5 (0.217)
ø5.1 (0.201)
ø4.8 (0.189)
2.54 (0.100)
spacing
3.85 (0.152)
3.35 (0.132)
5.0 (0.197)
4.2 (0.165)
1.0 (0.039)
0.5 (0.020)
Chip position
GEXY6306
Cathode
0.6 (0.024)
0.4 (0.016)
0.8 (0.031)
0.4 (0.016)
29 (1.142)
27 (1.063)
1.8 (0.071)
1.2 (0.047)
Area not flat
0.6 (0.024)
0.4 (0.016)
