BSS138W
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv/dt rated
• Pb-free lead-plating; RoHS compliant
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.28 A
TA=70 °C 0.22
Pulsed drain current ID,pulse TA=25 °C 1.12
Reverse diode dv/dtdv/dt
ID=0.28 A, VDS=48 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD class 0 (<250V)
(JESD22-A114-HBM)
Power dissipation Ptot TA=25 °C 0.50 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
VDS 60 V
RDS(on),max 3.5 Ω
ID 0.28 A
Product Summary
PG-SOT-323
Type Package Tape and Reel Marking
BSS138W PG-SOT-323 H
6327: 3000
/
SWs
BSS138W PG-SOT-323 H6433: 10000
Rev. 2.43 page 1 2011-07-12
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
SWs
BSS138W
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint RthJA - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS= 0 V, ID=250 µA 60 - - V
Gate threshold voltage VGS(th) VGS=V DS, ID=26 µA 0.6 1.0 1.4
Drain-source leakage current ID (off)
VDS=60 V,
VGS=0 V, Tj=25 °C - - 0.1 µA
VDS=60 V,
VGS=0 V, Tj=150 °C --5
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 10 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=0.03 A - 3 4.0 Ω
VGS=4.5 V, ID=0.16 A - 3.2 6
VGS=10 V, ID=0.2 A - 2.1 3.5
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.22 A 0.12 0.23 - S
Values
Rev. 2.43 page 2 2011-07-12
BSS138W
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss -3243pF
Output capacitance Coss - 7.2 10
Reverse transfer capacitance Crss - 2.8 4.2
Turn-on delay time td(on) - 2.2 3.3 ns
Rise time tr- 3.0 4.5
Turn-off delay time td(off) - 6.7 10
Fall time tf- 8.2 12
Gate Charge Characteristics
Gate to source charge Qgs - 0.10 0.13 nC
Gate to drain charge Qgd - 0.3 0.4
Gate charge total Qg- 1.0 1.5
Gate plateau voltage Vplateau - 3.2 - V
Reverse Diode
Diode continous forward current IS- - 0.28 A
Diode pulse current IS,pulse - - 1.12
Diode forward voltage VSD
VGS=0 V, IF=0.28 A,
Tj=25 °C - 0.85 1.2 V
Reverse recovery time trr - 8.3 12.4 ns
Reverse recovery charge Qrr - 3.3 5 nC
VR=30 V, IF=0.28 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=0.2 A, RG=6 Ω
VDD=48 V, ID=0.2 A,
VGS=0 to 10 V
Rev. 2.43 page 3 2011-07-12
BSS138W
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
100 ms
10 µs
100 µs
1 ms
10 ms
DC
101
100
10-1
10-2
10-3
1 10 100
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
102
101
100
10-1
10-2
10-3
10-4
10-5
10-6
103
102
101
100
10-1
10-2
tp [s]
ZthJA [K/W]
0
0.1
0.2
0.3
0.4
0.5
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.05
0.1
0.15
0.2
0.25
0.3
0 40 80 120 160
TA [°C]
ID [A]
Rev. 2.43 page 4 2011-07-12
BSS138W
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
2.9 V 3.2 V 3.5 V 4 V
4.5 V
5 V
7 V
10 V
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5
ID [A]
RDS(on) [Ω]
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
VGS [V]
ID [A]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00 0.10 0.20 0.30 0.40
ID [A]
gfs [S]
V 2.9
V 3.2
V 3.5
V 4
V 4.5
V 5
V 7
V 10
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
VDS [V]
ID [A]
Rev. 2.43 page 5 2011-07-12
BSS138W
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.2 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=26 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
%98
0
2
4
6
8
-60 -20 20 60 100 140
Tj [°C]
RDS(on) [Ω]
typ
%98
%2
0
0.4
0.8
1.2
1.6
2
-60 -20 20 60 100 140
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
102
101
100
0102030
VDS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
100
10-1
10-2
10-3
0 0.4 0.8 1.2 1.6 2
VSD [V]
IF [A]
Rev. 2.43 page 6 2011-07-12
BSS138W
13 Typ. gate charge 14 Drain-source breakdown voltage
VGS=f(Qgate); ID=0.2 A pulsed VBR(DSS)=f(Tj); ID=250 µA
parameter: VDD
50
55
60
65
70
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
12 V
30 V
48 V
0
2
4
6
8
10
12
0 0.2 0.4 0.6 0.8 1
Qgate [nC]
VGS [V]
Rev. 2.43 page 7 2011-07-12
BSS138W
Package Outline:
Footprint: Packaging:
Rev. 2.43 page 8 2011-07-12
Rev. 2.43 page 9 2011-07-12
Published by
Infineon Tec hnologie s AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rig hts Rese rved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
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BSS138W
