1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC337 BC338 Unit
CollectorEmitter Voltage VCEO 45 25 Vdc
CollectorBase Voltage VCBO 50 30 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC800 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mA, IB = 0) BC337
BC338
V(BR)CEO 45
25
Vdc
CollectorEmitter Breakdown Voltage
(IC = 100 µA, IE = 0) BC337
BC338
V(BR)CES 50
30
Vdc
EmitterBase Breakdown Voltage
(IE = 10
m
A, IC = 0) V(BR)EBO 5.0 Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0) BC337
(VCB = 20 V, IE = 0) BC338
ICBO
100
100
nAdc
Collector Cutoff Current
(VCE = 45 V, VBE = 0) BC337
(VCE = 25 V, VBE = 0) BC338
ICES
100
100
nAdc
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0) IEBO 100 nAdc
Order this document
by BC337/D
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SEMICONDUCTOR TECHNICAL DATA
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
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
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2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V) BC337/BC338
BC337–16/BC338–16
BC337–25/BC338–25
BC337–40/BC338–40
(IC = 300 mA, VCE = 1.0 V)
hFE 100
100
160
250
60
630
250
400
630
Base–Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V) VBE(on) 1.2 Vdc
CollectorEmitter Saturation V oltage
(IC = 500 mA, IB = 50 mA) VCE(sat) 0.7 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz) Cob 15 pF
CurrentGain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT 210 MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
θ
JC(t) = (t)
θ
JC
θ
JC = 100
°
C/W MAX
θ
JA(t) = r(t)
θ
JA
θ
JA = 375
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
t1t2
P(pk)
DUTY CYCLE, D = t1/t2
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms1.0 s TJ = 135
°
C
TA = 25
°
C
TC = 25
°
C
dc
dc
(APPLIES BELOW RATED VCEO)
1000
10 1001.0 3.0 10 30
VCE, COLLECTOR–EMITTER VOLTAGE
Figure 2. Active Region — Safe Operating Area
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
100
1000
10 10000.1 10 100
100
1.0
TJ = 135
°
C
100
µ
sVCE = 1 V
TJ = 25
°
C
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3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
100
10
1
VR, REVERSE VOLTAGE (VOL TS)
Figure 6. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
0.1 11 10 100 1000
–2
–1
0
VCE, COLLECTOR–EMITTER VOLTAGE (VOL TS
)
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)
°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
1.0
0.8
0.6
0.4
0.2
01 10 1000100
10 100
TJ = 25
°
C
IC = 10 mA
TA = 25
°
CVBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
VCE(sat) @ IC/IB = 10
θ
VC for VCE(sat)
θ
VB for VBE Cob
Cib
100 mA 300 mA 500 mA
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4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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BC337/D
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